化合物半導體
超越矽 — GaAs、GaN、SiC、InP和特殊III-V基板，用於RF、功率電子、光子學和紅外感測。
概述
化合物半導體實現了單靠矽無法達到的元件性能 — 更高的電子遷移率、更寬的能隙、直接能隙發射和卓越的導熱性。在GINECHIP，我們向全球代工廠、元件製造商和研究實驗室提供全面的<strong>III-V、II-VI和寬能隙半導體基板</strong>。
從用於RF功率放大器和低噪聲前端的<strong>半絕緣GaAs</strong>，到用於1200V+ MOSFET和肖特基勢壘二極管的<strong>4H-SiC基板</strong>，再到用於高速光電探測器和激光器的<strong>InP外延就緒晶圓</strong> — 我們為您的外延生長製程提供合適的基板。
材料目錄
砷化鎵 (GaAs)
RF和微波電子產品的主力材料。1.42 eV的直接能隙可實現IR LED、激光二極管和HBT/HEMT結構的高效發光。
- SI-GaAs for RF switches, LNAs, power amplifiers (mobile, WiFi, SATCOM)
- N-type and P-type for optoelectronic devices (VCSELs, photodetectors)
- Available in 2″–6″ diameters, SSP and DSP
- Epi-ready with < 3 Å RMS surface roughness
氮化鎵 (GaN)
寬能隙(3.4 eV)半導體，可實現高功率、高頻和高溫操作。提供Si、SiC或原生GaN基板。
- GaN-on-Si: Cost-effective for power HEMTs up to 650V
- GaN-on-SiC: Superior thermal for RF HEMTs (5G base stations, radar, EW)
- GaN-on-Sapphire: Blue/green/UV LED epitaxy
- Free-standing GaN: Lowest defect density for laser diodes
碳化矽 (SiC)
4H-SiC和6H-SiC多型體，具有卓越的導熱性(490 W/m·K)和臨界場強(2.8 MV/cm)。下一代功率電子產品的首選平台。
- 4H-SiC: MOSFETs, JBS/MPS diodes (600V–3.3kV)
- Semi-insulating 4H-SiC for GaN HEMT epi on SiC
- 6H-SiC: Optoelectronics, UV photodiodes
- N-type and SI available, 100mm and 150mm diameters
磷化銦 (InP)
高電子速度和1.34 eV的直接能隙。對光纖通信、亞THz電子和高效光伏至關重要。
- N-type and Fe-doped SI substrates
- 2″–4″ diameters, epi-ready polish
- DFB/FP lasers, PIN/APD photodetectors, EO modulators
- HBT and HEMT structures for >100 GHz operation
藍寶石 (Al₂O₃)
六方晶體結構，從UV到中紅外透明。GaN LED外延和藍寶石上矽(SOS) RF電路的行業標準基板。
- C-plane (0001) for LED epi; R-plane for SOS
- 2″–8″ diameters, SSP and DSP
- Patterned sapphire substrate (PSS) for improved LED extraction
- High thermal stability up to 1800°C
氮化鋁 (AlN)
超寬能隙(6.2 eV)，導熱性接近320 W/m·K。對深紫外LED、高功率RF封裝和BAW/SAW濾波器至關重要。
- Single-crystal AlN substrates, 1″–2″ diameters
- Native substrate for AlGaN-based deep-UV LEDs (UVC disinfection)
- Polycrystalline AlN for thermal management applications
- SAW-grade AlN films on Si and sapphire
技術規格
| 參數 | 可用範圍 / 值 |
|---|---|
| Materials | GaAs, GaN-on-Si, GaN-on-SiC, InP, SiC (4H-SiC, 6H-SiC), Sapphire, AlN, GaSb, InAs, InSb |
| Diameter | 50mm (2″), 76mm (3″), 100mm (4″), 150mm (6″), 200mm (8″) |
| Orientation | 〈100〉, 〈111〉, C-plane, R-plane, A-plane, M-plane (material-dependent) |
| Dopant / Type | Semi-Insulating (SI), N-type (Si-doped), P-type (Zn/Mg-doped), UID (unintentionally doped) |
| Thickness | 350μm–1000μm (custom thinning to 100μm available) |
| Surface Polish | SSP, DSP, Epi-Ready (RMS < 0.3nm for GaAs, < 0.5nm for SiC) |
| Resistivity | SI GaAs: > 10⁷ Ω·cm; N-type GaAs: 10⁻³–10⁻¹ Ω·cm; SI SiC: > 10⁵ Ω·cm |
| Micropipe Density (SiC) | < 1/cm² for high-grade 4H-SiC substrates (MPD down to 0.1/cm²) |
| EPD | GaAs: < 5×10³/cm²; InP: < 5×10⁴/cm²; SiC: < 5×10³/cm² |
| TTV / Bow / Warp | As low as < 5μm TTV, < 15μm Bow, < 20μm Warp |
| Packaging | Single-wafer cassettes, vacuum-sealed, Class 1 cleanroom packaging |
應用矩陣
| 應用 | 推薦基板 | 關鍵特性 |
|---|---|---|
| Mobile RF Front-End | SI-GaAs | High electron mobility, SI resistivity |
| 5G Base Station PA | GaN-on-SiC | High power density, thermal management |
| Electric Vehicle Inverter | 4H-SiC | High breakdown voltage, low Rds(on) |
| 100G/400G Optical Transceiver | InP (SI) | Direct bandgap, high carrier velocity |
| Blue/Green LED | GaN-on-Sapphire | Lattice match, cost-effective, transparent |
| UVC LED (265nm) | AlN | UV-transparent, lattice-matched to AlGaN |
| mmWave Radar (77GHz) | SI-GaAs or InP | High-frequency gain, low noise figure |
| Radiation-Hard Electronics | 4H-SiC or GaN | Wide bandgap, radiation tolerance |
品質與供應鏈
所有化合物半導體基板均經過嚴格的進料品質檢驗，包括XRD搖擺曲線分析、表面粗糙度測量(AFM)、電阻率映射和表面缺陷光學檢測。在ISO 9001:2015認證的供應鏈中，從晶體生長到最終出貨保持完整批次追溯。