Thin-Film Coating & Deposition
Full-spectrum thin-film deposition capabilities — from single-layer metals to complex multi-layer optical stacks. PVD, CVD, ALD, and electrochemical deposition on wafers up to 300mm.
Overview
Thin-film deposition is the cornerstone of semiconductor device fabrication — defining the electrical, mechanical, and optical properties of every layer in the device stack. GINECHIP offers a comprehensive portfolio of physical and chemical deposition processes, from DC magnetron sputtering for metallization to plasma-enhanced ALD for ultra-conformal dielectric layers.
Our deposition services span the full material spectrum: metals (Al, Ti, Au, Pt, Cu), dielectrics (SiO₂, Si₃N₄, Al₂O₃, HfO₂), semiconductors (poly-Si, a-Si, GaN), and polymers (polyimide, BCB, parylene). Whether you need a simple single-layer metal contact or a precision 50-layer DBR mirror stack with sub-nanometer thickness tolerance, our process engineering team delivers consistent, documented results.
Deposition Techniques
PVD — Physical Vapor Deposition
Material is vaporized from a solid source in vacuum and condenses onto the wafer surface. Includes sputtering (DC, RF, magnetron, reactive) and thermal/e-beam evaporation. Enables deposition of metals (Al, Ti, Au, Pt, Cr, Ni, Cu), dielectrics (SiO₂, Al₂O₃, TiO₂), and transparent conductive oxides (ITO, AZO).
CVD — Chemical Vapor Deposition
Gaseous precursors react on the heated wafer surface to form a solid thin film. Offers superior conformality and step coverage compared to PVD. Processes include LPCVD, PECVD, APCVD, and MOCVD for dielectrics, polysilicon, and epitaxial layers.
ALD — Atomic Layer Deposition
Self-limiting surface reactions produce films one atomic layer at a time. Achieves ultimate conformality on high-aspect-ratio structures (AR > 100:1), sub-nanometer thickness control, and pinhole-free dielectric layers essential for advanced gate dielectrics and passivation.
Electroplating & Electroless
Electrochemical deposition of thick metal films for wafer-level packaging, TSV filling, Cu pillars, and RDL traces. Electroless plating enables uniform deposition on non-conductive surfaces without external current.
Spin-On Dielectrics & Polymers
Liquid-phase deposition of dielectric and polymer films by spin coating. Includes SOG (Spin-On-Glass), HSQ, photoresist planarization layers, BCB, polyimide, and SU-8 for MEMS structural layers and interlayer dielectrics.
Available Film Materials
Metals
Al, AlSi, AlCu, Ti, TiN, TiW, Cr, Ni, Au, Pt, Cu, Ag, W, Mo, Ta
Dielectrics
SiO₂, Si₃N₄, SiON, TEOS, Al₂O₃, HfO₂, ZrO₂, TiO₂, Ta₂O₅, BST, PZT
Semiconductors
a-Si, poly-Si, μc-Si, SiGe, Ge, GaN, AlN, InGaAs, ZnO, IGZO
Polymers
Polyimide, BCB, SU-8, Parylene-C, PMMA, SOG, HSQ, photoresist
TCOs & Conductors
ITO, AZO, FTO, graphene (CVD), CNT films, Ag nanowire networks
Optical Coatings
AR stacks, DBR mirrors, bandpass filters, dichroic mirrors, metallic reflectors
Process Quality Metrics
| Quality Parameter | Target Specification | Measurement Method |
|---|---|---|
| Thickness Uniformity (WIW) | < 1% (1σ) for ALD; < 3% for PVD/CVD | Spectroscopic Ellipsometry / Profilometry |
| Thickness Uniformity (WTW) | < 2% (1σ) | Multi-point Ellipsometry Mapping |
| Refractive Index (n, k) | ±0.005 of target | Spectroscopic Ellipsometry (190–1700nm) |
| Film Stress | Custom: compressive or tensile (0–2 GPa) | Wafer Bow / Tencor FLX |
| Step Coverage (conformality) | > 95% (LPCVD); > 99% (ALD) | Cross-Sectional SEM / TEM |
| Adhesion | Passes tape test (ASTM D3359) | Cross-hatch / Scribe Test |
| Particle Density | < 10 adds @ 0.2μm (PVD); < 5 adds (ALD) | KLA-Tencor Surfscan |
| Resistivity | Within 5% of bulk value | 4-Point Probe / Sheet Resistance Mapping |
Typical Applications
PZT piezoelectric films, AlN for BAW/SAW filters, VO₂ for thermal switches, and structural SiO₂/Si₃N₄ layers for cantilevers and membranes.
Ti/TiN barrier and liner layers, Al and Cu metallization, SiN passivation, and low-k dielectrics for interconnect stacks.
Thick Al metallization (4–10μm) for IGBT and MOSFET top-side contacts. AlN and diamond-like carbon (DLC) for thermal management.
ITO transparent electrodes, AR coatings (SiO₂/TiO₂ multilayers), DBR mirror stacks, and waveguide cladding layers.
UBM stacks (Ti/Cu, TiW/Cu), RDL Cu traces, micro-bump metallization, and dielectric isolation layers for 2.5D/3D integration.
Biocompatible coatings (TiO₂, parylene, PEG), hydrophobic/hydrophilic surface treatments, and electrode metallization for biosensors.
Multi-Layer & Gradient Films
Beyond single-layer deposition, we specialize in complex multi-layer stacks and compositionally graded films. Common examples include: DBR mirrors (SiO₂/TiO₂ or SiO₂/Ta₂O₅ alternating layers), AR coatings (2–6 layer broadband), ONO stacks (oxide-nitride-oxide), graded-index layers (rugate filters), and metal-dielectric-metal capacitor stacks. In-situ monitoring with quartz crystal microbalance (QCM) and optical reflectance ensures real-time thickness control during deposition.
Substrate Compatibility
Our deposition systems accommodate a wide range of substrate materials: silicon (all grades, orientations, and diameters), glass (fused silica, borosilicate, quartz), compound semiconductors (GaAs, InP, GaN-on-SiC, SiC), sapphire, SOI, and ceramic substrates (Al₂O₃, AlN). Pre-deposition cleaning protocols (RCA clean, piranha etch, plasma ashing) are tailored to each substrate type to ensure optimal adhesion and film quality.
Quality Assurance
Every deposition lot undergoes comprehensive QC: spectroscopic ellipsometry for thickness and optical constants (n, k), 4-point probe for sheet resistance, profilometry and AFM for surface roughness, wafer bow measurement for film stress, optical microscopy for defect inspection, and cross-sectional SEM/TEM on monitor wafers. Full process documentation and Certificate of Conformance are provided with each shipment.
Ready to Deposit?
Specify your film material, target thickness, substrate type, and wafer quantity — our process engineers will provide a detailed quotation and process timeline within 24 hours.