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9N–11N Purity
100–450mm Diameter
CZ/MCZ/FZ Growth Method
0.001–10,000+ Ω·cm Resistivity Range
In Stock & Pre-Order Silicon Ingot Sales Now Live Silicon Ingot Shop — Batch Supply by GINECHIP
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Bulk Silicon Ingot Supply

GINECHIP supplies CZ, MCZ, FZ & polycrystalline silicon ingotsAvailable for diameters 100–450 mm and purity 9N–11N (N / P / intrinsic). Ingot length ranges from 200–2000 mm, with full CoA and conformity to <strong>SEMI standards</strong>.

Polycrystalline solar-grade silicon ingots (6N–7N) for cost-efficient photovoltaic production. Single-crystal silicon ingots support <strong>logic, memory, power</strong> and <strong>RF</strong> devices. N-type (P/As/Sb), P-type (B), and intrinsic FZ are available.

Every silicon ingot includes a complete CoA, crystal quality data, and traceability records; custom ingot lengths and specifications are available on request.

Growth Methods

We supply silicon ingots produced by four mainstream technologies: <strong>CZ</strong>, <strong>MCZ</strong>, <strong>FZ</strong>, and <strong>polycrystalline</strong>. Each route offers different trade-offs in cost, purity, and oxygen content, helping you select the most suitable material for your process and device requirements.

Industry Standard

CZ (Czochralski)

Most widely used growth method

Diameter 100mm – 450mm
O₂ Content 12 – 18 ppma
Resistivity 0.001 – 100 Ω·cm
Cost $ – $$

CZ (Czochralski) growth is a widely adopted method for producing silicon ingots with strong process maturity. It enables reliable control of key crystal parameters while supporting large-scale manufacturing. Choose CZ when you need <strong>proven yield and broad availability</strong> for wafer production.

Controlled O₂ Content

MCZ (Magnetic CZ)

Oxygen incorporation is tunable

Diameter 150mm – 300mm
O₂ Content 6 – 12 ppma
Resistivity 0.01 – 200 Ω·cm
Cost $$ – $$$

MCZ (Magnetic Czochralski) growth delivers tighter oxygen management compared with conventional CZ. By using magnetic fields during growth, it helps tailor oxygen incorporation and support stable crystal quality. Ideal when you need <strong>controlled oxygen levels for device requirements</strong> at scale.

Highest Purity

FZ (Float Zone)

No crucible-contact pollution

Diameter 100mm – 200mm
O₂ Content < 0.1 ppma
Resistivity 1 – 10,000+ Ω·cm
Cost $$$ – $$$$

FZ (Float Zone) growth produces silicon without the typical crucible contact, helping minimize <strong>container-related contamination</strong>. This approach supports very low oxygen levels and high electrical resistivity for applications that demand stringent purity. Choose FZ when ultra-low contamination and maximum electrical performance matter.

Method Comparison

Choose the growth method based on your target device and manufacturing priorities: <strong>cost-focused</strong> selection with CZ, <strong>low-oxygen</strong> requirements with MCZ, and <strong>ultra-high purity</strong> needs with FZ.

CZ (Czochralski) — 100–450mm

Mature, widely adopted process with <strong>Oxygen content: 12–18 ppma</strong> and <strong>Resistivity: 0.001–100 Ω·cm</strong>. Ideal for high-volume production of <strong>logic and power devices</strong>.

Best for: Logic / Memory / Power Oxygen content (O₂): 12–18 ppma

FZ Float-Zone Silicon Ingots (100–200mm)

FZ (floating zone) grows silicon <strong>without a crucible</strong>, enabling <strong>the highest purity</strong> and excellent material quality for demanding processes.

Ultra-high purity needs where maximum cleanliness is critical. O₂: < 0.1 ppma

Multicrystalline Silicon Ingot

Batch supply of <strong>multicrystalline silicon ingots</strong> made by casting. Suitable for solar-grade applications and high-purity requirements with <strong>polycrystalline purity 6N–7N</strong>.

Featuring <strong>156mm × 156mm square ingots</strong>, this product delivers strong cost performance for multicrystalline wafer production—ideal when you want <strong>cost advantage</strong> in planning.

Yield & Economics

The table below summarizes typical <strong>wafer yield estimates</strong> by ingot diameter, including <strong>saw kerf loss</strong>.

Use these estimates to align production planning with expected wafer counts per 10 cm and per full ingot, while accounting for <strong>saw kerf loss</strong> (180–200 μm, 160–180 μm, 140–160 μm depending on diameter).

Ingot diameterWafer count per 10 cmWafer count per full ingotSaw kerf loss
150mm (6″) ~66 ~1,300 180 – 200 μm
200mm (8″) ~49 ~1,000 180 – 200 μm
300mm (12″) ~33 ~660 160 – 180 μm
450mm (18″) ~22 ~440 140 – 160 μm

Solar-grade vs Semiconductor-grade

Choose the right silicon ingot for your process—high-purity <strong>semiconductor-grade</strong> for ICs, or cost-effective <strong>solar-grade</strong> for PV.

Semiconductor-grade (Semiconductor-grade silicon)

9N–11N high-purity silicon ingots designed for <strong>IC</strong> applications, with low defects via <strong>Dash</strong> technology.

Purity: 9N–11N No dislocations / Dash

Solar-grade poly-crystalline

Cast poly-crystalline solar silicon ingots—<strong>value</strong> focused for cost-effective PV manufacturing.

Purity: 6N–7N Bar: 156mm×156mm

Quality & Certifications

Bulk sales with traceable documentation—ISO 9001:2015, aligned with SEMI standards, and delivered with <strong>CoA for each ingot</strong>.

FTIR gap oxygen & carbon Measures interstitial oxygen and carbon content using FTIR.
Four-point probe resistivity map Maps resistivity distribution by four-point probe measurement.
FZ minority carrier lifetime Tests FZ minority carrier lifetime to confirm >1,000 μs.
XRD dislocation density analysis Uses X-ray diffraction to analyze dislocation density.
Surface defect inspection & scan Performs visual inspection and scanning to detect surface defects.
Diameter & length geometry metrology Verifies diameter, length, and flat alignment for each ingot.
Etch pit density (EPD) Measures etch pit density (EPD) to evaluate defect-related parameters.
CoA & batch traceability Provides full CoA documentation and batch traceability for each shipment.

Technical Specifications

ParameterSpecification
Growth Method CZ (Czochralski), MCZ (Magnetic CZ), FZ (Float Zone), Multicrystalline (cast)
Diameter 100mm, 125mm, 150mm, 200mm, 300mm, 450mm
Length 200mm – 2000mm, custom lengths available
Dopant / Type N-type (P, As, Sb), P-type (B), Intrinsic (FZ)
Resistivity 0.001 – 10,000+ Ω·cm, application-dependent
Crystal Orientation 〈100〉, 〈111〉, 〈110〉, off-cut available
Purity 9N – 11N (CZ/FZ), 6N – 7N (multicrystalline)
Oxygen Content CZ: 12 – 18 ppma, MCZ: 6 – 12 ppma, FZ: < 0.1 ppma
Carbon Content CZ: ≤ 0.1 ppma, FZ: < 0.05 ppma
Lifetime FZ: > 1,000 μs minority carrier lifetime
Dislocation Density CZ: dislocation-free (Dash technique), Multi: 10³ – 10⁶/cm²
Ingot Shape Cylindrical, square (156mm × 156mm for solar), rectangular
Edge Rounding Ground, etched, as-cut
Surface Finish As-grown, ground, etched, polished crown
Packaging Wooden crate, foam-lined, vacuum-sealed, shock-resistant

Application Areas

🧠

AI Chips

High-purity CZ/FZ silicon ingots for stable wafer production and reliable performance in <strong>AI and neural network accelerators</strong>. Suitable across resistivity ranges from 0.001 to 10,000+ Ω·cm.

⚡

Power Devices

Silicon ingots designed for power semiconductor manufacturing, supporting <strong>power management and power electronics</strong> requirements. Available in CZ/FZ 9N–11N and poly 6N–7N purity.

☀️

Solar PV

156mm×156mm solar-grade silicon ingots for photovoltaic cell production. Supports design flexibility across <strong>0.001–10,000+ Ω·cm</strong> resistivity ranges.

⚙️

MEMS

Silicon ingots for MEMS sensor and actuator fabrication, enabling consistent wafer quality for <strong>micromachined devices</strong>. CZ/FZ and poly purity options support process needs.

〰️

RF/Analog

High-purity silicon ingots support RF and analog wafers with stable electrical performance across a wide resistivity range.

📡

Comms Equipment

Silicon ingots for communication devices help enable reliable wafer fabrication for 5G and general transceiver applications.

🔬

Scientific Instruments

For detector and precision measurement wafers, high-purity silicon provides a strong foundation for performance and repeatability.

💡

LED & Optoelectronics

Silicon ingots can serve LED and optoelectronic device manufacturing, supporting consistent wafer processing for light-emitting and photodetector applications.

Bulk Pricing

High volume = better value. Quantity-based pricing is negotiable with a short lead time.

Polysilicon Ingot (Multi-Crystalline)

Solar-grade material with <strong>the lowest unit price</strong>, optimized for cost efficiency.

Purity: 6N–7N Size: 156mm × 156mm square ingot

FZ Silicon Ingot

Highest purity choice for <strong>high-end</strong> applications, designed for demanding manufacturing.

Purity: 9N–11N | O₂: <0.1 ppma Cost: $$$–$$$$

Supply Chain & Lead Time

Stable supply backed by capacity planning for bulk silicon ingot needs—designed to support continuous production schedules.

Careful logistics and protection: wood crate, foam, vacuum sealing, and anti-vibration handling are available to safeguard material integrity.

Transparent lead time support with inventory coordination, helping you plan procurement with confidence for production continuity.

Need custom dimensions or specific specs? We'll help match your requirements and coordinate the right supply plan.

Bulk demand? Request a quote

Tell us your quantity, destination, and packaging preference—we'll respond with lead-time and pricing options for silicon ingot bulk orders.

ISO 9001:2015 SEMI M1–M13 Each ingot complete CoA RoHS / REACH