Verbindungshalbleiter
Jenseits von Silizium — GaAs, GaN, SiC, InP für HF, Leistungselektronik, Photonik.
Übersicht
Verbindungshalbleiter ermöglichen Leistungen, die Silizium allein nicht erreichen kann.
Von <strong>SI-GaAs</strong> über <strong>4H-SiC</strong> bis <strong>InP</strong>.
Materialkatalog
Galliumarsenid (GaAs)
Das Arbeitstier der HF- und Mikrowellenelektronik. Direkte Bandlücke von 1,42 eV.
- SI-GaAs for RF switches, LNAs, power amplifiers (mobile, WiFi, SATCOM)
- N-type and P-type for optoelectronic devices (VCSELs, photodetectors)
- Available in 2″–6″ diameters, SSP and DSP
- Epi-ready with < 3 Å RMS surface roughness
Galliumnitrid (GaN)
Halbleiter mit großer Bandlücke (3,4 eV) für Hochleistungs-, Hochfrequenz- und Hochtemperaturbetrieb.
- GaN-on-Si: Cost-effective for power HEMTs up to 650V
- GaN-on-SiC: Superior thermal for RF HEMTs (5G base stations, radar, EW)
- GaN-on-Sapphire: Blue/green/UV LED epitaxy
- Free-standing GaN: Lowest defect density for laser diodes
Siliziumkarbid (SiC)
4H-SiC- und 6H-SiC-Polytypen mit Wärmeleitfähigkeit 490 W/m·K.
- 4H-SiC: MOSFETs, JBS/MPS diodes (600V–3.3kV)
- Semi-insulating 4H-SiC for GaN HEMT epi on SiC
- 6H-SiC: Optoelectronics, UV photodiodes
- N-type and SI available, 100mm and 150mm diameters
Indiumphosphid (InP)
Hohe Elektronengeschwindigkeit und direkte Bandlücke bei 1,34 eV.
- N-type and Fe-doped SI substrates
- 2″–4″ diameters, epi-ready polish
- DFB/FP lasers, PIN/APD photodetectors, EO modulators
- HBT and HEMT structures for >100 GHz operation
Saphir (Al₂O₃)
Hexagonale Kristallstruktur, transparent von UV bis mittlerem IR.
- C-plane (0001) for LED epi; R-plane for SOS
- 2″–8″ diameters, SSP and DSP
- Patterned sapphire substrate (PSS) for improved LED extraction
- High thermal stability up to 1800°C
Aluminiumnitrid (AlN)
Ultra-breite Bandlücke (6,2 eV), Wärmeleitfähigkeit ~320 W/m·K.
- Single-crystal AlN substrates, 1″–2″ diameters
- Native substrate for AlGaN-based deep-UV LEDs (UVC disinfection)
- Polycrystalline AlN for thermal management applications
- SAW-grade AlN films on Si and sapphire
Technische Spezifikationen
| Parameter | Verfügbarer Bereich |
|---|---|
| Materials | GaAs, GaN-on-Si, GaN-on-SiC, InP, SiC (4H-SiC, 6H-SiC), Sapphire, AlN, GaSb, InAs, InSb |
| Diameter | 50mm (2″), 76mm (3″), 100mm (4″), 150mm (6″), 200mm (8″) |
| Orientation | 〈100〉, 〈111〉, C-plane, R-plane, A-plane, M-plane (material-dependent) |
| Dopant / Type | Semi-Insulating (SI), N-type (Si-doped), P-type (Zn/Mg-doped), UID (unintentionally doped) |
| Thickness | 350μm–1000μm (custom thinning to 100μm available) |
| Surface Polish | SSP, DSP, Epi-Ready (RMS < 0.3nm for GaAs, < 0.5nm for SiC) |
| Resistivity | SI GaAs: > 10⁷ Ω·cm; N-type GaAs: 10⁻³–10⁻¹ Ω·cm; SI SiC: > 10⁵ Ω·cm |
| Micropipe Density (SiC) | < 1/cm² for high-grade 4H-SiC substrates (MPD down to 0.1/cm²) |
| EPD | GaAs: < 5×10³/cm²; InP: < 5×10⁴/cm²; SiC: < 5×10³/cm² |
| TTV / Bow / Warp | As low as < 5μm TTV, < 15μm Bow, < 20μm Warp |
| Packaging | Single-wafer cassettes, vacuum-sealed, Class 1 cleanroom packaging |
Anwendungsmatrix
| Anwendung | Empfohlenes Substrat | Schlüsseleigenschaft |
|---|---|---|
| Mobile RF Front-End | SI-GaAs | High electron mobility, SI resistivity |
| 5G Base Station PA | GaN-on-SiC | High power density, thermal management |
| Electric Vehicle Inverter | 4H-SiC | High breakdown voltage, low Rds(on) |
| 100G/400G Optical Transceiver | InP (SI) | Direct bandgap, high carrier velocity |
| Blue/Green LED | GaN-on-Sapphire | Lattice match, cost-effective, transparent |
| UVC LED (265nm) | AlN | UV-transparent, lattice-matched to AlGaN |
| mmWave Radar (77GHz) | SI-GaAs or InP | High-frequency gain, low noise figure |
| Radiation-Hard Electronics | 4H-SiC or GaN | Wide bandgap, radiation tolerance |
Qualität & Lieferkette
Alle Substrate durchlaufen strenge Eingangsqualitätsprüfung. Vollständige Rückverfolgbarkeit in ISO 9001:2015 Lieferkette.
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