100mm–300mm直徑範圍
50μm–725μm厚度範圍
TTV < 1μm厚度精度
SEMI M1 Standard邊緣輪廓
概述
晶圓尺寸調整服務允許將晶圓從一種直徑轉換為另一種直徑，幫助晶圓廠和設備製造商適應不同的製程設備要求。GINECHIP提供精密的晶圓尺寸調整服務，支援從碎片到300mm的各種尺寸。
我們提供業界領先的品質和精度，確保調整尺寸後的晶圓符合所有SEMI標準。
尺寸調整服務
waferResizing.svc1Title
waferResizing.svc1Desc
Reduction: 200→150, 200→100, 150→100Other conversions by requestEdge: SEMI standard profileEdge chipping: < 0.3mmConcentricity: < 50μmWafer: Si, SOI, glass, ceramic
waferResizing.svc2Title
waferResizing.svc2Desc
Primary flat: SEMI M1 standardNotch: SEMI M1 standardOrientation accuracy: < 1°Length/depth per standardPost-machining edge polishWafer: Si, GaAs, InP, SiC
waferResizing.svc3Title
waferResizing.svc3Desc
Profiles: T, R, K (SEMI M1)Custom profiles by requestEdge polish: mechanical + CMPEdge roughness: Ra < 0.5μmMicro-crack eliminationPost-process edge inspection
waferResizing.svc4Title
waferResizing.svc4Desc
Method: grinding, lapping, CMPTarget: 50μm–725μmTTV: < 1μm (post-CMP)Bow/warp: within specificationStress relief etch optionalWafer: Si, SOI, glass, SiC
waferResizing.svc5Title
waferResizing.svc5Desc
Split: 1 wafer → multiple smallerCircular or rectangular formatsDicing or cleaving optionsEdge quality: minimal chippingCustom sizes: drawing-basedMaterial: Si, SOI, glass
waferResizing.svc6Title
waferResizing.svc6Desc
Method: XRD rocking curveAccuracy: < 0.1°Marking: new flat/notch or laserSi, GaAs, InP, SiC, sapphireReport: orientation confirmedPost-ID: laser mark if needed
邊緣品質控制
調整尺寸後的邊緣品質通過邊緣輪廓顯微鏡驗證，確保邊緣裂縫、碎屑和表面損傷在SEMI標準允許範圍內。
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ISO 9001 認證SEMI 合規邊緣檢測XRD 分析