Photolithography
photolithography.desc
Overview
Photolithography is the foundational patterning technology for semiconductor and MEMS fabrication — transferring micron- to sub-micron-scale patterns from a photomask to a photoresist-coated wafer. GINECHIP operates five distinct lithography platforms to cover the full range of resolution, throughput, and cost requirements.
From contact lithography for MEMS at 0.5–2μm resolution, to i-line projection steppers for sub-micron CMOS at 0.35μm, to maskless direct-write for rapid prototyping without mask costs, to nanoimprint lithography for sub-50nm features — we match the technology to your application, not the other way around.
Lithography Technologies
Contact Lithography
Resolution 0.5–2μm. Mask aligner: SUSS/EVG. Substrates from fragments to 200mm. Top/bottom side alignment. Double-side alignment available.
Proximity Lithography
Resolution 2–5μm. Proximity gap 10–50μm. Reduced mask wear. Higher throughput vs contact. Gap uniformity control.
Projection Stepper (i-line)
Resolution 0.35–0.5μm. Reduction 4×/5×. i-line 365nm. Overlay < 50nm. Throughput 60–80 wph.
Maskless Direct-Write Lithography
Resolution 0.6–2μm. Write speed up to 300mm²/min. GDSII/DXF/CIF input. No mask cost. Ideal for R&D and prototyping.
Nanoimprint Lithography (NIL)
Resolution < 50nm. UV-NIL and thermal NIL. Stamp: Si, quartz, flexible. Full wafer and step-and-repeat. Aspect ratio up to 15:1.
Resist Portfolio
Positive Photoresists
DNQ/Novolak-based (i-line, g-line) and chemically amplified (DUV 248nm). Resolution down to 0.35μm. High contrast, good thermal stability up to 130°C. Standard for MEMS and CMOS front-end processes.
Negative Photoresists
SU-8 (epoxy-based) for high-aspect-ratio MEMS structures. Cyclized polyisoprene for wet etching. Thickness from 0.5μm to > 200μm for SU-8. Excellent chemical resistance.
Image-Reversal Resists
Single resist for both positive and negative tone via post-exposure reversal bake. Enables lift-off profiles with negative sidewall slope. Ideal for metal lift-off processes.
Thick Resists & Specialty Coatings
SU-8 up to 500μm for MEMS molding. Polyimide for permanent dielectric layers. BCB for wafer bonding and planarization. Spray-coating for high-topography surfaces.
Process Capabilities
| Parameter | Capability |
|---|---|
| Minimum Feature Size | 0.35μm (stepper), 0.5μm (contact), 0.6μm (direct-write) |
| Overlay Accuracy | < 50nm (stepper), < 1μm (contact) |
| Wafer Size Range | Fragments to 300mm |
| Resist Thickness Range | 0.3μm–500μm |
| Double-Side Alignment | Front-to-back < 2μm (contact/proximity) |
| Exposure Wavelengths | i-line (365nm), g-line (436nm), broadband UV |
| Mask Data Formats | GDSII, DXF, CIF, Gerber |
| Cleanroom Class | ISO Class 5 (Class 100) |
Typical Applications
Comb-drive structures, membranes, cantilevers, micro-mirrors, and microfluidic channels. Contact and proximity lithography for feature sizes 0.5–5μm.
High-resolution pixel arrays. i-line stepper lithography with < 50nm overlay accuracy for multi-layer color filter and microlens integration.
Large-area device patterning on 200–300mm wafers. Thick resist processing for high-energy implant masking. Double-side alignment for vertical device structures.
Fine-line interconnects and passive components. Projection stepper lithography for 0.35μm gate definition. GDSII support for complex RF layouts.
SU-8 mold fabrication for PDMS casting. Channel widths down to 5μm. Thick resist processing up to 500μm. Glass and polymer substrate compatible.
Si₃N₄ and SOI waveguide patterning. Sub-micron linewidth control for single-mode operation. Nanoimprint lithography for grating couplers.
Mask Design & Support
Our mask support team provides GDSII file review, design rule checking (DRC) for lithography compatibility, mask polarity verification (clear/dark field), bias compensation for etch undercut, and multi-layer overlay alignment mark design.
Lithography Metrology
Post-lithography metrology includes CD-SEM for critical dimension measurement, overlay metrology for layer-to-layer alignment verification, optical microscope inspection for defect review, and resist thickness measurement via spectroscopic reflectometry.
Quality Assurance
All photolithography processes operate under ISO Class 5 cleanroom conditions with temperature and humidity control (±0.5°C, ±2% RH). Particle monitoring is continuous. Every lot includes a resist process control wafer for linewidth and resist profile verification.
Need Precision Patterning for Your Wafers?
Send your GDSII file and wafer specifications — our team will review and provide a detailed lithography quotation within 24 hours.