Photonics LiDAR
Silicon photonics, VCSEL arrays, waveguide substrates, and LiDAR transmit/receive wafers.
Overview
Photonics and LiDAR are core technologies for next-generation sensing and data communication. GINECHIP offers a full range of photonic and LiDAR substrate solutions, spanning silicon photonics SOI wafers, InP photonic integrated circuit substrates, GaAs VCSEL arrays, and Si₃N₄ waveguide substrates — supporting applications from data center optical interconnects to autonomous-driving LiDAR.
We deliver industry-leading quality and precision — every photonics substrate is rigorously verified for surface quality and optical performance.
Material Platforms
Silicon Photonics (SOI)
Silicon-on-insulator photonic platform with sub-1dB/cm waveguide loss, integrated Mach-Zehnder and ring modulators, and Ge-on-Si photodetectors for O-band and C-band transceivers.
Indium Phosphide (InP) Photonics
Monolithic InP platform integrating DFB/DBR lasers, semiconductor optical amplifiers, and high-speed electro-absorption modulators for active photonic components spanning 1.3–1.6μm.
Silicon Nitride (Si₃N₄) Photonics
Ultra-low-loss silicon nitride waveguides support high-power CW operation and Kerr comb generation, ideal for narrow-linewidth lasers, sensing, and nonlinear photonics.
GaAs VCSEL & Laser Diode Platform
GaAs-based epitaxial platform for 808–940nm VCSELs and edge-emitting lasers, with AlGaAs/GaAs DBR mirrors and InGaAs quantum wells for illumination and lidar emitters.
Lithium Niobate on Insulator (LNOI)
Thin-film lithium niobate platform delivering over 100GHz modulation bandwidth and low Vπ·L, enabling next-generation electro-optic modulators for coherent optical communications.
LiDAR Technology
Direct Time-of-Flight (Flash) Lidar
GaAs-based pulsed laser arrays combined with MOCVD-grown DBR and quantum-well epitaxy deliver 50–500W peak power for automotive and industrial flash lidar illuminators.
FMCW Coherent Lidar
InP and silicon photonics platforms enable frequency-modulated continuous-wave lidar with coherent detection, extending range beyond 200–500m while providing instantaneous velocity data.
SPAD / dToF Detector Arrays
CMOS-compatible single-photon avalanche diode arrays on specialty silicon epitaxy achieve sub-100ps timing jitter for direct time-of-flight ranging in compact receiver modules.
SOI Specifications
| Parameter | Standard Spec | Advanced Spec |
|---|---|---|
| Device Layer Thickness | 220nm ± 5nm | 220nm ± 2nm (or custom) |
| BOX Layer Thickness | 2.0μm ± 5% | 2.0μm ± 2% (or 3.0μm) |
| Handle Wafer | 725μm Si (100) | 725μm HR-Si (>1kΩ·cm) |
| Si Layer Uniformity | < 2nm (1σ) | < 1nm (1σ) |
| BOX Uniformity | < 1% (1σ) | < 0.5% (1σ) |
| Diameter | 200mm | 200mm, 300mm |
| Surface Roughness | < 0.2nm RMS | < 0.15nm RMS |
| Particle Count | < 20 @ 0.12μm | < 10 @ 0.09μm |
Specifications above are based on standard products. Custom specifications available upon request.
Applications
Solid-state lidar and photonic sensors provide the range and angular resolution required for L2+ driver assistance and autonomous vehicle perception stacks.
Compact lidar and photonic sensing modules enable obstacle avoidance, SLAM navigation, and precision metrology for mobile robots and factory automation.
Silicon and InP photonic integrated circuits power 100G–800G optical transceivers for data center interconnects and long-haul telecom networks.
VCSEL arrays and photonic structures support depth sensing, eye tracking, and structured-light projection in augmented and virtual reality devices.
Photonic integrated circuits enable compact spectroscopy, gas sensing, and point-of-care diagnostics through waveguide-based optical sensing platforms.
Radiation-tolerant photonic and lidar components support free-space optical communication, targeting, and remote sensing in aerospace and defense systems.
Waveguide Technology
Silicon and silicon nitride waveguide platforms available with propagation losses as low as 0.5 dB/cm. Single-mode and multi-mode waveguide designs supported. Our photolithography and etching processes achieve vertical sidewalls with roughness below 5nm RMS for low scattering loss.
Epitaxial Quality
Epitaxial layers are characterized by photoluminescence mapping, X-ray diffraction rocking curve analysis, and surface defect density measurement. We guarantee epi-layer uniformity within 2% across the entire wafer, with RMS surface roughness below 0.2nm.
Ready to Get Started?
Contact our engineering team to discuss your specific requirements and receive a detailed quotation within 24 hours.