Compound Semiconductors
Beyond silicon — GaAs, GaN, SiC, InP, and specialty III-V substrates for RF, power electronics, photonics, and infrared sensing.
Overview
Compound semiconductors enable device performance that silicon alone cannot achieve — higher electron mobility, wider bandgaps, direct bandgap emission, and superior thermal conductivity. At GINECHIP, we supply a comprehensive range of <strong>III-V, II-VI, and wide-bandgap semiconductor substrates</strong> to foundries, device manufacturers, and research laboratories worldwide.
From <strong>semi-insulating GaAs</strong> for RF power amplifiers and low-noise front-ends, to <strong>4H-SiC substrates</strong> for 1200V+ MOSFETs and Schottky barrier diodes, to <strong>InP epi-ready wafers</strong> for high-speed photodetectors and lasers — we deliver the right substrate for your epitaxial growth process.
Material Catalog
Gallium Arsenide (GaAs)
The workhorse of RF and microwave electronics. Direct bandgap of 1.42 eV enables efficient light emission for IR LEDs, laser diodes, and HBT/HEMT structures.
- SI-GaAs for RF switches, LNAs, power amplifiers (mobile, WiFi, SATCOM)
- N-type and P-type for optoelectronic devices (VCSELs, photodetectors)
- Available in 2″–6″ diameters, SSP and DSP
- Epi-ready with < 3 Å RMS surface roughness
Gallium Nitride (GaN)
Wide bandgap (3.4 eV) semiconductor enabling high-power, high-frequency, and high-temperature operation. Available on Si, SiC, or native GaN substrates.
- GaN-on-Si: Cost-effective for power HEMTs up to 650V
- GaN-on-SiC: Superior thermal for RF HEMTs (5G base stations, radar, EW)
- GaN-on-Sapphire: Blue/green/UV LED epitaxy
- Free-standing GaN: Lowest defect density for laser diodes
Silicon Carbide (SiC)
4H-SiC and 6H-SiC polytypes with exceptional thermal conductivity (490 W/m·K) and critical field (2.8 MV/cm). The preferred platform for next-generation power electronics.
- 4H-SiC: MOSFETs, JBS/MPS diodes (600V–3.3kV)
- Semi-insulating 4H-SiC for GaN HEMT epi on SiC
- 6H-SiC: Optoelectronics, UV photodiodes
- N-type and SI available, 100mm and 150mm diameters
Indium Phosphide (InP)
High electron velocity and direct bandgap at 1.34 eV. Essential for fiber-optic communications, sub-THz electronics, and high-efficiency photovoltaics.
- N-type and Fe-doped SI substrates
- 2″–4″ diameters, epi-ready polish
- DFB/FP lasers, PIN/APD photodetectors, EO modulators
- HBT and HEMT structures for >100 GHz operation
Sapphire (Al₂O₃)
Hexagonal crystal structure, transparent from UV to mid-IR. The industry-standard substrate for GaN LED epitaxy and silicon-on-sapphire (SOS) RF circuits.
- C-plane (0001) for LED epi; R-plane for SOS
- 2″–8″ diameters, SSP and DSP
- Patterned sapphire substrate (PSS) for improved LED extraction
- High thermal stability up to 1800°C
Aluminum Nitride (AlN)
Ultra-wide bandgap (6.2 eV) with thermal conductivity approaching 320 W/m·K. Critical for deep-UV LEDs, high-power RF packaging, and BAW/SAW filters.
- Single-crystal AlN substrates, 1″–2″ diameters
- Native substrate for AlGaN-based deep-UV LEDs (UVC disinfection)
- Polycrystalline AlN for thermal management applications
- SAW-grade AlN films on Si and sapphire
Technical Specifications
| Parameter | Available Range / Values |
|---|---|
| Materials | GaAs, GaN-on-Si, GaN-on-SiC, InP, SiC (4H-SiC, 6H-SiC), Sapphire, AlN, GaSb, InAs, InSb |
| Diameter | 50mm (2″), 76mm (3″), 100mm (4″), 150mm (6″), 200mm (8″) |
| Orientation | 〈100〉, 〈111〉, C-plane, R-plane, A-plane, M-plane (material-dependent) |
| Dopant / Type | Semi-Insulating (SI), N-type (Si-doped), P-type (Zn/Mg-doped), UID (unintentionally doped) |
| Thickness | 350μm–1000μm (custom thinning to 100μm available) |
| Surface Polish | SSP, DSP, Epi-Ready (RMS < 0.3nm for GaAs, < 0.5nm for SiC) |
| Resistivity | SI GaAs: > 10⁷ Ω·cm; N-type GaAs: 10⁻³–10⁻¹ Ω·cm; SI SiC: > 10⁵ Ω·cm |
| Micropipe Density (SiC) | < 1/cm² for high-grade 4H-SiC substrates (MPD down to 0.1/cm²) |
| EPD | GaAs: < 5×10³/cm²; InP: < 5×10⁴/cm²; SiC: < 5×10³/cm² |
| TTV / Bow / Warp | As low as < 5μm TTV, < 15μm Bow, < 20μm Warp |
| Packaging | Single-wafer cassettes, vacuum-sealed, Class 1 cleanroom packaging |
Application Matrix
| Application | Recommended Substrate | Key Property |
|---|---|---|
| Mobile RF Front-End | SI-GaAs | High electron mobility, SI resistivity |
| 5G Base Station PA | GaN-on-SiC | High power density, thermal management |
| Electric Vehicle Inverter | 4H-SiC | High breakdown voltage, low Rds(on) |
| 100G/400G Optical Transceiver | InP (SI) | Direct bandgap, high carrier velocity |
| Blue/Green LED | GaN-on-Sapphire | Lattice match, cost-effective, transparent |
| UVC LED (265nm) | AlN | UV-transparent, lattice-matched to AlGaN |
| mmWave Radar (77GHz) | SI-GaAs or InP | High-frequency gain, low noise figure |
| Radiation-Hard Electronics | 4H-SiC or GaN | Wide bandgap, radiation tolerance |
Quality & Supply Chain
All compound semiconductor substrates undergo rigorous incoming quality inspection including XRD rocking curve analysis, surface roughness measurement (AFM), resistivity mapping, and optical inspection for surface defects. Full lot traceability from crystal growth to final shipment is maintained throughout our ISO 9001:2015 certified supply chain.
Need Compound Semiconductor Substrates?
Specify your material, diameter, type, and epi-ready requirements — our engineering team will source the right substrate for your process within 24 hours.