Coated Substrates
Pre-coated wafers with thermal oxide, LPCVD nitride, metal films, and dielectric stacks.
Overview
Coated substrates are a foundational input for a wide range of semiconductor and MEMS devices. GINECHIP provides comprehensive pre-coated wafer substrate services — thermal oxide, LPCVD/PECVD nitride, polysilicon, metal films, and dielectric multilayers — enabling custom film stacks on silicon, glass, and compound semiconductor substrates.
Each coated substrate ships with full film characterization data and material certification. Our deposition equipment spans thermal oxidation furnaces, LPCVD/PECVD reactors, and PVD sputter/evaporation systems, giving us the process flexibility to match tight thickness, stress, and uniformity targets across a wide range of substrate materials.
Available Coating Types
Thermal Oxide (SiO₂)
Dry- and wet-grown silicon dioxide for gate dielectrics, masking, and passivation, with tightly controlled thickness and refractive index.
- Dry: 10nm–300nm, Wet: 100nm–2μm
- Uniformity: ±2% within-wafer
- Refractive index: 1.46 @ 633nm
- Breakdown field: > 10 MV/cm
Low-Stress Silicon Nitride (Si₃N₄)
LPCVD-deposited nitride with low intrinsic stress and high KOH etch selectivity, ideal for MEMS membranes and diffusion masking.
- Thickness: 50nm–2μm
- Stress: < 100 MPa (low-stress nitride)
- Refractive index: 2.0 @ 633nm
- Etch selectivity to Si: > 500:1 in KOH
Polysilicon
Doped or undoped polysilicon films with tunable resistivity and grain size for gate electrodes, resistors, and MEMS structural layers.
- Thickness: 100nm–10μm
- Resistivity: 0.001–1000 Ω·cm (doped)
- As-deposited or annealed (stress control)
- Grain size: 20–100nm (deposition condition)
Metal Films & Stacks
Sputtered or evaporated Al, Au, Pt, and Ni multilayer stacks for wirebonding pads, ohmic contacts, and diffusion barriers.
- Al: 100nm–5μm (wirebonding)
- Ti/Au: 20/200nm–50/1000nm
- Cr/Au, Ti/Pt/Au, Ti/Ni/Au stacks
- Sheet resistance as specified per process
Distributed Bragg Reflector (DBR) Coatings
Multilayer dielectric stacks of alternating high/low-index materials engineered for greater than 99.9% reflectivity at a target wavelength.
- SiO₂/TiO₂, SiO₂/Ta₂O₅, SiO₂/Si₃N₄
- 3–50 layer pairs
- Reflectivity > 99.9% at design wavelength
- Custom spectral targets: 400nm–2μm
Parylene Conformal Coating
Pinhole-free, biocompatible parylene deposited by vapor-phase polymerization for hermetic, uniform coverage of complex geometries.
- Thickness: 0.5μm–50μm
- Dielectric constant: 2.65–3.15
- USP Class VI biocompatible
- No pinholes, true conformal coverage
Compatible Substrates
Silicon Wafers
Prime and test-grade Si wafers from 50mm to 300mm, available in any orientation and resistivity for coating.
Glass Substrates
Borosilicate, fused silica, and display-grade glass substrates for optical, MEMS, and microfluidic applications.
GaAs Substrates
Semi-insulating and n-type gallium arsenide wafers for RF, photonic, and optoelectronic device coating.
InP Substrates
Indium phosphide wafers for photonic and high-frequency device applications requiring precision film deposition.
Flexible & Polymer Substrates
Low-temperature-compatible coating processes for polyimide, PET, and other flexible substrate materials.
Sapphire Substrates
Al₂O₃ substrates coated for LED, optical window, and high-temperature electronic device applications.
Deposition Technologies
Thermal Oxidation
- Dry oxidation (O₂): Highest quality SiO₂ for gate dielectrics, 10nm–300nm
- Wet oxidation (H₂O vapor): Higher growth rate for thicker oxides, 100nm–2μm
- Chlorinated oxidation (TCA/TCE): Enhanced minority carrier lifetime for power devices
- Available on 100mm, 150mm, and 200mm Si wafers
LPCVD
- Si₃N₄: Low-stress recipe (< 100 MPa) for MEMS membranes
- Polysilicon: Doped or undoped, tunable grain size and stress
- TEOS SiO₂: Conformal oxide with excellent step coverage
- Batch processing for cost efficiency at volume
PECVD
- SiO₂: Low-temperature (< 400°C) oxide for post-metallization passivation
- Si₃N₄: Dielectric passivation with tunable stress (compressive to tensile)
- SiON, a-Si: Anti-reflection coatings, absorber layers
- High deposition rate, compatible with temperature-sensitive substrates
PVD
- DC/RF Magnetron Sputtering: Al, Ti, Au, Pt, Cr, Ni, Cu, ITO
- E-beam / Thermal Evaporation: High-purity metal films for lift-off processes
- Reactive Sputtering: TiN, TaN barrier/adhesion layers
- Shadow mask or full-wafer deposition
Quality Control
Each coated substrate undergoes rigorous quality control including film thickness mapping, uniformity verification, adhesion testing, and surface inspection per SEMI standards.
Ready to Get Started?
Contact our engineering team to discuss your specific requirements and receive a detailed quotation within 24 hours.