Power Electronics — SiC & GaN Substrates for High-Voltage Devices | GINECHIP

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H 2Sic Devices

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Voltage: 650V, 1200V, 1700V, 3.3kVRDS(on): 15–80 mΩ (1200V)Tj(max): 175–200°CGate: planar or trenchBody diode: low Vf, fast recoveryDiameters: 100mm, 150mm

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Voltage: 650V, 1200V, 1700VCurrent: 2A–50A+ (per die)Qrr: near-zeroVf: 1.5V (typical @ rated I)Surge: 10× rated (MPS structure)JBS or MPS architectures

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Power: 10kW–300kW+Topology: half-bridge, 6-packBaseplate: AlSiC, CuSubstrate: AlN DBC, Si₃N₄ AMBCooling: liquid or forced airGate driver integration support

H 2Gan Devices

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Voltage: 100V, 650VRDS(on): 15–200 mΩQg: 1–10 nC (extremely low)Switching: >1 MHz capableGate: p-GaN e-modeWafer: 200mm Si (111)

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Voltage: 1.2kV–10kV (R&D)Substrate: semi-insulating 4H-SiCVertical or lateral CAVETCurrent: 1–50A (development)Thermal: 4.9 W/cm·K (SiC)Diameter: 100mm, 150mm

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Integration: FET + driver + protectionTopology: half-bridge, full-bridgeSwitching: up to 10 MHzVoltage: 48V–650VProtection: OCP, OTP, UVLOPackage: WLCSP, QFN

H 2Comparison

Property	Col Si	Col Sic	Col Gan
powerElectronicsSicGan.paramBandgap	1.12	3.26	3.39
powerElectronicsSicGan.paramCriticalField	0.3	2.8	3.3
powerElectronicsSicGan.paramElectronMobility	1,400	1,000	1,250 (bulk) / 2,000 (2DEG)
powerElectronicsSicGan.paramThermalConductivity	1.5	4.9	1.3 (bulk) / 4.9 (on SiC)
powerElectronicsSicGan.paramBaligaFOM	1	340	870
powerElectronicsSicGan.paramMaxJunctionTemp	150–175	200–250	200–250
powerElectronicsSicGan.paramWaferDiameter	200mm, 300mm	150mm, 200mm	200mm (on Si)

Table Note

H 2Applications

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H 2Substrate Quality

Our photonics-grade substrates feature superior surface quality with < 5 particles at 0.2μm, TTV < 2μm, and surface roughness < 0.2nm RMS. These specifications are critical for low-loss waveguide propagation and high-Q resonator performance.

All substrates undergo rigorous incoming inspection including AFM surface roughness measurement, spectroscopic ellipsometry for film thickness verification, and laser particle scanning. Certificates of conformance are provided with each shipment.

H 2Reliability

Environmental reliability testing includes temperature cycling, HAST, high-temperature storage, and mechanical shock per MIL-STD and JEDEC standards. Bonded wafer pairs are qualified for your application-specific environmental conditions.

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Power Electronics SiC GaN