Photoresists & Chemicals
photoresistsChemicals.desc
Overview
The photolithography module consumes a diverse portfolio of specialty chemicals — and the choice of photoresist, developer, and ancillary chemicals is one of the most consequential decisions in any semiconductor process flow. The right resist delivers resolution, sidewall profile, and process latitude. The wrong one wastes wafers. GINECHIP supplies the complete chemical suite for photolithography: photoresists, developers, adhesion promoters, edge bead removers, and strippers — sourced from leading global manufacturers with full lot traceability and cold-chain logistics where required.
Our photoresist portfolio covers every major lithography platform: i-line (365nm) DNQ-Novolac resists for mainstream MEMS and microelectronics, DUV (248nm) chemically amplified resists for sub-quarter-micron patterning, e-beam resists (PMMA, ZEP, HSQ) for nanolithography and mask writing, and SU-8 and thick positive resists for MEMS, microfluidics, and wafer-level packaging applications requiring film thicknesses up to 200μm or more.
Photoresist Families & Selection Guide
Positive i-line (DNQ-Novolac)
The most widely used photoresist type in semiconductor manufacturing. DNQ (diazonaphthoquinone) photoactive compound in a novolac resin matrix. Exposed areas become soluble in aqueous TMAH developer. Excellent resolution, thermal stability, and etch resistance.
- Resolution: 0.35–1.0μm (i-line stepper)
- Film thickness: 0.5–5μm (single coat)
- Developer: 0.26N or 2.38% TMAH (standard)
- Wide process latitude for manufacturing
Negative i-line / Broadband
Cross-linking negative resists where exposed areas polymerize and become insoluble. Generally offer superior adhesion, wider process window, and better chemical resistance than positive resists — at the cost of slightly lower resolution.
- Resolution: 0.5–2.0μm
- Superior adhesion to metals and III-V substrates
- Excellent for lift-off processes (re-entrant profile)
- Good for electroplating molds and etch masks
SU-8 (Epoxy-Based Negative)
Thick-film epoxy photoresist capable of single-coat thicknesses from 1μm to over 200μm with near-vertical sidewalls. The standard choice for MEMS structural layers, microfluidic channels, and high-aspect-ratio permanent structures.
- Thickness: 1μm–200μm+ (single or multiple coats)
- Aspect ratios exceeding 20:1 achievable
- Excellent chemical and thermal stability after hard bake
- Developer: PGMEA (SU-8 Developer)
E-Beam Resist (PMMA, ZEP, HSQ)
Ultra-high-resolution resists for electron-beam lithography systems. PMMA (positive) is the gold standard for sub-50nm patterning. ZEP (positive) offers higher sensitivity and etch resistance. HSQ (negative) provides exceptional resolution and acts as a direct-patternable SiO₂-like material.
- Resolution: < 10nm (HSQ), < 30nm (PMMA)
- Developer: MIBK:IPA (PMMA), ZED-N50 (ZEP), TMAH (HSQ)
- For mask writing, nanophotonics, and research
- High-purity grades available — metals < 10 ppb
Technical Specifications
| Parameter | Available Range / Values |
|---|---|
| Photoresist Type | Positive (DNQ-Novolac), Negative (cross-linking), Chemically Amplified (CA), SU-8 (epoxy-based), PMMA (e-beam), Dry film resist |
| Exposure Wavelength | g-line (436nm), h-line (405nm), i-line (365nm), Broadband (350–450nm), DUV (248nm), 193nm, e-beam, X-ray |
| Film Thickness Range | Standard: 0.3μm–5μm (single coat); Thick resist: 5μm–200μm (SU-8, multiple coats); Ultra-thin: 50nm–300nm |
| Polarity | Positive (exposed areas dissolve), Negative (exposed areas cross-link and remain), Image reversal |
| Developer | TMAH (0.26N, 2.38%), KOH-based, MIBK:IPA (PMMA), PGMEA (SU-8), custom developer formulations |
| Adhesion Promoter | HMDS (hexamethyldisilazane) — vapor prime and spin-on; AP3000, AP8000, OmniCoat |
| Edge Bead Remover | PGMEA, Acetone, EBR-specific solvents; compatible with all common photoresist families |
| Stripper | NMP (N-Methyl-2-pyrrolidone), DMSO-based, Acetone, Remover PG, Plasma O₂ ash, Piranha (H₂SO₄:H₂O₂) |
| Substrate Compatibility | Silicon, SiO₂, SiN, GaAs, InP, Glass, Sapphire, Metals (Al, Cu, Au, Ti), Polymers |
| Shelf Life | Typically 6–12 months at 4–25°C (refrigerated storage); date-coded; cold-chain shipping available |
| Packaging | 100mL, 250mL, 500mL, 1L, 1 Gallon amber glass or HDPE bottles; NowPak bag-in-bottle for high-purity |
Ancillary Lithography Chemicals
Developers
- TMAH (Tetramethylammonium Hydroxide) — Metal-ion-free developer; 0.26N (2.38%) standard concentration for i-line positive resists. IC-grade purity with < 1 ppb metal contamination.
- KOH-Based Developers — Higher selectivity for certain resist families; higher metal ion content — not suitable for CMOS front-end.
- MIBK:IPA (1:3) — Standard developer for PMMA e-beam resist; temperature-controlled development for optimal contrast.
- PGMEA (SU-8 Developer) — Optimized developer for SU-8 processing with controlled dissolution rate.
HMDS & Adhesion Promoters
- HMDS Vapor Prime — Hexamethyldisilazane applied via vapor priming oven or hotplate. Promotes adhesion by converting surface hydroxyl (-OH) groups to hydrophobic trimethylsilyl groups.
- HMDS Spin-On (Liquid) — Alternative to vapor prime; dispense and spin before resist coating.
- AP3000 / AP8000 — Advanced adhesion promoters for challenging substrates (metals, III-V semiconductors, polymers).
- OmniCoat — Spin-on universal adhesion promoter compatible with SU-8 and other epoxy resists.
Process Integration & Compatibility
Edge Bead Removers (EBR)
Solvent dispensed at the wafer edge during spin coating to remove the raised resist bead that forms at the wafer perimeter. Essential for contact lithography (prevents mask contamination) and for maintaining CD uniformity across the wafer.
Anti-Reflective Coatings (BARC / TARC)
Bottom anti-reflective coating (BARC) applied under the resist; top anti-reflective coating (TARC) applied on top. Suppress standing wave effects in the resist film for improved CD control and reduced reflective notching over topography.
Resist Strippers
Solvent-based (NMP, DMSO, acetone) and aqueous-based strippers for post-etch and post-implant resist removal. Plasma O₂ ash followed by wet clean for complete residue-free removal. Piranha clean for ultimate organic removal.
Applications
Quality & Certification
All photoresists and chemicals are sourced from ISO 9001:2015 certified manufacturers with full lot traceability and Certificate of Analysis (CoA). For CMOS-grade applications, metal-ion-free grades with < 1 ppb Na, K, Fe, and Cu contamination are available. Cold-chain shipping (2–8°C refrigerated transport) is provided for temperature-sensitive products. Expiration date management ensures you receive product with maximum remaining shelf life. Dangerous goods shipping (IATA/IMDG-compliant) is standard for solvent-based products.
Need Photoresists for Your Process?
Tell us your lithography wavelength, film thickness target, resist polarity, and substrate — we'll recommend the optimal resist and provide a quotation within 24 hours.