Gallium Nitride Epiwafers
GINECHIP supplies GaN-on-sapphire epiwafers from 2″ to 8″ with C-plane (0001) orientation, GaN epi layers of 2–8 μm, and UID, N-type Si, or P-type Mg doping. Growth by MOCVD, HVPE, and ELOG supports LED, power electronics, RF, and optoelectronic applications.
Overview
Gallium Nitride (GaN) on sapphire combines a direct bandgap of 3.4 eV with a high critical field of 3.3 MV/cm and a 2DEG electron mobility of 2,000 cm²/V·s.
Our GaN-on-sapphire epiwafers are available in 2″–8″ diameters with C-plane (0001) sapphire substrates, GaN epi thickness of 2–8 μm, and UID, N-type Si, or P-type Mg doping options.
XRD FWHM (0002) below 300 arcsec, dislocation density below 5×10⁸/cm², and an AlN buffer layer of 20–30 nm are included in all standard templates, with SEMI M12/M13 compliant laser marking.
Premium-grade GaN templates with dislocation density < 1×10⁸/cm² and XRD FWHM < 200 arcsec.
Epitaxial Growth Methods
We grow GaN-on-sapphire using MOCVD, HVPE, and ELOG to support different requirements for uniformity, thickness, and crystal quality.
MOCVD Production Grade
2″ – 8″ · High throughput · ±5% uniformity
MOCVD delivers high-volume GaN-on-sapphire epiwafers with 2″–8″ diameters, ±5% thickness uniformity, and dislocation density below 5×10⁸/cm² for production-grade consistency.
HVPE Specialty Grade
2″ – 4″ · 50–200 μm/hr growth rate
HVPE grows thick, free-standing and specialty GaN layers at 50–200 μm/hr with dislocation density below 1×10⁷/cm² for demanding device structures.
ELOG Laser-Grade
2″ – 4″ · < 5×10⁶/cm² · Multi-step process
ELOG reduces dislocation density below 5×10⁶/cm² through epitaxial lateral overgrowth, producing laser-grade templates for blue laser diode applications.
Growth Method Comparison
Compare MOCVD, HVPE, and ELOG to match your priority — production throughput, thick layers, or ultra-low dislocation density.
MOCVD — Production Choice
MOCVD delivers high-volume epiwafers with ±5% thickness uniformity and dislocation density below 5×10⁸/cm² for consistent production-grade quality.
HVPE — Thick & Specialty
HVPE grows thick or free-standing GaN layers at 50–200 μm/hr with dislocation density below 1×10⁷/cm² for demanding device structures.
ELOG — Laser-Grade
ELOG uses epitaxial lateral overgrowth to push dislocation density below 5×10⁶/cm² for laser-grade templates.
Material Comparison
Compare GaN with silicon (Si), GaAs, and 4H-SiC across bandgap, critical field, mobility, saturation velocity, and thermal performance.
| Parameter | GaN | Silicon (Si) | GaAs | 4H-SiC |
|---|---|---|---|---|
| Bandgap (eV) | 3.4 (direct) | 1.12 (indirect) | 1.42 (direct) | 3.26 (indirect) |
| Critical Field (MV/cm) | 3.3 | 0.3 | 0.4 | 2.8 |
| Electron Mobility (cm²/V·s) | 2,000 (2DEG) | 1,350 | 8,500 | 900 |
| Saturation Velocity (10⁷ cm/s) | 2.5 | 1.0 | 1.2 | 2.0 |
| Thermal Conductivity (W/m·K) | 130 (bulk) / 250 (SiC) | 150 | 55 | 490 |
| Max Operating Temp (°C) | > 500 | 150 | 200 | > 600 |
| JFOM (Johnson Figure of Merit) | 760 | 1 | 3 | 280 |
| BFOM (Baliga FOM, relative) | 650 | 1 | 15 | 130 |
Power Electronics with GaN
GaN's high critical field of 3.3 MV/cm and 2DEG mobility of 2,000 cm²/V·s deliver high-efficiency power switching with lower conduction and switching losses than silicon.
With a Johnson Figure of Merit of 760 and a Baliga Figure of Merit of 650 (relative to silicon = 1), GaN supports compact, high-frequency power converters for data centers, EV chargers, and renewable energy.
GaN-on-sapphire templates rated for high-voltage, high-temperature power device development.
Technical Specifications
| Parameter | Available Range / Values |
|---|---|
| Base Substrate | C-plane sapphire (0001), 430μm or 650μm thickness |
| GaN Epi Thickness | 2μm, 3.5μm, 5μm, 8μm (custom on request) |
| Doping Options | UID (unintentionally doped), N-type Si-doped, P-type Mg-doped |
| Dislocation Density | < 5×10⁸/cm² (typical); < 1×10⁸/cm² (premium grade) |
| Sheet Resistance | N-type: 300–800 Ω/sq; UID: > 10⁶ Ω/sq |
| Surface Roughness | Ra < 0.5nm (AFM 5×5μm scan) |
| Wafer Bow | ≤ 40μm (4″); ≤ 80μm (6″); ≤ 120μm (8″) |
| Available Diameters | 2″ (50.8mm), 4″ (100mm), 6″ (150mm), 8″ (200mm) |
| AlN Buffer Layer | 20–30nm, included in all standard templates |
| XRD FWHM (0002) | < 300 arcsec (typical); < 200 arcsec (premium) |
| XRD FWHM (10-12) | < 500 arcsec (typical); < 350 arcsec (premium) |
| GaN Bandgap | 3.4 eV (direct, wurtzite crystal structure) |
| Sapphire Thermal Expansion | 7.5×10⁻⁶/K (a-axis); 8.5×10⁻⁶/K (c-axis) at 300K |
| Sapphire Refractive Index | nₒ = 1.768, nₑ = 1.760 at 633nm |
| Backside Finish | As-cut, lapped, or polished per customer specification |
| Laser Mark | SEMI M12/M13 compliant: soft-mark on front or back side |
| Particle Count @ 0.3μm | ≤ 20 particles (laser surface scan) |
| Packaging | Vacuum-sealed single-wafer containers, Class 100 cleanroom |
| Compliance | SEMI Standards, RoHS, REACH |
Applications
LED Lighting & Displays
Wide direct bandgap (3.4 eV) supports efficient blue and UV LEDs for general lighting, backlights, and high-brightness displays.
Power Electronics
High critical field (3.3 MV/cm) and 2DEG electron mobility of 2,000 cm²/V·s enable high-efficiency, high-voltage power switching devices.
R&D Prototyping
Custom epi thicknesses (2–8 μm) and doping options (UID, Si, Mg) support rapid prototyping and process development.
RF Amplifiers
High saturation velocity (2.5×10⁷ cm/s) supports high-frequency, high-power RF amplifiers for base stations and radar.
Sensors & Detectors
GaN's wide bandgap and thermal stability enable robust sensors and detectors for harsh environments.
Satellite & Aerospace
High-temperature operation (above 500 °C) and radiation tolerance suit satellite and aerospace power systems.
Quality & Certification
GINECHIP GaN-on-sapphire epiwafers are produced under ISO 9001:2015 with 100% inspection, SEMI M12/M13 compliant laser marking, and RoHS/REACH compliance.
Get GaN-on-Sapphire Epiwafers
Send us your epi thickness, doping, and diameter requirements and our team will respond with a tailored quote.