Quick-reference material properties for semiconductor substrate and thin-film selection. Electrical, thermal, mechanical, and optical data for design and process engineers.
Substrate & Thin-Film Materials
This guide consolidates key material property data commonly referenced during substrate selection, process design, and device thermal management. Values are representative for high-quality single-crystal substrates and state-of-the-art thin-film depositions at room temperature unless otherwise noted.
Resistivity: 2.65 μΩ·cmMelting point: 660°CCTE: 23.1 ppm/KDensity: 2.70 g/cm³Adhesion: Ti or Cr interlayerEtch: Cl₂/BCl₃ RIEDeposition: PVD sputteringTypical thickness: 0.5–3μm
Gold (Au, electrode/bond pad)
Metal
Resistivity: 2.44 μΩ·cmMelting point: 1064°CCTE: 14.2 ppm/KDensity: 19.3 g/cm³Adhesion: Cr or Ti interlayerEtch: Ar ion milling or KI/I₂Deposition: e-beam or sputterWire bond: Au or Al wire
How to Use This Guide
Material selection is a multi-parameter optimization problem. The key property decisions depend on your application: for power devices — prioritize bandgap, breakdown field, thermal conductivity; for RF/mmWave — electron mobility, saturation velocity, substrate resistivity; for MEMS — Young's modulus, residual stress, CTE match to device layers; for photonics — refractive index, optical transparency window, electro-optic coefficient; for packaging — CTE match to die, thermal conductivity, dielectric constant.
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