電力電子 SiC/GaN
用於高壓功率MOSFET、肖特基二極管和HEMT的SiC和GaN外延就緒基板。
概述
寬禁帶半導體（SiC和GaN）正在徹底改變電力電子產業。GINECHIP提供高品質的SiC和GaN基板，支援從電動車牽引逆變器到數據中心電源的各種高壓、高頻應用。我們的基板經過嚴格的品質篩選，確保最低的缺陷密度和最高的可靠性。
我們提供業界領先的品質和精度，所有寬禁帶基板均附帶完整的材料認證和追溯資訊。
SiC器件
powerElectronicsSicGan.sic1Name
powerElectronicsSicGan.sic1Desc
powerElectronicsSicGan.sic2Name
powerElectronicsSicGan.sic2Desc
powerElectronicsSicGan.sic3Name
powerElectronicsSicGan.sic3Desc
GaN器件
powerElectronicsSicGan.gan1Name
powerElectronicsSicGan.gan1Desc
powerElectronicsSicGan.gan2Name
powerElectronicsSicGan.gan2Desc
powerElectronicsSicGan.gan3Name
powerElectronicsSicGan.gan3Desc
材料比較
| 屬性 | Si | SiC | GaN |
|---|---|---|---|
| powerElectronicsSicGan.paramBandgap | 1.12 | 3.26 | 3.39 |
| powerElectronicsSicGan.paramCriticalField | 0.3 | 2.8 | 3.3 |
| powerElectronicsSicGan.paramElectronMobility | 1,400 | 1,000 | 1,250 (bulk) / 2,000 (2DEG) |
| powerElectronicsSicGan.paramThermalConductivity | 1.5 | 4.9 | 1.3 (bulk) / 4.9 (on SiC) |
| powerElectronicsSicGan.paramBaligaFOM | 1 | 340 | 870 |
| powerElectronicsSicGan.paramMaxJunctionTemp | 150–175 | 200–250 | 200–250 |
| powerElectronicsSicGan.paramWaferDiameter | 200mm, 300mm | 150mm, 200mm | 200mm (on Si) |
所有規格均基於標準產品。客製化規格可根據需求提供。
應用領域
powerElectronicsSicGan.app1Desc
powerElectronicsSicGan.app2Desc
powerElectronicsSicGan.app3Desc
powerElectronicsSicGan.app4Desc
powerElectronicsSicGan.app5Desc
powerElectronicsSicGan.app6Desc
基板品質
我們的功率電子級基板具有卓越的表面品質，顆粒數< 5（0.2μm）、TTV < 2μm、表面粗糙度< 0.2nm RMS。這些規格對於低缺陷密度的外延生長和高良率的器件製造至關重要。
所有基板均經過嚴格的進料檢驗，包括AFM表面粗糙度量測、光譜橢偏儀薄膜厚度驗證和雷射顆粒掃描。每批貨物均附帶合格證書。
可靠性
環境可靠性測試包括溫度循環、HAST、高溫儲存和機械衝擊，均按照MIL-STD和JEDEC標準進行。鍵合晶圓對針對您應用特定的環境條件進行了驗證。