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Stat Value 1Technology
Stat Value 2Resolution
Stat Value 3Capacity
Stat Value 4Certification

Overview

A comprehensive overview of our capabilities and services.

We deliver industry-leading quality and precision.

H 2Platforms

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Substrate: SOI (220nm Si / 2μm BOX)Waveguide loss: < 1 dB/cmModulator: Mach-Zehnder, ringPhotodetector: Ge-on-SiWavelength: O-band, C-bandDiameters: 200mm, 300mm

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Substrate: InP (S.I. or N-type)DFB/DBR lasers: 1.3–1.6μmSOA: 20+ dB gainEAM: 40+ GHz bandwidthAWG: 40–96 channelDiameters: 2″, 3″, 4″

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Si₃N₄ thickness: 100–800nmLoss: < 0.1 dB/cm (visible/IR)Power handling: > 1W (CW)Nonlinear: Kerr comb generationCladding: SiO₂ (TEOS or thermal)Diameters: 100mm, 150mm, 200mm

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Substrate: GaAs (N-type, 6″)Wavelength: 808nm, 850nm, 940nmDBR: 20–40 pairs AlGaAs/GaAsQW: InGaAs or GaAs/AlGaAsPower: mW to multi-Watt arraysEpi-ready or patterned substrates

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LNOI: 300–700nm LiNbO₃ filmr₃₃ = 30.8 pm/VModulator BW: 100+ GHzVπ·L < 2 V·cmHandle: LiNbO₃ or SiDiameters: 3″, 4″, 6″

H 2Lidar

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Substrate: GaAs 6″Wavelength: 905nm, 940nmPeak power: 50–500W (array)Pulse width: 1–10nsRep rate: 100kHz–2MHzEpi: MOCVD-grown DBR + QWs

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Substrate: InP, SOI (SiPh)Wavelength: 1530–1570nmFiber laser: Er-dopedPulse energy: μJ to mJRange: 200–500m+Coherent detection (FMCW)

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Substrate: Si (specialty epi)Pixel pitch: 10–50μmTiming jitter: < 100ps FWHMPDE: 20–40% (905nm)Array size: 64×64 to 512×512CMOS-compatible process

H 2Soi Specs

ParameterTbl StandardTbl Advanced
Tbl Device Layer220nm ± 5nm220nm ± 2nm (or custom)
Tbl Box Layer2.0μm ± 5%2.0μm ± 2% (or 3.0μm)
Tbl Handle725μm Si (100)725μm HR-Si (>1kΩ·cm)
Tbl Si Uniformity< 2nm (1σ)< 1nm (1σ)
Tbl Box Uniformity< 1% (1σ)< 0.5% (1σ)
Tbl Diameter200mm200mm, 300mm
Tbl Roughness< 0.2nm RMS< 0.15nm RMS
Tbl Particles< 20 @ 0.12μm< 10 @ 0.09μm

Table Note

H 2Applications

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H 2Waveguide

Silicon and silicon nitride waveguide platforms available with propagation losses as low as 0.5 dB/cm. Single-mode and multi-mode waveguide designs supported. Our photolithography and etching processes achieve vertical sidewalls with roughness below 5nm RMS for low scattering loss.

H 2Epi Quality

Epitaxial layers are characterized by photoluminescence mapping, X-ray diffraction rocking curve analysis, and surface defect density measurement. We guarantee epi-layer uniformity within 2% across the entire wafer, with RMS surface roughness below 0.2nm.

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