SiC Wafer Substrate
sicWaferSubstrate.desc
Overview
Silicon Carbide (SiC) has emerged as the premier wide-bandgap semiconductor substrate for next-generation power electronics, RF devices, and high-temperature applications. With a bandgap of 3.26 eV (4H-SiC) — nearly 3× that of silicon — and a critical electric field of 2.8 MV/cm, SiC enables devices that block higher voltages, switch faster, and operate at temperatures exceeding 200°C. The industry is rapidly transitioning to 200mm (8-inch) SiC substrates, driven by the need for economies of scale in EV power module production. GINECHIP supplies 150mm and 200mm 4H-SiC and 6H-SiC substrates with N-type doping and semi-insulating grades, supporting the full spectrum from R&D prototyping to high-volume automotive production.
At GINECHIP, we source 4H-SiC and 6H-SiC substrates from leading PVT (Physical Vapor Transport) crystal growers. Our 200mm (8-inch) SiC wafers are CMP-finished to epi-ready surface quality (Ra < 0.2nm), enabling direct epitaxial growth of SiC drift layers for MOSFET and Schottky diode fabrication. We offer both N-type (Nitrogen-doped, 0.015–0.030 Ω·cm) for vertical power devices and semi-insulating (Vanadium-doped, > 1×10⁶ Ω·cm) for GaN-on-SiC RF HEMT applications. Every lot ships with comprehensive metrology data including XRD rocking curves, micropipe density maps, and AFM surface roughness measurements.
Material Properties — SiC vs. Silicon
| Property | 4H-SiC | 6H-SiC | Silicon (Si) |
|---|---|---|---|
| Bandgap (eV) | 3.26 | 3.02 | 1.12 |
| Critical Field (MV/cm) | 2.8 | 2.5 | 0.3 |
| Electron Mobility (cm²/V·s) ⊥ c | 1,000 | 400 | 1,400 |
| Hole Mobility (cm²/V·s) | 115 | 90 | 450 |
| Thermal Conductivity (W/cm·K) | 4.9 | 4.9 | 1.5 |
| Saturated Drift Velocity (×10⁷ cm/s) | 2.0 | 2.0 | 1.0 |
| Melting Point (°C) | 2,730 (sublimes) | 2,730 (sublimes) | 1,415 |
| Baliga FOM (normalized to Si) | 340 | 200 | 1 |
4H-SiC is the dominant polytype for power devices due to higher electron mobility and wider bandgap vs. 6H-SiC. 6H-SiC is used in some optoelectronic and specialized RF applications. Baliga FOM = ε·μ·Ec³, normalized to silicon.
Crystal Growth & Substrate Processing
Unlike silicon, SiC cannot be grown via conventional melt-based methods because it sublimes rather than melts at atmospheric pressure. The industry relies on Physical Vapor Transport (PVT) — also called seeded sublimation — conducted at temperatures exceeding 2,200°C in argon atmosphere. GINECHIP partners with crystal growers who have demonstrated mastery of each critical process step:
PVT Bulk Crystal Growth
High-purity SiC source powder is sublimed at 2,200–2,500°C in a graphite crucible and re-condensed on a seed crystal. 4H-SiC polytype stabilization requires precise control of temperature gradient, pressure, and seed orientation (4° off-axis). 200mm boule growth demands exceptional thermal field uniformity — a key differentiator among crystal growers.
Wafering & Surface Preparation
Boules are diamond-wire sawn into wafers, then processed through a sequence of lapping, grinding, and diamond slurry polishing. The final CMP (Chemical Mechanical Polishing) step produces an atomically smooth, damage-free surface with Ra < 0.2nm — essential for high-quality homoepitaxial SiC growth. Edge profiling and laser marking are applied per SEMI standards.
Homoepitaxial Layer Growth
While GINECHIP supplies bare substrates, our partners offer CVD homoepitaxial growth of N-type 4H-SiC drift layers (typically 5–15μm thick, doping 1×10¹⁵–1×10¹⁶ cm⁻³) directly on our substrates. This epi-ready surface quality ensures minimal buffer layer defects and consistent threshold voltage control — critical for MOSFET fabrication yields.
Technical Specifications
| Parameter | Specification |
|---|---|
| Diameter | 150mm (6″), 200mm (8″) |
| Polytype | 4H-SiC, 6H-SiC |
| Dopant / Type | N-type (Nitrogen), Semi-insulating (Vanadium), V-doped SI |
| Resistivity | N-type: 0.015–0.030 Ω·cm; SI: > 1×10⁶ Ω·cm |
| Orientation | 4° off-axis toward 〈11-20〉 (4H-SiC standard) |
| Thickness | 350μm, 500μm (standard); custom thicknesses available |
| Grade | Prime (production), Test (monitor), Research-grade |
| Polish | CMP-finished, epi-ready surface; Ra < 0.2nm |
| Micropipe Density | ≤ 0.5/cm² (production); ≤ 0.1/cm² (automotive-grade) |
| BPD Density | ≤ 500/cm² (post-epi conversion to TED) |
| TTV / Bow / Warp | TTV < 5μm, Bow < 25μm, Warp < 35μm |
| Surface Defects | Scratch-free, pit-free; particle < 20 adds @ 0.2μm |
Quality Specifications & Inspection Methods
| Parameter | Specification | Inspection Method |
|---|---|---|
| Micropipe Density | ≤ 0.5/cm² (≤ 0.1/cm² automotive) | KLA Candela / Laser scanning |
| BPD Density / TED Conversion | ≤ 500/cm² → TED conversion | KOH etch-pit + Nomarski microscopy |
| Resistivity Uniformity | 15–30 mΩ·cm (N-type); > 1E6 Ω·cm (SI) | Eddy current / 4-point probe |
| Surface Roughness (Ra) | Ra < 0.2nm (epi-ready) | AFM (10μm × 10μm scan) |
| Total Thickness Variation (TTV) | < 5μm | Capacitance gauge scanning |
| Bow / Warp | Bow < 25μm, Warp < 35μm | Optical profilometry / Tencor FLX |
| Crystal Quality (XRD FWHM) | FWHM < 50 arcsec (0004 reflection) | High-resolution XRD rocking curve |
| Particle Count | ≤ 20 adds @ 0.2μm | KLA-Tencor Surfscan / SiC-specific SPx |
All measurements performed in ISO Class 5 (Class 100) cleanroom environment. Full metrology report included with each lot shipment. Automotive-grade specifications require additional screening per AEC-Q101.
Applications
800V SiC MOSFET-based traction inverters deliver 5–10% range extension vs. silicon IGBTs. Automotive-grade 200mm 4H-SiC substrates with micropipe density < 0.1/cm² for AEC-Q101 qualified devices.
SiC MOSFET and SBD modules in 30kW–350kW DC fast-charging stacks achieve > 97% efficiency. High-voltage blocking to 3.3kV on 4H-SiC for next-generation ultra-fast chargers.
SiC-based variable frequency drives reduce motor drive footprint by 40–60% while improving efficiency by 2–5%. Integrated SiC power modules on 200mm substrates for cost-effective scaling.
SiC MOSFETs in PV string inverters (5–50kW) and energy storage bidirectional converters. 4H-SiC substrates with proven reliability for 25-year field lifetimes in solar installations.
Semi-insulating 4H-SiC substrates for GaN-on-SiC HEMT RF power amplifiers. Thermal conductivity of 4.9 W/cm·K enables high-power-density 5G base station PAs and radar systems.
4H-SiC wide bandgap (3.26 eV) enables device operation at junction temperatures exceeding 200°C. Downhole drilling, aerospace engine sensors, and nuclear instrumentation.
The 200mm Transition — Why 8-Inch SiC Matters
The SiC industry is replicating silicon's scaling playbook: transitioning from 150mm to 200mm (8-inch) substrates to achieve the cost reductions necessary for mainstream EV adoption. Moving from 150mm to 200mm yields approximately 1.8× more die per wafer, directly translating to lower cost per device. Major SiC device manufacturers — including Wolfspeed, STMicroelectronics, ON Semiconductor, and Infineon — have announced 200mm SiC production capabilities, with volume manufacturing ramping through 2024–2026. GINECHIP's 200mm SiC substrate supply chain is positioned to support this industry inflection, offering both R&D quantities for process development and production volumes for high-volume manufacturing.
Need 8-Inch SiC Substrates?
Tell us your polytype (4H/6H), doping type, diameter, and quantity — our engineering team will respond with a competitive quote including full metrology data within 24 hours.