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Overview
Semiconductor substrate selection is the foundation of device performance. Whether you are designing a MEMS inertial sensor, a GaN power amplifier, a silicon photonic transceiver, or an advanced 2.5D package, the choice of substrate material, wafer size, crystal orientation, resistivity, and surface quality directly determines yield, reliability, and electrical performance.
Ginechip supplies a comprehensive range of engineered substrates across the full semiconductor application spectrum — from standard silicon wafers for high-volume CMOS to exotic III-V compound semiconductors for niche photonics and RF applications. Every substrate is sourced from qualified manufacturers, inspected to your specification, and delivered with full material traceability. Our application engineering team helps you navigate material selection, process compatibility, and supply chain strategy so you can focus on device innovation.
Industries
MEMS & Sensors
Silicon, SOI, glass, and piezoelectric substrates for inertial sensors, pressure sensors, microphones, micro-mirrors, and bio-MEMS. DRIE and wafer bonding compatible. Hermetic packaging support. Available in 100mm–200mm diameters.
Si, SOI, Glass, Piezo100mm–200mmDRIE & Bonding-readyHermetic packaging
RF & Power Devices
High-resistivity silicon, GaAs, and GaN-on-Si/SiC substrates for RF switches, power amplifiers, LNAs, and mmWave front-end modules. Low loss tangent. mmWave compatible. Available in 50mm–200mm diameters.
HR-Si, GaAs, GaN-on-Si/SiC50mm–200mmLow loss tangentmmWave compatible
Photonics & LiDAR
SOI, InP, LiNbO₃, and SiO₂ substrates for silicon photonics, optical transceivers, LiDAR beam steering, and photonic integrated circuits. BOX thickness from 0.5μm to 3μm. Optical-grade polish. Available in 100mm–300mm.
SOI, InP, LiNbO₃, SiO₂100mm–300mmBOX: 0.5μm–3μmOptical-grade polish
Power Electronics (SiC/GaN)
SiC (4H, 6H) and GaN-on-Si substrates for MOSFETs, Schottky diodes, and HEMTs. Micropipe density < 1/cm². High-temperature stable. Available in 100mm–200mm diameters.
SiC (4H, 6H), GaN-on-Si100mm–200mmMicropipe density < 1/cm²High-temp stable
Advanced Packaging
Silicon and glass interposers for 2.5D/3D integration. TSV from 5μm to 100μm. 300mm compatible. FOWLP carriers. Fine-pitch RDL and microbump compatible substrates.
Si & Glass interposersTSV: 5μm–100μm300mm compatibleFOWLP carriers
R&D & Prototyping
Fragment to full wafer supply for research and prototyping. No minimum quantity. Custom stacks available. Academic pricing. Technical consultation included.
Fragment to full waferNo minimum quantityCustom stacks availableAcademic pricing
Solutions
Fab-to-Fab Supply
Multi-source qualification, consignment inventory, JIT delivery, and supply chain analytics for high-volume semiconductor manufacturing. Reduce single-source risk.
Multi-source qualificationConsignment inventoryJIT deliverySupply chain analytics
Research Institution Support
Academic pricing tiers, technical consultation, non-standard materials sourcing, and grant proposal support for universities and research laboratories.
Academic pricing tiersTechnical consultationNon-standard materialsGrant support
Startup & Prototyping Kits
Pre-curated wafer sets for rapid prototyping. Rapid sampling, NPI acceleration, and startup-friendly commercial terms. Reduce time-to-first-silicon.
Pre-curated wafer setsRapid samplingNPI accelerationStartup-friendly terms
Application Selection Guide
Choosing the right substrate for your application requires balancing material properties, process compatibility, volume requirements, and budget. Below are answers to the most common questions our application engineers address when helping customers select substrates.
Q1What substrate material is best for my MEMS device?
It depends on your transduction mechanism and process flow. Silicon (CZ) is the default for most surface and bulk micromachined MEMS. SOI wafers provide a precise device layer for DRIE-defined structures with inherent electrical isolation. Glass wafers (Borofloat®, fused silica) are preferred for anodic bonding and optical MEMS. Piezoelectric materials like AlN or PZT on silicon are common for BAW/SAW devices. Our engineers can recommend the optimal substrate stack based on your design requirements.
Q2How do I choose between GaN-on-Si and GaN-on-SiC?
GaN-on-SiC is preferred for high-frequency (> 3 GHz), high-power RF applications such as 5G base station power amplifiers and radar, due to SiC's 3× higher thermal conductivity (490 W/m·K vs 150 W/m·K for Si). GaN-on-Si is more cost-effective and dominates power conversion applications (fast chargers, data center PSUs, motor drives) where switching frequencies are below 1 MHz. For RF below 6 GHz at moderate power, GaN-on-Si can be sufficient. We supply both and can help you evaluate the cost-performance trade-off.
Q3What wafer diameter should I use for my application?
100mm and 150mm are the workhorse diameters for MEMS, compound semiconductors, and R&D — offering the widest equipment compatibility and lowest substrate cost per development cycle. 200mm is standard for high-volume CMOS, power devices, and advanced MEMS production. 300mm is required for leading-edge logic, memory, and some advanced packaging applications. The choice depends on your fab equipment set, volume requirements, and cost targets. Our team can help you evaluate the total cost of ownership for each diameter.
Q4What surface finish do I need for epitaxial growth?
For epitaxial growth (MOCVD, MBE, LPE), you need epi-ready wafers with Ra < 0.5 nm surface roughness, haze-free as verified by laser inspection, and native oxide desorption capability. CMP-polished wafers meet this requirement. For Si epitaxy, hydrogen baking at > 1100°C is standard for oxide removal. For III-V epitaxy, epi-ready with controlled native oxide is critical. We supply epi-ready wafers with certificates of surface quality including AFM roughness maps.
Q5Can I get substrates with custom resistivity specifications?
Yes. We offer custom resistivity targeting for silicon wafers from < 0.001 Ω·cm (heavily doped) to > 10,000 Ω·cm (high-resistivity FZ). For standard products, we guarantee within-wafer uniformity < ±3% and lot-to-lot consistency < ±5%. For custom specifications, we can achieve < ±1% within-wafer uniformity and < ±2% lot-to-lot through coordinated ingot selection and metrology verification. Four-point probe and eddy current maps are provided with each order.
Q6What documentation and certifications do you provide?
Every order includes an ISO 9001:2015 Certificate of Conformance, lot traceability report tracing back to the ingot or boule, full metrology data package (resistivity map, thickness profile, TTV/bow/warp, surface roughness, particle count), and a packing list with storage conditions. On request, we provide SEMI Standards compliance statements, RoHS declarations, conflict minerals reporting templates (CMRT), REACH declarations, and ITAR registration documentation for defense-related procurements. All data files are provided in standard electronic formats (CSV, PDF).
Need help selecting a substrate?
Our application engineers will review your requirements and recommend the optimal substrate material, size, and specification for your device — at no cost.
ISO 9001:2015 Full Lot Traceability SEMI Standards Global Logistics