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MEMS Process PlatformTechnology
0.5μm ResolutionResolution
1,000+ Wafers/MonthCapacity
ISO 9001:2015Certification

Overview

MEMS sensors are core components of modern electronic devices, widely used in automotive, consumer electronics, medical devices, and industrial automation. GINECHIP provides comprehensive substrates and process services supporting the design and manufacturing of pressure sensors, inertial sensors, acoustic sensors, and environmental sensors.

We deliver industry-leading quality and precision — from silicon and SOI wafers to glass substrates, from DRIE etching to wafer bonding, providing one-stop fulfillment for your MEMS sensor manufacturing needs.

Sensor Types

Inertial Sensors (Accelerometers & Gyroscopes)

Capacitive comb-drive and tuning-fork structures fabricated on Si, SOI, or Si-on-Glass substrates deliver acceleration ranges from ±2g to ±200g and angular rate ranges from ±100°/s to ±2000°/s for automotive, consumer, and industrial motion sensing.

Substrates: Si, SOI, Si-on-GlassKey processes: DRIE, wafer bondingStructures: comb-drive, tuning forkRange: ±2g to ±200g (accel)Range: ±100°/s to ±2000°/s (gyro)Diameters: 150mm, 200mm

Pressure Sensors

Piezoresistive strain gauges or capacitive sensing across a sealed reference cavity measure pressures from 1 kPa to 100 MPa, with anodic or fusion bonding forming the hermetic cavity on Si, SOI, or Si-on-Glass substrates.

Substrates: Si, SOI, Si-on-GlassMembrane: Si or Si₃N₄ diaphragmPiezoresistive: doped Si strain gaugesCapacitive: sealed reference cavityRange: 1 kPa to 100 MPaAnodic/fusion bonding for cavity

MEMS Microphones

Poly-silicon or silicon-nitride diaphragms with sacrificial-layer release achieve 60–73 dB(A) SNR in wafer-level, bottom-port packages, supporting the volume manufacturing demands of consumer audio applications.

Substrates: Si wafers (150mm, 200mm)Membrane: poly-Si or Si₃N₄SNR: 60–73 dB(A)Key processes: sacrificial layer etchPackaging: wafer-level, bottom-portVolume: multi-billion units/year

MEMS Oscillators & Resonators

DETF, disk, and ring resonator structures on SOI, Si, or poly-Si substrates provide frequency references from 1 MHz to 625 MHz with TCXO-class ±0.1 ppm stability, sealed by wafer-level vacuum packaging.

Substrates: SOI, Si, poly-SiFrequency: 1 MHz–625 MHzStability: ±0.1 ppm (TCXO class)Resonator: DETF, disk, ringProcess: DRIE + vacuum packagingWafer-level hermetic seal

Gas Sensors

SnO₂, WO₃, or ZnO sensing films paired with an integrated MEMS micro-heater enable ppb-level gas detection at under 15mW pulsed power, with fabrication compatible with wafer-level packaging.

Substrates: Si, SOI, glassSensing film: SnO₂, WO₃, ZnOIntegrated micro-heater (MEMS hotplate)Power: < 15mW (pulsed operation)Detection: ppb-level for some gasesWafer-level packaging compatible

Microfluidic & Biosensors

PDMS, SU-8, or glass microfluidic channels combined with Au, Pt, ITO, or TiN electrodes and anodic-bonded or AuSn hermetic seals support lab-on-chip and diagnostic devices manufactured to ISO 13485.

Substrates: Si, glass, SOIMicrofluidics: PDMS, SU-8, glassSurface chemistry: silanization, PEGElectrodes: Au, Pt, ITO, TiNHermetic: anodic bonding, AuSn sealISO 13485 (medical devices)

Substrate Selection Guide

Prime Silicon Wafers

Standard and SEMI-spec prime-grade silicon wafers for structural, mechanical, and electrical MEMS layers.

SOI Wafers

Silicon-on-insulator wafers with precisely controlled device-layer thickness for defined etch-stop and released-structure fabrication.

Silicon-on-Glass

Anodically bonded silicon-glass stacks providing electrical isolation and optical access for capacitive and optical MEMS devices.

Borosilicate Glass Wafers

Thermally matched borosilicate glass wafers for anodic bonding, cavity sealing, and transparent sensor windows.

Process Services

Deep Reactive-Ion Etching

Bosch-process DRIE forms high-aspect-ratio structural features, comb fingers, and released membranes with tightly controlled sidewall profiles.

Wafer Bonding

Anodic, fusion, and eutectic bonding processes seal cavities and stack device and cap wafers with hermetic, mechanically robust interfaces.

Wafer Thinning & Backgrinding

Precision grinding and polishing reduce wafer thickness for membrane compliance, stress relief, and final package height targets.

Wafer-Level Packaging

Cap-wafer bonding and hermetic sealing protect fragile MEMS structures at the wafer level before dicing, reducing per-die packaging cost.

Dicing & Singulation

Blade and stealth dicing separate MEMS die while protecting exposed membranes, cavities, and released structures from mechanical damage.

Metrology & Test

Wafer-level electrical test, frequency response characterization, and optical/SEM inspection verify device performance before shipment.

Design Support

Our engineering team provides comprehensive MEMS design support including mask layout review, design rule checking, process flow optimization, and finite element analysis consultation. We work with your design files in GDSII, CIF, DXF, and other standard formats.

We offer multi-project wafer runs for prototyping and small-volume production, with dedicated process monitoring and in-line metrology. Our MPW service reduces your development cost by sharing mask and process costs across multiple designs.

Packaging Solutions

MEMS packaging options include wafer-level capping (anodic, glass frit, metal eutectic), die-level hermetic ceramic packages, and plastic overmolded packages with cavity. Vacuum packaging down to < 1 mTorr is available for inertial sensors and resonators.

Quality Assurance

Our quality management system is certified to ISO 9001:2015 with additional compliance to SEMI standards, RoHS, REACH, and Conflict Minerals regulations. Each shipment includes a certificate of conformance with lot traceability back to the original ingot.

Ready to Get Started?

Contact our engineering team to discuss your specific requirements and receive a detailed quotation within 24 hours.

ISO 9001 Certified SEMI Standards Compliant Class 5 Cleanroom 24-Hour Engineer Response