HVDC — High-Voltage Direct Current
GaN-on-Si and SiC wide-bandgap semiconductors are revolutionizing power electronics for HVDC transmission, EV 800V platforms, and renewable energy systems.
Übersicht
High-Voltage Direct Current (HVDC) transmission systems and electric vehicle 800V platforms are driving an unprecedented demand surge for wide-bandgap (WBG) semiconductor materials — specifically silicon carbide (SiC) and gallium nitride (GaN). SiC MOSFETs have become the dominant technology for power conversion above 650V, replacing silicon IGBTs with superior efficiency, higher switching frequencies, and better thermal performance. GaN HEMTs dominate the medium-voltage, high-frequency space with unmatched efficiency and power density.
The global SiC substrate market is growing at a CAGR exceeding 30%, driven by EV adoption (both on-board chargers and traction inverters), renewable energy infrastructure (solar inverters, wind turbine converters), and industrial power supplies. The industry is in the midst of a critical transition from 6-inch (150mm) to 8-inch (200mm) SiC wafers, which promises a 1.8× increase in usable die per wafer and significant cost reduction. GINECHIP supports this transition with both 150mm and 200mm SiC substrate supply.
Key Technology Features
SiC MOSFET Technology
4H-SiC is the dominant polytype for power devices, offering a wide bandgap (3.26 eV), high critical electric field (2.8 MV/cm), and excellent thermal conductivity (4.9 W/cm·K). These properties enable devices with breakdown voltages exceeding 1.7 kV and operating temperatures above 200°C.
GaN-on-Si HEMT Technology
GaN HEMTs grown on silicon substrates offer exceptional high-frequency performance with low on-resistance and fast switching. The lateral device structure enables monolithic integration of multiple power devices and gate drivers on a single chip, reducing system complexity and cost.
GaN-on-SiC for RF Power
GaN-on-SiC combines GaN's high electron mobility with SiC's superior thermal conductivity, making it the ideal platform for high-power RF applications including 5G base stations, radar systems, and satellite communications.
FZ High-Resistivity Silicon
Float-zone (FZ) silicon with resistivity >10,000 Ω·cm provides the ideal substrate for GaN RF HEMT epitaxy, minimizing substrate losses at microwave frequencies. GINECHIP supplies FZ wafers in diameters from 100mm to 200mm.
GINECHIP Solutions
N-type and semi-insulating 4H-SiC and 6H-SiC substrates in 150mm and 200mm diameters, with micropipe density <1/cm² and resistivity controlled to your specification.
GaN-on-silicon epitaxial wafers for power HEMT fabrication, with precisely controlled AlGaN barrier layers, 2DEG carrier concentration, and buffer layers for high-voltage operation.
GaN-on-SiC epitaxial wafers for RF power applications, combining the high-frequency performance of GaN with the thermal management advantages of SiC substrates.
Float-zone silicon wafers with resistivity >10,000 Ω·cm for GaN RF HEMT epitaxy and other high-frequency applications requiring low substrate losses.
Target Applications
SiC and GaN power devices are used in electric vehicle traction inverters and on-board chargers, HVDC transmission systems, solar and wind power inverters, industrial motor drives, data center power supplies, and 5G base station power amplifiers. The technology is also expanding into aerospace, defense, and medical imaging applications where high voltage, high frequency, and high reliability are required.
Power Your WBG Devices
From SiC and GaN-on-Si to GaN-on-SiC and FZ high-resistivity silicon, GINECHIP is your trusted source for wide-bandgap semiconductor substrates.