Indium Phosphide Wafers
GINECHIP supplies InP wafers with 2″–4″ diameters, controlled doping (N-type S/Sn, P-type Zn, SI Fe-doped), and production-ready surfaces for epitaxy. Orientations (100), (111)A, and (111)B with off-cut 2° or 3° are available with growth by VGF/LEC.
Overview
Indium Phosphide (InP) is a compound semiconductor with a direct bandgap of 1.344 eV and high electron mobility of 5,400 cm²/V·s.
Choose substrate options including SI Fe-doped (>10⁷ Ω·cm), N-type S or Sn, and P-type Zn; available orientations are (100), (111)A, and (111)B with off-cut 2° or 3° toward (110) and diameters of 2″–4″.
Epi-Ready surfaces target RMS <2Å for strong epitaxy readiness, with compliance to SEMI M1–M13 plus RoHS and REACH.
Epi-Ready InP substrates with EPD down to <5×10³/cm² (advanced grade).
Crystal Growth Methods
We grow InP using VGF and LEC techniques to support different requirements for quality and epitaxy readiness.
VGF Prime
Best yield & quality
VGF (Vertical Gradient Freeze) InP is designed for low dislocation density and high resistivity. It offers the best yield and quality for photonic and laser substrate applications, with EPD controlled in the <5×10³–5×10⁴/cm² range.
LEC Volume
Mature volume production
LEC (Liquid-Encapsulated Czochralski) InP is optimized for mature volume production and stable process control. It is a strong fit for larger-diameter wafers, with EPD typically in the 5×10⁴–1×10⁵/cm² range for good overall volume performance.
Growth Method Comparison
Compare VGF, LEC, and emerging VCZ to match your priority, whether it is EPD performance, resistivity targeting, or overall yield for epi applications.
VGF — Best for Photonics & Lasers
VGF helps deliver low EPD, high resistivity, and strong yield, supporting epi-ready InP requirements for advanced device manufacturing.
LEC Volume Production
LEC provides mature volume production for larger InP wafer diameters, supporting scalable manufacturing.
Emerging: VCZ Process
Vapor-pressure-controlled Czochralski (VCZ) is emerging for InP wafers with lower In-vacancy density, supporting next-generation photonic and electronic device requirements.
Photonics & Laser Applications
Indium Phosphide has a direct bandgap of 1.344 eV, enabling efficient light emission for laser diodes and photonic integrated circuits at telecom wavelengths of 1310 nm and 1550 nm.
InP wafers support DFB lasers, tunable lasers, and EMLs (electro-absorption modulated lasers) used in data centers, 5G optical transport, and coherent optical networks.
On-chip photonic integration combines lasers, modulators, waveguides, and photodetectors on a single InP chip for compact, high-speed optical modules.
High electron mobility of 5,400 cm²/V·s and low optical loss make InP the substrate of choice for 800G and 1.6T optical transceivers.
mmWave & High-Speed Electronics
InP HEMTs and HBTs deliver the highest gain and efficiency at mmWave frequencies for 5G/6G, radar, and satellite communications.
InP wafers enable THz-capable devices and ultra-high-speed mixed-signal circuits, with fT/fmax beyond 300 GHz.
InP for 5G/6G, radar & satellite — fT/fmax beyond 300 GHz
Technical Specifications
| Parameter | Available Range / Values |
|---|---|
| Diameter | 2″ (50.8mm), 3″ (76.2mm), 4″ (100mm) |
| Dopant Type | N-type S-doped, N-type Sn-doped, SI Fe-doped, P-type Zn-doped |
| Resistivity | N-type: 10⁻³–10⁻¹ Ω·cm; SI Fe-doped: > 10⁷ Ω·cm |
| Crystal Orientation | (100), (111)A, (111)B, off-cut 2° or 3° toward (110) |
| Thickness | 350μm, 500μm, 625μm standard (custom on request) |
| Surface Polish | SSP, DSP, Epi-Ready — RMS < 2Å (AFM 5×5μm) |
| EPD (Etch Pit Density) | < 5×10⁴/cm² (prime); < 5×10³/cm² (advanced grade) |
| TTV / Bow / Warp | TTV < 5μm, Bow < 10μm, Warp < 15μm |
| Electron Mobility (μₑ) | 5,400 cm²/V·s (N-type InP at 300K) |
| Bandgap | 1.344 eV (direct, zincblende structure) |
| Thermal Conductivity | 68 W/m·K at 300K |
| Growth Methods | VGF (Vertical Gradient Freeze), LEC (Liquid-Encapsulated Czochralski) |
| Backside Treatment | Etched, polished, or laser-marked per customer specification |
| Laser Mark | SEMI M12/M13 compliant: soft-mark on front or back side |
| Flat Configuration | Per SEMI M1: EJ or US standard flat per diameter |
| Particle Count @ 0.3μm | ≤ 10 particles (laser surface scan) |
| Packaging | Vacuum-sealed, single-wafer shippers, Class 100 cleanroom |
| Compliance | SEMI M1–M13, RoHS, REACH |
Applications
Optical Communications
InP lasers and photodetectors power high-speed optical networks, from data centers to submarine cables.
Photodetectors & Imaging
InP photodetectors deliver high responsivity and low dark current for telecom, sensing, and imaging applications.
High-Frequency Electronics
High electron mobility of 5,400 cm²/V·s supports HBT and HEMT devices for high-speed digital and analog circuits.
Photonic Integrated Circuits
On-chip integration of lasers, modulators, and waveguides enables compact PICs for next-generation optical modules.
R&D & Quantum Photonics
Research-grade InP substrates support quantum photonics, entangled-photon sources, and advanced epitaxy development.
Satellite & Aerospace
Radiation-tolerant InP optoelectronics support satellite laser communication and aerospace systems.
Quality & Certification
GINECHIP InP wafers are produced under ISO 9001:2015 with 100% inspection, and available to match SEMI M1–M13 standards as well as RoHS/REACH requirements.
Request an InP Quote
Share your custom specifications and we will prepare a quote. Send your requirements to our team for a fast response.