Graphene on Substrates (CVD) Wafer
Deliver ready-to-use graphene films for advanced device fabrication. Choose CVD monolayer graphene with <strong>>95% coverage</strong> on SiO₂/Si, sapphire, quartz, PET/PEN, and Cu foil—up to <strong>150mm</strong>.
Overview
GINECHIP supplies graphene thin films transferred onto substrates, tailored for optical, electrical, and device prototyping.
Choose monolayer (> 95% coverage), bilayer, few-layer (3–5 layers), or rGO (Reduced GO) on SiO₂/Si, sapphire, quartz, PET, PEN, or Cu-foil as-grown—up to 4″ (100mm) and 6″ (150mm).
Performance targets include <strong>sheet resistance 200–600 Ω/sq</strong> and <strong>optical transmission > 97% at 550 nm</strong>.
CVD Growth
We grow graphene on Cu foil using a controlled CVD process designed to support monolayer, bilayer, and few-layer outcomes with quality checkpoints at each stage.
- Cu foil preparation & high-temperature annealing to stabilize the catalyst surface.
- Carbon source decomposition on the copper surface to form monolayer graphene.
- Controlled cooling to preserve layer quality and uniformity.
- Initial film quality check before transfer.
CVD growth is engineered for consistent graphene coverage and electrical/optical performance on target substrates.
Transfer Process
After growth, graphene is transferred from Cu to selected substrates using wet or dry transfer routes to meet your device requirements.
Wet Transfer
PMMA support layer is used; then Cu is etched, followed by substrate cleaning to obtain the graphene film on target wafers.
Dry Transfer
A thermal-release tape / PDMS-based approach transfers graphene without wet etching steps, supporting controlled handling for delicate device stacks.
Choose the transfer route that fits your process window—wet for established flows, dry for gentler handling—while targeting uniform graphene on your selected substrates.
Characterization & Quality Control
Before shipment, each lot is verified for <strong>layer number</strong>, <strong>optical transmission</strong>, <strong>sheet resistance</strong>, and <strong>structural uniformity</strong> to ensure stable graphene performance on substrates.
Raman Spectroscopy
Monolayer graphene quality is validated by Raman metrics: I₂D/I_G > 2 with 2D peak FWHM of 25–35 cm⁻¹, supporting reliable single-layer identification across the substrate.
AFM Surface Analysis
Surface quality is controlled with RMS roughness < 0.3 nm. After transfer, cleanliness is maintained to support subsequent process integration.
Electrical Performance
Graphene charge transport is demonstrated with FET mobility of 1,000–5,000 cm²/V·s on SiO₂/Si, supporting high-quality channel behavior for transparent electronics applications.
Graphene vs. ITO vs. Silver Nanowires
When you need ultra-thin transparency with controllable sheet resistance, graphene offers an all-carbon alternative to conventional transparent conductors such as <strong>ITO</strong> and <strong>silver nanowires</strong>—with strong optical and electrical verification for process-ready substrate integration.
| Parameter | Graphene (CVD Monolayer) | ITO (In₂O₃:Sn) | Ag Nanowire Network |
|---|---|---|---|
| Material | Graphene (CVD monolayer) | ITO (In₂O₃:Sn) | Ag Nanowire Network |
| Sheet Resistance | 200–600 Ω/sq | 10–50 Ω/sq | 10–100 Ω/sq |
| Transparency (550nm) | > 97% | 85–92% | 85–92% |
| Flexibility | Excellent (bend radius < 1mm) | Poor (brittle, cracks at ~2% strain) | Good (bend radius ~3mm) |
| Mechanical Durability | Outstanding (tensile strength 130 GPa) | Fragile (ceramic, low fracture toughness) | Moderate (corrosion-prone) |
| Chemical Stability | Excellent (inert, acid/base resistant) | Moderate (acid-sensitive, In leaching) | Poor (Ag oxidation/sulfidation) |
| Thermal Conductivity | ~5,000 W/m·K (in-plane) | ~10 W/m·K | ~30 W/m·K |
| Raw Material Abundance | Carbon: abundant, low cost | Indium: critical raw material, supply risk | Silver: precious metal, price volatility |
| Process Temperature | CVD at ~1,000°C; transfer at RT | Sputter deposition at 200–400°C | Solution coating, anneal at 120–200°C |
| Scalability | Wafer-scale demonstrated (150mm); roll-to-roll emerging | Mature; large-area sputtering established | Roll-to-roll compatible; limited uniformity |
| Best For | Flexible, transparent, high-frequency; 2D heterostructures | Rigid touch screens, LCDs, low-cost TCO | Flexible touch, EMI shielding, heaters |
Applications
Flexible Displays & Wearables
Monolayer/bilayer/few-layer graphene transferred onto selected substrates enables high optical transmission and uniform coverage for bendable, transparent electronics.
Bio-sensors
Graphene-on-substrate platforms support sensitive surface interaction, with controlled layer type (monolayer, bilayer, 3–5 layers) for tailored electrochemical response.
High-Frequency / RF Devices
Tunable electrical properties—monolayer sheet resistance 200–600 Ω/sq (transferred)—help support RF device prototyping where uniformity and conductivity are critical.
Energy Storage & Batteries
Graphene and rGO on engineered substrates provide conductive, surface-active layers for electrodes and interlayers, supporting consistent fabrication across common wafer sizes (up to 6″).
2D Heterostructure Research
Choose graphene type (monolayer >95% coverage, bilayer, 3–5 layers, rGO) and substrate options (SiO₂/Si, sapphire, quartz, PET/PEN, Cu foil) to build controlled stacking and interface studies.
Gas & Chemical Sensors
Reduced GO (rGO) and multilayer graphene on stable substrates support adsorption-driven sensing, while Raman-mapped coverage targets >95% for consistent signal behavior.
Technical Specifications
| Parameter | Available Range / Values |
|---|---|
| Graphene Type | Monolayer (> 95% coverage), Bilayer, Few-layer (3–5 layers), Reduced GO (rGO) |
| Substrate Options | SiO₂/Si (90nm/285nm/300nm oxide), Sapphire, Quartz, PET, PEN, Cu foil (as-grown) |
| Wafer Size | Up to 4″ (100mm), 6″ (150mm), custom sizes |
| CVD Growth Method | CVD on Cu foil, transfer to target substrate |
| Coverage | > 95% monolayer by Raman mapping |
| Sheet Resistance | 200–600 Ω/sq (monolayer, transferred) |
| Optical Transmission | > 97% at 550nm (monolayer) |
| Raman I₂D/I_G Ratio | > 2 for monolayer; < 0.5 D/G |
| 2D Peak FWHM | 25–35 cm⁻¹ for monolayer, Lorentzian fit |
| Mobility (FET) | FET mobility: 1,000–5,000 cm²/V·s on SiO₂/Si |
| Doping Level | As-transferred: p-type 10¹²–10¹³ cm⁻² |
| Grain Size | 10–50μm (standard CVD), up to 1mm (optimized) |
| Surface Roughness | Conforms to substrate; Si/SiO₂ roughness < 0.3nm RMS after transfer |
| Residue | PMMA minimized, thermal annealing available for cleaner surface |
| Packaging | Vacuum-sealed, desiccant pack, Class 100 |
Quality & Certification
Quality assurance is supported by production controls and documentation: <strong>Monolayer graphene with > 95% coverage</strong>, <strong>sheet resistance 200–600 Ω/sq</strong>, <strong>optical transmission > 97% at 550 nm</strong>, <strong>grain size 10–50 μm up to 1 mm</strong>, and <strong>surface roughness < 0.3 nm RMS</strong>. Packaging is <strong>Class 100</strong>, with <strong>ISO 9001:2015</strong> and <strong>RoHS/REACH</strong> compliance.
Request a Quote / Customize Your Specification
Tell us your application and target requirements. We invite you to <strong>inquire for tailored graphene-on-substrate solutions</strong>.