Advanced Packaging
Beyond Moore's Law — 2.5D interposers, 3D die stacking, fan-out wafer-level packaging, and TSV substrates.
Overview
Advanced packaging is the semiconductor industry's key path beyond Moore's Law. GINECHIP delivers full-stack advanced packaging substrates and process services spanning 2.5D silicon interposers, 3D-IC stacking, fan-out wafer-level packaging (FOWLP), and TSV technology, supporting heterogeneous integration from chip-level to system-level.
We deliver industry-leading quality and precision — every process runs in an ISO Class 5 cleanroom environment, ensuring the highest reliability and yield.
Packaging Technologies
2.5D Silicon Interposer
TSV-based silicon interposers route high-density signals between multiple dies on a single carrier, enabling the wide I/O connections HBM memory stacks and multi-die SoCs require.
3D Die Stacking & Hybrid Bonding
Vertical die-to-die and wafer-to-wafer stacking using thermocompression or Cu-Cu hybrid bonding delivers the shortest possible interconnects for HBM, image sensor, and logic-on-logic 3D-IC architectures.
Fan-Out Wafer-Level Packaging (FOWLP)
Known-good die are reconstituted into a molded wafer and redistributed with fine-pitch Cu RDL, eliminating the substrate for a thinner, lower-cost package with excellent electrical performance.
Fan-Out System-in-Package (SiP)
Ultra-fine 1μm RDL, integrated passive devices, and Cu EMI shielding combine multiple dies into a single fan-out module for RF front-end and compact SiP applications.
Flip-Chip BGA (FC-BGA)
Flip-chip die are mounted directly onto laminate substrates with microvia interconnects and mSAP fine-line routing — the workhorse packaging platform for CPUs, GPUs, and networking ASICs.
Glass Interposer (TGV)
Through-glass vias on ultra-flat, low-loss glass substrates offer a tunable CTE and superior RF performance versus silicon, ideal for high-frequency RDL and large-panel fan-out interposers.
Available Process Services
Fine-pitch redistribution layer routing and under-bump metallization for wafer-level interconnect, from standard 10μm to ultra-fine 0.4μm line/space.
Through-silicon and through-glass via drilling, liner deposition, and Cu fill for high-density vertical interconnect in 2.5D/3D packages.
Precision backgrinding and stress-relief polishing down to sub-50μm final thickness for TSV reveal and 3D stacking.
Thermocompression and Cu-Cu hybrid bonding services for 3D-IC stacking, with sub-micron alignment accuracy.
Die placement, epoxy mold compound overmolding, and reconstituted wafer/panel processing for FOWLP and fan-out SiP.
AOI, X-ray, C-SAM, and cross-section analysis for RDL integrity, via fill quality, and package-level reliability verification.
Key Application Areas
2.5D silicon interposers connect logic dies to HBM memory stacks, delivering the interconnect bandwidth density required by AI training and inference silicon.
TSV interposers and Cu-Cu hybrid bonding stack multiple DRAM dies with the wide I/O interfaces required for HBM3 and HBM3E memory cubes.
FOWLP and fan-out SiP shrink package footprint and z-height for application processors and RF modules in smartphones and wearables.
Fine-pitch RDL with integrated passives and Cu EMI shielding packs filters, switches, and power amplifiers into compact RF front-end modules.
Reliable flip-chip BGA and fan-out packaging rated for extended temperature ranges and vibration in ADAS, power modules, and industrial controls.
High-density 2.5D packaging links switch ASICs to optical engines and SerDes chiplets for next-generation networking silicon.
RDL Design Rules
| Parameter | Standard RDL (≤ 10μm L/S) | Fine-Line RDL (≤ 5μm L/S) | Ultra-Fine RDL (≤ 2μm L/S) |
|---|---|---|---|
| Minimum L/S | 5/5μm | 2/2μm | 0.4/0.4μm |
| Cu Thickness | 5–8μm | 3–5μm | 1–3μm |
| Via Diameter | 20–30μm | 10–15μm | 5–10μm |
| Dielectric | Polyimide (PID) | Polyimide or BCB | SiO₂ (CVD) |
| Dielectric Constant (k) | 3.0–3.5 | 2.6–3.0 | 3.9 (SiO₂) |
| Number of Layers | 1–3 | 2–5 | 2–8 |
| Cu Deposition Method | Semi-additive (SAP) | SAP or Damascene | Cu Damascene |
| Planarization | None or CMP | CMP | CMP (per layer) |
Substrate Selection
Substrate selection is critical to overall packaging performance in advanced packaging. Our engineering team will recommend the best substrate material and specification combination based on your packaging architecture, thermal budget, and electrical performance requirements.
Quality & Metrology
Every RDL and TSV process runs in an ISO Class 5 cleanroom with full in-line metrology, backed by our ISO 9001:2015 quality system.
Ready to Get Started?
Contact our engineering team to discuss your specific requirements and receive a detailed quotation within 24 hours.