Compound Semiconductor Ingot Bulk Sales | GINECHIP
Bulk compound semiconductor ingots from GINECHIP: GaAs, InP, SiC and Sapphire with full CoA (XRD, EPD, resistivity mapping) and SEMI/RoHS/REACH compliance.
Market Overview
GaAs and InP ingots support RF and photonics manufacturing, while SiC enables high-power electronics. Sapphire ingots are widely used as substrates for LED growth and other optoelectronic applications.
Every batch is delivered with <strong>full CoA</strong> including XRD, EPD, and resistivity mapping to strengthen traceability and lot-to-lot confidence. Materials comply with SEMI, RoHS, REACH and Conflict Minerals requirements.
<strong>Each ingot ships with a full CoA and a unique traceability ID.</strong> Verified growth documentation—ready for incoming qualification and process control.
GaAs (Gallium Arsenide) Ingot Supply
Bulk-ready GaAs ingots for compound semiconductor production—available in <strong>VGF/LEC</strong>, 2″–6″ diameter, SI / N-type / P-type, with EPD control (<strong>EPD < 5×10³/cm²</strong>) and lengths up to <strong>300 mm</strong>.
Growth Methods
VGF (Vertical Gradient Freeze)
VGF-grown GaAs ingots offer controlled crystal quality with <strong>2″–6″</strong> diameter options, supporting SI / N-type / P-type. Typical EPD target: <strong>EPD < 500 (for 4″)</strong>, with growth by VGF.
LEC (Liquid-Encapsulated Czochralski)
LEC-grown GaAs ingots are designed for stable compound-semiconductor supply, with <strong>2″–6″</strong> diameter availability and SI / N-type / P-type options. Typical EPD target: <strong>EPD < 5×10³/cm²</strong>, with growth by LEC.
InP (Indium Phosphide) Ingot Supply
InP ingots for RF/photonic and advanced compound-semiconductor applications—available in <strong>VGF/LEC</strong>, 2″–4″ diameter, with <strong>EPD < 5×10⁴/cm²</strong> and lengths up to <strong>200 mm</strong>. SI or N-type options supported.
Growth Methods
VGF (Vertical Gradient Freeze)
VGF-grown InP ingots with controlled defect levels for precision compound-semiconductor production. Typical specs include <strong>2″–4″</strong> diameter and <strong>EPD < 5×10⁴/cm²</strong>, with SI or N-type available.
LEC (Liquid-Encapsulated Czochralski)
LEC-grown InP ingots support stable supply for advanced compound-semiconductor lines. Offered in <strong>2″–4″</strong> diameter with <strong>EPD < 5×10⁴/cm²</strong>, and resistivity availability for SI or N-type, using LEC growth.
SiC (Silicon Carbide) Ingot Supply
SiC ingots for high-power and harsh-environment semiconductor applications—produced by <strong>PVT</strong>, offering <strong>4″–8″</strong> diameter, 4H-SiC & 6H-SiC polytypes, N-type and SI, <strong>MPD</strong> control (<strong>MPD < 1/cm²</strong>) and thickness up to <strong>50 mm</strong>.
Growth Methods
PVT (Physical Vapor Transport)
SiC ingots grown by <strong>PVT (Physical Vapor Transport)</strong>, available in <strong>4H-SiC</strong> and <strong>6H-SiC</strong> polytypes, with <strong>N-type</strong> and <strong>SI</strong> options. Target performance includes <strong>MPD < 1/cm²</strong> for 4″–8″ diameter, with tighter specifications at <strong>6″: < 0.5/cm²</strong> and <strong>8″: < 1/cm²</strong>, and ingot thickness up to <strong>50 mm</strong>.
Sapphire (Al₂O₃) Ingot Supply
Sapphire (Al₂O₃) cards for crystal growth and wafer supply, available in <strong>2″–12″</strong> diameters (50–300 mm). Choose crystal orientation in <strong>C-plane</strong>, <strong>R-plane</strong>, or <strong>A-plane</strong>, with <strong>bubble-free</strong> quality for KY/HEM growth. Growth types include <strong>KY</strong>, <strong>EFG</strong>, and <strong>HEM</strong> (bubble-free for KY/HEM).
Growth Methods
Kyropoulos (KY)
Kyropoulos (KY) grown sapphire ingots delivering <strong>large diameter</strong>, <strong>low stress</strong> bulk material with <strong>bubble-free</strong> quality. Available in <strong>2″–12″</strong> diameter and up to <strong>500 mm</strong> length.
EFG (Edge-Defined Film-Fed Growth)
EFG (Edge-Defined Film-Fed Growth) sapphire ingots designed for high <strong>shape forming efficiency</strong> and consistent, rule-based geometries. Bubble-free quality with growth options KY / EFG / HEM and sizes up to <strong>2″–12″</strong> diameter.
HEM (Heat Exchanger Method)
HEM (Heat Exchanger Method) sapphire ingots built for <strong>high quality</strong> crystal growth with <strong>fewer dislocations</strong>. Suited for larger-diameter production with bubble-free output across KY / EFG / HEM growth lines.
Ingot Yield Advantage
Designed for stable batch output with controlled defect targets. Our documented quality supports consistent cutting yields and repeatable wafer processing.
Crystal Growth Yield
High qualification rate with repeatable growth control—built around low EPD targets for uniform performance.
Diameter Utilization
Wide diameter coverage supports efficient wafer cutting with lower material waste across production lines.
Batch-to-Batch Consistency
Unique ingot ID and growth run history enable tight traceability. Seed lineage and mapped properties support stable processing across lots.
Lead Times & MOQ
Batch supply lead times for compound semiconductor ingots are shown by material. Confirm availability and sealing requirements when ordering.
| Material | Standard Lead Time | Minimum MOQ | Delivery Cycle |
|---|---|---|---|
| GaAs (VGF, 4″–6″) | 2–4 weeks | 5 ingots | 3–5 weeks |
| InP (VGF, 2″–4″) | 4–6 weeks | 5 ingots (nitrogen-sealed packaging) | 5–7 weeks |
| SiC (PVT, 6″–8″) | 6–10 weeks | 3 ingots | 8–14 weeks |
| Sapphire (KY, 4″–12″) | 8–12 weeks | 2 ingots | 10–16 weeks |
<strong>Lead time summary</strong>: Bulk volume and long-term contracts are available for negotiation. MOQ can be discussed based on your project schedule and forecast.
Doping & Conductivity Control
We supply compound semiconductor ingots with <strong>semi-insulating</strong> and <strong>conductive</strong> types. Doping species and target levels are customized by material and customer requirements, supporting SiC (4H/6H) for RF/photonic substrates and GaAs/InP for optoelectronic and electronic applications.
Semi-Insulating (SI)
High resistivity semi-insulating grades for stable device operation. Typical: <strong>SI-GaAs: resistivity >10⁷ Ω·cm</strong>; <strong>SI-InP</strong>. High-resistance SiC for RF/photonic substrate applications.
N-Type / P-Type Conductive
Conductive doping for electronic and optoelectronic needs. Examples: <strong>GaAs N-type</strong> (Si, S); <strong>GaAs P-type</strong> (Zn, Cr). <strong>InP</strong> supports N-type (S, Sn) and Zn/Si-based P-type, and <strong>SiC</strong> supports N-type (N) and Al-based P-type.
Customized Doping
We tailor doping to your target <strong>resistivity</strong> / <strong>carrier concentration</strong>. Achieve uniform dopant distribution and batch-to-batch consistency for reliable device processing. Dopant levels are configurable by request.
Applications
GaAs RF & Comms
Ideal for RF front-end and wireless modules using <strong>GaAs</strong> ingots (VGF/LEC, 2″–6″, SI/N/P-type) with <strong>EPD < 5×10³/cm²</strong> for stable device fabrication at 300mm.
InP Photonics
Built for optical communication and optoelectronic devices using <strong>InP</strong> ingots (VGF/LEC, 2″–4″, N-type/SI) with <strong>EPD < 5×10⁴/cm²</strong> to support reliable 200mm wafer processing.
SiC Power Electronics
For high-reliability power devices and harsh-environment applications using <strong>SiC</strong> ingots (PVT, 4″–8″, 4H/6H, N & SI) with <strong>MPD < 1/cm²</strong> for consistent 50mm manufacturing.
Sapphire LED Lighting
Designed for LED/lighting and substrate formation using <strong>Sapphire (Al₂O₃)</strong> ingots (KY/EFG/HEM, 2″–12″) with C/R/A-plane and <strong>bubble-free</strong> quality for large-scale 500mm processing.
R&D & Epitaxy
Support experimental and epitaxial stack development with compound semiconductors, selecting the right <strong>GaAs</strong> (VGF/LEC, 2″–6″, EPD < 5×10³/cm²), <strong>InP</strong> (VGF/LEC, 2″–4″, EPD < 5×10⁴/cm²), or <strong>SiC</strong> (PVT, 4″–8″, MPD < 1/cm²).
Space-Ready Semiconductors
For satellite communication and space electronics requiring robust wafers, leveraging <strong>GaAs</strong> (VGF/LEC, 2″–6″, EPD < 5×10³/cm²) at 300mm and <strong>InP</strong> (VGF/LEC, 2″–4″, EPD < 5×10⁴/cm²) for photonics integration on 200mm.
Industrial Wafer Production
Scale-up manufacturing with high-quality compound ingots: <strong>SiC</strong> (PVT, 4″–8″, 4H/6H, N & SI, MPD < 1/cm²) for reliable 50mm processing and <strong>Sapphire</strong> (KY/EFG/HEM, 2″–12″, bubble-free) for substrate supply on 500mm.
Compound Substrate Supply
Matched for compound semiconductor fabs and wafer manufacturing, offering <strong>GaAs</strong> (VGF/LEC, 2″–6″, SI/N/P-type, EPD < 5×10³/cm²), <strong>InP</strong> (VGF/LEC, 2″–4″, N-type/SI, EPD < 5×10⁴/cm²), <strong>SiC</strong> (PVT, 4″–8″, MPD < 1/cm²) and <strong>Sapphire</strong> (KY/EFG/HEM, 2″–12″, bubble-free) to streamline sourcing.
Quality & Compliance
Each ingot is supplied with a complete CoA and full traceability records. Documents include XRD, EPD, and resistivity mapping as applicable, supporting consistent wafer/substrate production and verification.
Technical Specifications (Key Parameters)
| Parameter | Specification / Value |
|---|---|
| GaAs Ingots | VGF/LEC, 2″ – 6″ diameter, SI / N-type / P-type, EPD ＜ 5×10³/cm², up to 300mm length |
| InP Ingots | VGF/LEC, 2″ – 4″ diameter, N-type SI available, EPD ＜ 5×10⁴/cm², up to 200mm length |
| SiC Ingots | PVT, 4″ – 8″ diameter, 4H-SiC & 6H-SiC, N-type & SI, MPD ＜ 1/cm², up to 50mm thickness |
| Sapphire Ingots | Kyropoulos / EFG / HEM, 2″ – 12″ diameter, C/R/A-plane, bubble-free, up to 500mm length |
| Doping Level | Per material specification and customer requirement |
| Crystal Orientation | On-axis or off-axis per specification |
| Surface | As-grown, ground, oriented flats/notches |
| Quality Documentation | Full CoA including XRD, EPD, resistivity mapping for each ingot |
| Traceability | Unique ingot ID, growth run history, seed lineage |
| Packaging | Custom crate with vibration isolation, nitrogen-purged container for hygroscopic materials (InP) |
| Compliance | SEMI Standards, RoHS, REACH, Conflict Minerals |
Ready to source compound semiconductor ingots in bulk?
Contact our sales team for inquiry, samples, and details on MOQ and lead time. We support GaAs (VGF/LEC, 2″–6″), InP (VGF/LEC, 2″–4″), SiC (PVT, 4″–8″, 4H/6H) and Sapphire (KY/EFG/HEM, 2″–12″; C/R/A-plane) with full CoA and traceability.