HF- & Leistungsbauelemente — GaAs, GaN, SiC Substrate | GINECHIP

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Übersicht

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H 2Rf Tech

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Substrates: Semi-insulating GaAsDiameters: 100mm, 150mmPAE: 40–55% for PAsFrequency: 600MHz–6GHz (sub-7)EPD < 5×10³/cm²Epi-ready or patterned

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Substrate: GaN-on-SiC (4H, 6H)Ft/Fmax: 30/80+ GHzPower density: 5–10 W/mmPAE: 50–65% (Doherty PA)Voltage: 28V, 48V railsDiameters: 100mm, 150mm

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Substrate: HR-SOI (> 1kΩ·cm)R₀n·C₀ff < 200 fsHarmonics: < −80 dBm (2nd/3rd)Device layer: 50–200nmDiameters: 200mm, 300mmTrap-rich interface option

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Substrate: HR-Si (111)AlGaN/GaN HEMT epiFrequency: DC–6 GHzDiameters: 150mm, 200mmBuffer: AlN/AlGaN transitionLower cost vs SiC

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Substrates: HR-Si, glassInductors: Q > 40 @ 2GHzCapacitors: 0.1–100pF, ±2%MIM: Si₃N₄ or Al₂O₃ dielectricResistors: NiCr, TaN thin-filmPassivation: SiN/BCB

H 2Power Tech

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Substrate: 4H-SiC (N-type)Voltage: 650V–3.3kVRDS(on): < 15 mΩ·cm² (1200V)Micropipe density < 0.5/cm²Diameters: 100mm, 150mmEpi-ready surface finish

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Substrate: Si (111) 200mmVoltage: 100V–650VRDS(on): < 50 mΩ @ 650VGate: p-GaN enhancement modeSwitching: > 1 MHz capabilityCascode and e-mode options

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Substrate: FZ-Si (N-type)Voltage: 600V–6.5kV (IGBT)FZ oxygen: < 0.2 ppmaDiameters: 150mm, 200mmCustom resistivity availableNeutron transmutation doping

H 2Comparison

Col Param	Col Ga As	Col Ga NOn Si C	Col Rf Soi	Col 4h Si C
Row Bandgap	1.42	3.39	1.12	3.26
Row Crit Field	0.4	3.3	0.3	2.8
Row Mobility	8,500	2,000 (2DEG)	1,400	1,000
Row 2density	N/A	~1×10¹³	N/A	N/A
Row Thermal	0.55	4.9 (SiC)	1.5	4.9
Row Resistivity	>10⁷	>10⁵ (SiC)	>1,000	0.015–0.028
Row Max Freq	100+ GHz	100+ GHz	~6 GHz	N/A (power)
Row Target App	PA, Switch	mmWave PA	Switch, Tuner	MOSFET, Diode

Table Note

H 2Applications

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H 2Epi Quality

Epitaxial layers are characterized by photoluminescence mapping, X-ray diffraction rocking curve analysis, and surface defect density measurement. We guarantee epi-layer uniformity within 2% across the entire wafer, with RMS surface roughness below 0.2nm.

H 2Supply Chain

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