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±0.2μm (k=2)Stat Ttv Accuracy
TTV · Bow · WarpStat Geometry Params
≥ 2,500 ptsStat Dense Grid
SEMI MF1390/1451/1530Stat Standards Compliant

Overview

A comprehensive overview of our capabilities and services.

We deliver industry-leading quality and precision.

Sec Measurement Services

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Capacitance gauge: 0.01μm resolution≥ 2,500 points per 300mm waferTTV reported: max-min (μm)Global metric, full waferSEMI MF1530 compliantNIST-traceable calibration

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Free-state measurement (no chuck)Optical profilometry / laser scanBow: warp in free statePositive (convex) or negative (concave)Resolution: 0.1μmSEMI MF1390 / MF1451 compliant

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Free-state measurementBest-fit plane referencePeak-to-valley: entire waferCaptures all shape deviationsResolution: 0.1μmSEMI MF1390 / MF1451 compliant

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Flatness = thickness variation (chucked)Shape = curvature (free state)Both must be specified for processIndependent measurement methodsComplementary quality metricsCritical for thin wafer handling

Sec Process Flow

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Sec Quality Specs

ParameterTarget SpecificationMeasurement Method
TTV Accuracy± 0.2μm (k=2)NIST-traceable thickness standards
TTV Repeatability± 0.1μm (3σ)Repeat measurements (30 cycles)
Bow Measurement Accuracy± 1.0μm (k=2)NIST-traceable optical flat reference
Warp Measurement Accuracy± 1.5μm (k=2)NIST-traceable optical flat reference
Bow/Warp Repeatability± 0.5μm (3σ)Repeat measurements on standard wafer
Measurement Speed (300mm)TTV: 30 sec; Bow/Warp: 60 secCycle time measurement
Environmental Control23 ± 0.5°C; 45 ± 5% RHNIST-traceable sensors, continuous log
Data Export FormatCSV, PDF report, SPC data packageLIMS data export module

Table Note

Sec Measurement Methods

Cap Gauge Title

Capacitive thickness measurement provides non-contact, high-speed TTV (Total Thickness Variation) characterization with resolution down to 0.1μm. Our multi-point capacitive gauging systems map the entire wafer surface for comprehensive thickness profiling.

Optical Profilometry Title

White light interferometry and confocal microscopy provide nanometer-resolution surface topography measurement for critical applications. These techniques characterize surface roughness, step heights, and local surface features with sub-nanometer vertical resolution.

Sec Shape Vs Flatness

While flatness (TTV, STIR, SFQR) measures the thickness variation across the wafer, shape parameters (Bow, Warp) characterize the 3D deformation of the wafer independent of thickness. Understanding both is critical for lithography depth-of-focus budgets and wafer handling.

Sec Thin Wafer

Ultra-thin wafers below 200μm present unique metrology challenges due to gravitational sag and handling-induced deformation. We use specialized support fixtures and gravity-compensated measurement algorithms to achieve accurate measurements on thin and ultra-thin substrates.

Sec Data Output

Data Output Intro

Pdf Report Title

Each measurement lot is accompanied by a comprehensive PDF report including wafer maps, statistical summaries, pass/fail classification, and trend charts. Reports include traceability information linking each wafer to its unique ID, measurement date, and operator.

Csv Export Title

All measurement data is available in industry-standard CSV format for direct import into your SPC software. Data includes raw measurement points, calculated statistics, and pass/fail classification per your specified limits.

Applications

App Incoming QCTitle

App Incoming QCDesc

AQL sampling or 100% Supplier-independent verification Shipping damage detection NIST-traceable data

Sec Quality Assurance

Our metrology laboratory maintains ISO 17025 accreditation with NIST-traceable reference standards. All measurement equipment undergoes daily calibration verification with certified reference wafers, and our measurement uncertainty is documented for each parameter type.

CTA Title

Contact our engineering team to discuss your specific requirements and receive a detailed quotation within 24 hours.

ISO 9001 Certified Meta Nist SEMI T7 Compliant Meta Cleanroom