Thin Film Coating Deposition
PVD, CVD, and ALD processes for oxide, nitride, metal, and dielectric thin films on 200mm and 300mm wafers.
Overview
Thin-film deposition is the foundation of semiconductor and MEMS device fabrication. From gate dielectrics to metal interconnects, optical coatings to passivation layers — every layer demands precision thickness control, composition uniformity, and low defect density. GINECHIP provides a comprehensive suite of deposition technologies under one roof.
Our capabilities span physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), and electrochemical deposition (ECD). With ISO Class 5 cleanroom processing for 100mm to 300mm wafers, we deliver films with sub-nanometer thickness control, < ±1% uniformity, and full metrology documentation.
Deposition Technologies
Physical Vapor Deposition (PVD)
Sputtering and evaporation processes for metals, alloys, and dielectric films from 100mm to 300mm wafers. DC/RF magnetron sputtering, e-beam evaporation, and thermal evaporation cover the full range of conductor and insulator materials used in interconnect and optical stacks.
Chemical Vapor Deposition (CVD)
LPCVD, PECVD, and MOCVD processes deposit conformal oxide, nitride, polysilicon, and III-V epitaxial layers across a wide temperature range. Excellent step coverage makes CVD the standard choice for structural and passivation layers in MEMS and IC fabrication.
Atomic Layer Deposition (ALD)
Self-limiting surface reactions deposit ultra-thin, pinhole-free dielectric and metal films with sub-nanometer thickness control. Ideal for high-k gate dielectrics, diffusion barriers, and conformal coating of high-aspect-ratio structures.
Electrochemical Deposition (ECD)
Electroplating of Cu, Ni, Au, Sn, and Ag for interconnects, TSV fill, and UBM stacks. High-aspect-ratio copper TSV filling and electroless Ni/Au pad metallization support advanced packaging and MEMS applications.
Polymer & Spin-On Dielectrics
Spin-coated SOG, BCB, polyimide, and SU-8 layers provide low-stress dielectric isolation, planarization, and thick structural layers. Suited for redistribution layers, MEMS structural elements, and flexible device applications.
Film Materials
Oxides & Dielectrics
SiO₂ · Al₂O₃ · HfO₂ · Si₃N₄ · Ta₂O₅
Metals
Al · Ti · Cr · Ni · Pt · Au · Cu · W · Mo
Transparent Conductive Oxides
ITO · AZO · FTO
Hard & Wear-Resistant Coatings
DLC · TiN · CrN
Polymers & Organics
Parylene · Polyimide · BCB · SU-8
Piezoelectric & Ferroelectric
AlN · ZnO · PZT
Quality Metrics
| Parameter | Target | Measurement Method |
|---|---|---|
| Film Adhesion | Pass ASTM D3359 cross-hatch tape test | Cross-Hatch Tape Test |
| Pinhole Density | < 0.1 pinholes/cm² (post-deposition) | Wet Etch Decoration + Optical Inspection |
| Step Coverage (Conformality) | > 80% at 5:1 aspect ratio | Cross-Section SEM |
| Stress Repeatability (Lot-to-Lot) | ± 10 MPa (3σ) | Wafer Curvature (Stoney Equation) |
| Metallic Contamination | < 5×10¹⁰ atoms/cm² (TXRF) | TXRF Analysis |
| Thermal Cycling Adhesion | No delamination after 500 cycles (−55°C to 125°C) | Thermal Shock Chamber + Tape Test |
| Thickness Repeatability (Run-to-Run) | ± 1.5% (3σ) | SPC Chart (Ellipsometry) |
| Wafer Bow Change (Post-Deposition) | < 25μm (200mm), < 40μm (300mm) | Capacitive Gauge / Interferometry |
Typical Applications
Poly-Si structural layers via LPCVD. SiO₂ sacrificial layers via PECVD or thermal oxidation. Si₃N₄ membranes and passivation. Low-stress films for released microstructures: accelerometers, gyroscopes, pressure sensors.
Anti-reflection (AR) and high-reflectivity (HR) multilayer coatings via e-beam evaporation or sputtering. ITO transparent electrodes. DBR mirrors. Waveguide cladding layers. SiO₂/TiO₂ and SiO₂/Ta₂O₅ stacks.
Al and Ti/TiN barrier/glue layer stacks via PVD sputtering. Cu seed layers for electroplating. Ta/TaN diffusion barriers. Ni/Au pad metallization for wire bonding.
PECVD Si₃N₄ and SiO₂/Si₃N₄ stacks for moisture barriers. Parylene conformal coating for implantable medical devices. ALD Al₂O₃ ultra-thin moisture barriers (< 10nm). Multilayer hermetic encapsulation films.
PVD sputtered AlN and ZnO for SAW/BAW filters and energy harvesters. PZT (sol-gel or sputtered) for MEMS actuators and inkjet printheads. Sc-doped AlN for enhanced piezoelectric response. Wafer-level deposition with post-anneal poling.
NiCr, TaN, and WTi thin-film resistors with TCR < 50 ppm/°C. Pt RTD temperature sensors and micro-heaters. Sheet resistance 10–1000 Ω/sq. Laser trimming for precision resistance value. MEMS gas sensors and microbolometers.
Multi-Layer Stacks
Our multi-layer deposition capability enables complex thin-film stacks with precise thickness control. Each layer is deposited sequentially with in-situ monitoring, ensuring interlayer adhesion and interface quality.
Substrate Compatibility
Our reclaim processes support silicon wafers of all common dopant types, orientations, and diameters. We also offer reclaim for SOI, glass, and compound semiconductor substrates with dedicated process chemistries for each material system.
Quality Assurance
Quality acceptance criteria per SEMI and customer specification. Film stress control < 50 MPa for MEMS applications. Refractive index tolerance ±0.005. Adhesion testing per MIL-STD-883. Certificate of Conformance with each lot.
Need Thin-Film Deposition?
Tell us your film material, target thickness, uniformity requirements, and substrate — our team will respond with a detailed quotation within 24 hours.