Germanium Wafers
GINECHIP supplies germanium wafers in 50–200 mm diameters with controlled doping (N-type Sb, P-type Ga, Intrinsic), Epi-Ready surfaces, and low EPD for infrared optics, photovoltaics, and high-speed electronics.
Germanium Substrate Overview
Germanium (Ge) is a group IV semiconductor with an indirect bandgap of 0.66 eV and high electron mobility of 3,900 cm²/V·s, making it ideal for infrared optics and high-speed electronics.
Choose from N-type (Sb), P-type (Ga), or Intrinsic (undoped) grades with diameters of 50–200 mm, orientations (100), (111), and (110), and surface finishes from SSP/DSP to Epi-Ready with RMS <2Å.
5N+ purity, EPD < 5×10³/cm², and Epi-Ready surfaces for demanding IR and epitaxy applications.
Crystal Growth Methods
We grow germanium using Czochralski (CZ) and VGF techniques to support different requirements for crystal quality, diameter, and production efficiency.
Czochralski (CZ)
CZ growth is the standard for high-volume germanium production, delivering large-diameter ingots up to 200 mm with uniform doping and stable quality for optics and electronics.
VGF Growth
VGF (Vertical Gradient Freeze) offers lower dislocation density and improved homogeneity for specialty substrates used in epitaxy and high-performance applications.
Infrared Transmission
Germanium transmits over a broad 2–14 μm range with a refractive index of approximately 4.0, making it one of the most widely used materials for infrared optics.
High index and low dispersion enable compact lens designs for thermal imaging, FLIR systems, and CO₂ laser optics at 10.6 μm.
- 2–14 μm transmission window covering MWIR and LWIR bands.
- High index (n ≈ 4.0) enables compact, high-efficiency optical systems.
- ~47% two-surface transmission, limited only by Fresnel reflection (uncoated).
- AR coatings (including DLC) available for enhanced transmission and durability.
IR Transmission by Wavelength Band
| Wavelength Range | Transmission | Band |
|---|---|---|
| 2.0 – 3.0 μm | ~47% (two-surface reflection limited) | Mid-Wave Short |
| 3.0 – 5.0 μm | ~47% (intrinsic transparency) | Mid-Wave Window |
| 8.0 – 12.0 μm | ~47% (intrinsic transparency) | Long-Wave Window |
| 10.6 μm | ~47% (CO₂ laser line) | CO₂ Laser Line |
| 12.0 – 14.0 μm | > 40% (multiphonon edge begins) | Extended Long-Wave |
Values are typical for uncoated double-side polished substrates; AR-coated optics can exceed 97% transmission.
Solar Cells & Photovoltaics
Germanium is the substrate of choice for multi-junction III-V solar cells, with a 0.66 eV bandgap that complements GaAs and InGaP junctions for maximum conversion efficiency.
Space-grade germanium delivers the low EPD, precise orientation, and thermal stability required for satellite power systems.
Germanium wafers also support terrestrial concentrator photovoltaics (CPV) with proven reliability and production scalability.
SiGe & High-Speed Electronics
Silicon-germanium (SiGe) epitaxy on germanium substrates enables heterojunction bipolar transistors (HBTs) with fT/fmax beyond 500 GHz for high-speed digital and RF applications.
Ge and germanium-on-insulator (GOI) platforms continue to enable advanced CMOS and photonic integrated circuits for next-generation computing and optical interconnects.
Radiation Detection
High-purity germanium (HPGe) provides outstanding energy resolution for gamma-ray spectroscopy, making it the reference material for nuclear physics and radiation monitoring.
Germanium supports lithium-drifted Ge(Li) and planar detectors used in security scanning, medical imaging, and environmental monitoring.
Technical Specifications
| Parameter | Available Range / Values |
|---|---|
| Material | Single-crystal Germanium (Ge), 5N+ purity |
| Diameter | 50mm, 100mm, 150mm, 200mm |
| Dopant / Type | N-type (Sb-doped), P-type (Ga-doped), Intrinsic (undoped) |
| Resistivity | N-type: 0.01–40 Ω·cm, P-type: 0.01–30 Ω·cm, Intrinsic: > 40 Ω·cm |
| Orientation | (100), (111), (110), off-cut ±0.5° |
| Thickness | 200μm–1000μm, standard SEMI thicknesses |
| Surface Polish | SSP, DSP, Epi-Ready, RMS < 2Å |
| EPD (Etch Pit Density) | < 5×10³/cm² |
| TTV / Bow / Warp | TTV < 5μm, Bow < 15μm, Warp < 20μm |
| Bandgap | 0.66 eV (indirect) |
| Electron Mobility | 3,900 cm²/V·s |
| Hole Mobility | 1,900 cm²/V·s |
| IR Transmission Range | 2–14μm, n ≈ 4.0 |
| Refractive Index | 4.003 @ 10.6μm (CO₂ laser wavelength) |
| Thermal Conductivity | 60 W/m·K |
| Density | 5.323 g/cm³ |
| Packaging | Vacuum-sealed, single-wafer shippers, Class 100 |
Applications
IR Optics & Thermal Imaging
High refractive index (n ≈ 4.0) and 2–14 μm transmission make germanium the standard material for infrared lenses, windows, and thermal imaging systems.
Solar Cells & Photovoltaics
Germanium substrates support multi-junction III-V solar cells for space and terrestrial concentrator photovoltaic applications.
High-Speed Electronics
High electron mobility (3,900 cm²/V·s) and SiGe heteroepitaxy enable high-speed digital circuits, RF devices, and photonic interconnects.
Radiation Detection
High-purity germanium (HPGe) delivers outstanding energy resolution for gamma-ray spectroscopy, nuclear monitoring, and security screening.
Satellite & Aerospace
Radiation-tolerant germanium substrates support satellite solar arrays, IR optics, and aerospace optoelectronic systems.
R&D & Specialty Substrates
Custom orientation, doping, and thickness options support research in photonics, quantum technology, and advanced semiconductor devices.
Quality & Certification
GINECHIP germanium wafers are produced under ISO 9001:2015 with 100% inspection, and available to match SEMI M1–M13 standards as well as RoHS/REACH requirements.
Request a Germanium Quote
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