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Übersicht
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Technische Spezifikationen
| Parameter | Verfügbarer Bereich |
|---|---|
| Diameter | 2″ (50.8mm), 3″ (76.2mm), 4″ (100mm) |
| Dopant Type | N-type S-doped, N-type Sn-doped, SI Fe-doped, P-type Zn-doped |
| Resistivity | N-type: 10⁻³–10⁻¹ Ω·cm; SI Fe-doped: > 10⁷ Ω·cm |
| Crystal Orientation | (100), (111)A, (111)B, off-cut 2° or 3° toward (110) |
| Thickness | 350μm, 500μm, 625μm standard (custom on request) |
| Surface Polish | SSP, DSP, Epi-Ready — RMS < 2Å (AFM 5×5μm) |
| EPD (Etch Pit Density) | < 5×10⁴/cm² (prime); < 5×10³/cm² (advanced grade) |
| TTV / Bow / Warp | TTV < 5μm, Bow < 10μm, Warp < 15μm |
| Electron Mobility (μₑ) | 5,400 cm²/V·s (N-type InP at 300K) |
| Bandgap | 1.344 eV (direct, zincblende structure) |
| Thermal Conductivity | 68 W/m·K at 300K |
| Growth Methods | VGF (Vertical Gradient Freeze), LEC (Liquid-Encapsulated Czochralski) |
| Backside Treatment | Etched, polished, or laser-marked per customer specification |
| Laser Mark | SEMI M12/M13 compliant: soft-mark on front or back side |
| Flat Configuration | Per SEMI M1: EJ or US standard flat per diameter |
| Particle Count @ 0.3μm | ≤ 10 particles (laser surface scan) |
| Packaging | Vacuum-sealed, single-wafer shippers, Class 100 cleanroom |
| Compliance | SEMI M1–M13, RoHS, REACH |
Anwendungen
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Qualität & Zertifizierung
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