Power Electronics SiC GaN
SiC and GaN epi-ready substrates for high-voltage power MOSFETs, Schottky diodes, and HEMTs.
Overview
Wide-bandgap semiconductors — SiC and GaN — are transforming power electronics. GINECHIP supplies high-quality SiC and GaN substrates for high-voltage, high-frequency applications ranging from EV traction inverters to data center power supplies, screened to the lowest defect densities for maximum reliability.
We deliver industry-leading quality and precision — every wide-bandgap substrate ships with full material certification and lot traceability.
SiC Devices
SiC Power MOSFETs
High-voltage SiC power MOSFETs deliver low on-resistance and fast switching for 650V–3.3kV applications, with planar or trench gate architectures optimized for EV and industrial power conversion.
SiC Schottky & JBS Diodes
Unipolar SiC Schottky and junction-barrier Schottky (JBS) diodes offer near-zero reverse recovery charge and rugged surge capability, enabling higher switching frequencies and smaller passive components.
SiC Power Modules
Half-bridge and six-pack SiC power modules integrate multiple die on AlN or Si₃N₄ direct-bonded copper substrates for high power density inverters from 10kW to 300kW+.
GaN Devices
GaN Power HEMTs (E-Mode)
Enhancement-mode p-GaN HEMTs on 200mm silicon combine ultra-low gate charge with megahertz-class switching, cutting conduction and switching losses in compact 100V and 650V power stages.
Vertical GaN Power Devices (R&D)
Vertical and lateral CAVET structures on semi-insulating 4H-SiC target next-generation 1.2kV–10kV blocking voltages, leveraging SiC's thermal conductivity for high-current R&D device development.
GaN Power ICs
Monolithically integrated GaN power ICs combine FET, gate driver, and protection circuitry in a single die, enabling switching up to 10MHz for compact 48V–650V power converters.
Material Comparison
| Property | Si | SiC | GaN |
|---|---|---|---|
| Bandgap (eV) | 1.12 | 3.26 | 3.39 |
| Critical E-Field (MV/cm) | 0.3 | 2.8 | 3.3 |
| Electron Mobility (cm²/V·s) | 1,400 | 1,000 | 1,250 (bulk) / 2,000 (2DEG) |
| Thermal Conductivity (W/cm·K) | 1.5 | 4.9 | 1.3 (bulk) / 4.9 (on SiC) |
| Baliga Figure of Merit | 1 | 340 | 870 |
| Max Junction Temp (°C) | 150–175 | 200–250 | 200–250 |
| Wafer Diameter | 200mm, 300mm | 150mm, 200mm | 200mm (on Si) |
Specifications above are based on standard products. Custom specifications available upon request.
Applications
SiC MOSFETs reduce switching losses in traction inverters and OBCs, extending EV range and shrinking thermal management systems.
High-voltage SiC devices enable compact, high-efficiency power stages for 350kW+ DC fast-charging stations.
GaN and SiC power devices raise PSU efficiency and power density, reducing energy costs and cooling requirements in hyperscale data centers.
Wide-bandgap devices improve conversion efficiency and reduce passive component size in string and central solar inverters.
SiC-based drives deliver higher switching frequencies and torque control precision for industrial motors and robotics.
GaN power stages support compact, high-efficiency base station and grid-edge power conversion for next-generation telecom infrastructure.
Substrate Quality
Our power-electronics-grade substrates feature superior surface quality with < 5 particles at 0.2μm, TTV < 2μm, and surface roughness < 0.2nm RMS. These specifications are critical for low-defect-density epitaxial growth and high device yield.
All substrates undergo rigorous incoming inspection including AFM surface roughness measurement, spectroscopic ellipsometry for film thickness verification, and laser particle scanning. Certificates of conformance are provided with each shipment.
Reliability
Environmental reliability testing includes temperature cycling, HAST, high-temperature storage, and mechanical shock per MIL-STD and JEDEC standards. Bonded wafer pairs are qualified for your application-specific environmental conditions.
Ready to Get Started?
Contact our engineering team to discuss your specific requirements and receive a detailed quotation within 24 hours.