Dünnschichtabscheidung
PVD-, CVD-, ALD-Prozesse für Oxid-, Nitrid-, Metallschichten auf 200mm/300mm Wafern.
Übersicht
Dünnschichtabscheidung ist die Grundlage der Halbleiterfertigung.
PVD, CVD, ALD, ECD. ISO-Klasse-5-Reinraum. Schichtdickenkontrolle < 1 nm.
Abscheidungstechnologien
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Heading Film Mat
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Heading Quality Metrics
| Th Param | Th Target | Th Method |
|---|---|---|
| Qr 1Param | Qr 1Target | Qr 1Method |
| Qr 2Param | Qr 2Target | Qr 2Method |
| Qr 3Param | Qr 3Target | Qr 3Method |
| Qr 4Param | Qr 4Target | Qr 4Method |
| Qr 5Param | Qr 5Target | Qr 5Method |
| Qr 6Param | Qr 6Target | Qr 6Method |
| Qr 7Param | Qr 7Target | Qr 7Method |
| Qr 8Param | Qr 8Target | Qr 8Method |
Typische Anwendungen
Poly-Si, SiO₂, Si₃N₄ für MEMS-Strukturen.
AR-, HR-Beschichtungen. ITO. DBR-Spiegel.
Al, Ti/TiN, Cu-Saat, Ta/TaN, Ni/Au.
Passivierung: Si₃N₄, Parylen, ALD Al₂O₃.
AlN, ZnO, PZT für Piezo-Anwendungen.
NiCr, TaN, Pt Widerstände und Heizer.
Heading Multi Layer
Our multi-layer deposition capability enables complex thin-film stacks with precise thickness control. Each layer is deposited sequentially with in-situ monitoring, ensuring interlayer adhesion and interface quality.
Heading Sub Compat
Our reclaim processes support silicon wafers of all common dopant types, orientations, and diameters. We also offer reclaim for SOI, glass, and compound semiconductor substrates with dedicated process chemistries for each material system.
Qualitätssicherung
Schichtspannungskontrolle < 50 MPa. Brechungsindextoleranz ±0,005.
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