Gallium Arsenide Wafers
GINECHIP supplies GaAs wafers with 2″–6″ diameters, controlled doping (N-type Si, P-type Zn), and production-ready surfaces for epitaxy. Orientations (100), (111)A, and (111)B with off-cut 2°–15° are available with growth by VGF/LEC/HB.
Overview
Gallium Arsenide (GaAs) is a compound semiconductor with a direct bandgap of 1.424 eV and high electron mobility of 8,500 cm²/V·s.
Choose substrate options including SI undoped, N-type Si (10⁻³–10⁻¹ Ω·cm), and P-type Zn; available orientations are (100), (111)A, and (111)B with off-cut 2°–15° and diameters of 2″–6″.
Epi-Ready surfaces target RMS <3Å for strong epitaxy readiness, with compliance to SEMI M1–M13 plus RoHS, REACH, and JEDEC.
Epi-Ready GaAs substrates with EPD down to <5×10²/cm² (UHP).
Crystal Growth Methods
We grow GaAs using VGF, LEC, and HB techniques to support different requirements for quality and epitaxy readiness.
VGF Prime
Best yield & quality
VGF (Vertical Gradient Freeze) GaAs is designed for low dislocation density and high resistivity. It offers the best yield and quality for photonic and RF substrate applications, with EPD controlled in the <5×10²–5×10³/cm² range.
LEC Volume
Mature volume production
LEC (Liquid-Encapsulated Czochralski) GaAs is optimized for mature volume production and stable process control. It is a strong fit for larger-diameter wafers, with EPD typically in the 1–5×10⁴/cm² range for good overall volume performance.
HB Specialty
Specialty geometries
HB (Horizontal Bridgman) GaAs can be provided with D-shape non-circular wafers for specialized form factors. This grade targets specialty geometries and can suit applications where the wafer outline is a key requirement, with EPD controlled at <5×10³/cm².
Growth Method Comparison
Compare VGF, LEC, and HB to match your priority, whether it is EPD performance, resistivity targeting, or overall yield for epi applications.
VGF — Best for Photonics & RF
VGF helps deliver low EPD, high resistivity, and strong yield, supporting epi-ready GaAs requirements for advanced device manufacturing.
LEC Volume Production
LEC provides mature volume production for larger GaAs wafer diameters, supporting scalable manufacturing.
HB Specialty (D-Shape)
HB wafers use D-shape specialty geometries, offering non-circular formats for targeted applications and customized layouts.
RF & Microwave Applications
Semi-insulating GaAs enables low-loss high-frequency devices for 5G, radar, and satellite systems, including power amplifiers and low-noise amplifiers.
RF devices on GaAs enable high-performance power amplifiers, low-noise amplifiers, and RF switches for demanding systems.
With electron mobility of 8,500 cm²/V·s, GaAs helps achieve strong high-frequency performance for 5G, radar, and satellite applications.
Semi-insulating GaAs for low-loss RF front-ends
Optoelectronics Applications
GaAs has a direct bandgap of 1.424 eV, supporting efficient light emission and absorption for LEDs and laser diodes.
GaAs wafers are well-suited for photodetectors and imaging applications, delivering reliable performance in demanding optical systems.
GaAs wafers support photovoltaics and solar cells, and they also play a role in optical communication systems.
Technical Specifications
| Parameter | Available Range / Values |
|---|---|
| Diameter | 2″ (50.8mm), 3″ (76.2mm), 4″ (100mm), 6″ (150mm) |
| Dopant Type | SI-Undoped, N-type Si-doped, P-type Zn-doped |
| Resistivity | SI: >10⁷ Ω·cm; N-type: 10⁻³–10⁻¹ Ω·cm |
| Crystal Orientation | (100), (111)A, (111)B, off-cut 2°–15° toward (110) |
| Thickness | 350μm, 500μm, 625μm standard (custom on request) |
| Surface Polish | SSP, DSP, Epi-Ready — RMS < 3Å (AFM 5×5μm) |
| EPD (Etch Pit Density) | < 5×10³/cm² (prime); < 5×10²/cm² (UHP grade) |
| TTV / Bow / Warp | TTV < 5μm, Bow < 10μm, Warp < 15μm |
| Electron Mobility (μₑ) | 8,500 cm²/V·s (undoped GaAs at 300K) |
| Bandgap | 1.424 eV (direct, Γ-valley) |
| Dislocation Density | Grade-dependent: prime < 5×10³/cm²; UHP < 5×10²/cm² |
| Growth Methods | VGF (Vertical Gradient Freeze), LEC (Liquid-Encapsulated Czochralski), HB (Horizontal Bridgman) |
| Backside Treatment | Etched, polished, or laser-marked per customer specification |
| Laser Mark | SEMI M12/M13 compliant: soft-mark on front or back side |
| Flat / Notch | Per SEMI M1: EJ (EJ-standard) or US flat configuration |
| Particle Count @ 0.3μm | ≤ 10 particles (laser surface scan, SEMI M53 equivalent) |
| Packaging | Vacuum-sealed single-wafer cassettes, Class 100 cleanroom |
| Compliance | SEMI M1–M13, RoHS, REACH, JEDEC |
Applications
RF & Microwave Devices
Semi-insulating GaAs enables high-frequency low-loss devices for 5G, radar, and power amplifiers.
LEDs & Optoelectronics
Direct bandgap for efficient light emission supports LEDs and optoelectronic components.
Imaging & IR Sensors
GaAs photodetectors and infrared imaging benefit from direct bandgap characteristics.
R&D Substrates
Custom orientations support research needs with options including (100) and (111) variants.
High-Speed Communications
Broadband and high-speed digital applications can leverage GaAs properties for fast performance.
Satellite & Aerospace
Radiation-tolerant electronics are supported by GaAs wafers for satellite and aerospace systems.
Quality & Certification
GINECHIP GaAs wafers are produced under ISO 9001:2015 with 100% inspection, and available to match SEMI M1–M13 standards as well as RoHS/REACH requirements.
Request a GaAs Quote
Share your custom specifications and we will prepare a quote. Send your requirements to our team for a fast response.