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Silicon · GaAs · InP · SiC · SapphireIngot Material Types
CZ · FZ · LEC · VGF · KyropoulosGrowth Methods
2″–18″ DiameterIngot Size Range
1 Ingot to TruckloadVolume Flexibility
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Overview

For customers operating their own wafering, grinding, and polishing lines, purchasing bulk ingots offers significant cost advantages over finished wafers. GINECHIP supplies silicon ingots, compound semiconductor boules, and bulk crystal material directly from crystal growth foundries — cutting out intermediate processing costs and providing maximum flexibility for your downstream manufacturing.

We bridge the gap between crystal growers and wafer manufacturers, offering full ingot certification (resistivity profile, lifetime mapping, crystallographic orientation verification) and flexible logistics for shipments ranging from a single R&D ingot to multi-ton production volumes.

Product Categories

Silicon Ingots

CZ Silicon Ingots

Czochralski-grown single-crystal silicon ingots for standard semiconductor and solar-grade applications. Available in all standard diameters with tight resistivity control.

  • Diameter: 100mm–300mm (4″–12″), custom up to 450mm
  • Type: P-type (Boron), N-type (Phosphorus/Antimony)
  • Resistivity: 0.001–100 Ω·cm (CZ), wider ranges available
  • Orientation: 〈100〉, 〈111〉, 〈110〉
  • Oxygen: 12–18 ppma (ASTM F121), or customer-specified
  • Carbon: < 0.5 ppma (standard), < 0.1 ppma (low-carbon)
  • Lifetime: > 100 μs (standard), > 1000 μs (high-lifetime)

FZ Silicon Ingots

Float-zone refined ultra-high-purity silicon for power devices, detectors, and RF applications. Near-zero oxygen content with exceptional resistivity uniformity.

  • Diameter: 100mm–200mm (4″–8″)
  • Type: N-type (Phosphorus), P-type (Boron)
  • Resistivity: 1–10,000 Ω·cm (N-type), 1,000–20,000+ Ω·cm (P-type)
  • Oxygen: < 0.2 ppma
  • Carbon: < 0.1 ppma
  • Lifetime: > 1000 μs (standard), > 5000 μs (high-lifetime)
  • Ideal for: IGBTs, power MOSFETs, RF PIN diodes, radiation detectors

Compound Semiconductor Boules

GaAs Boules

LEC or VGF-grown semi-insulating or doped GaAs single-crystal boules for RF and optoelectronic device manufacturing.

  • Diameter: 2″–6″
  • SI-GaAs (ρ > 10⁷ Ω·cm), N-type, P-type
  • EPD: < 5×10³/cm² (LEC), < 500/cm² (VGF)
  • Full boule or cropped sections available

InP Boules

LEC-grown Fe-doped semi-insulating or sulfur-doped N-type InP single crystals for photonics and mmWave applications.

  • Diameter: 2″–4″
  • SI-InP (Fe-doped), N-type (S-doped)
  • EPD: < 5×10⁴/cm²
  • Boule lengths up to 200mm

SiC Boules

PVT-grown 4H-SiC and 6H-SiC single-crystal boules. Tight micropipe density control for power device-grade material.

  • Diameter: 100mm, 150mm
  • 4H-SiC: N-type, SI, V-doped SI
  • MPD: < 1/cm², premium < 0.1/cm²
  • Full boule or sliced sections

Bulk Wafer Supply Program

For customers who need finished wafers at volume but want the economics of bulk purchasing, our Bulk Wafer Supply Program offers significant pricing advantages:

Volume Discount Tiers

  • Tier 1: 25–100 wafers per lot
  • Tier 2: 101–500 wafers per lot
  • Tier 3: 501–2,000 wafers per lot
  • Tier 4: 2,001+ wafers per lot (custom pricing)

Program Benefits

  • Lot-level pricing with published discount structure
  • Reserved production capacity with scheduled deliveries
  • Dedicated account manager for large-volume accounts
  • Custom packaging and labeling to your specifications
  • Quarterly business reviews with continuous improvement

Supply Chain Services

  • Vendor-Managed Inventory (VMI) programs
  • Just-in-Time delivery with 48-hour lead time
  • Regional warehousing (Asia, Europe, North America)
  • Consignment stock arrangements available

Quality & Certification

Every ingot or boule ships with a comprehensive Certificate of Analysis including:

Axial Resistivity Profile — Full-length 4-point probe scan or eddy-current measurement
Radial Resistivity Map — Cross-sectional mapping at specified positions
Minority Carrier Lifetime — μ-PCD or QSSPC measurement
Crystal Orientation — X-ray Laue or XRD verification
Oxygen/Carbon Content — FTIR analysis per ASTM F121/F1391
Dislocation Density — EPD by preferential etching (ASTM F47)
Micropipe Density (SiC) — KOH etching or PL imaging
Visual Inspection — Surface quality, cracks, inclusions, twinning

Need Bulk Material for Your Production Line?

Tell us your material, diameter, type, and volume requirements — we'll provide a competitive quote including delivery schedule and certification details within 24 hours.

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