Glass Substrate for Advanced Packaging
The ultimate substrate for the high-frequency, high-speed era — glass delivers 10× interconnect density, near-zero dielectric loss, and tunable CTE for next-generation packaging.
개요
Glass substrates are emerging as the next technology frontier after organic substrates, driven by the insatiable demand for higher interconnect density, lower signal loss, and better dimensional stability in advanced packaging. Glass offers a unique combination of properties: CTE tunable to match silicon (3–8 ppm/K), dielectric loss below 0.005 at 10 GHz (10× better than organic), and atomic-level surface smoothness that enables finer lithographic patterning than any organic laminate.
The industry is investing heavily in glass substrate technology. Intel has demonstrated glass core substrates for next-generation server processors, Samsung is developing glass interposers for 2.5D packaging, and multiple OSATs are qualifying glass-based panel-level packaging. For 224 Gbps and beyond high-speed signaling, glass is increasingly seen as the only viable substrate material that can meet the signal integrity requirements.
Key Technology Features
Tunable Thermal Expansion
Glass CTE can be engineered from 3 to 8 ppm/K through composition control, matching silicon (3.2 ppm/K) and minimizing thermal stress in multi-die assemblies. This is a critical advantage over organic substrates which typically have CTE >15 ppm/K.
Ultra-Low Dielectric Loss
With a dissipation factor (Df) <0.005 at 10 GHz, glass dramatically reduces signal loss compared to organic substrates (Df ~0.02). This enables 224 Gbps PAM4 signaling and beyond, making glass essential for next-generation SerDes and optical I/O applications.
Superior Surface Quality
Glass surfaces achieve sub-nanometer roughness (Ra <0.5nm) without additional processing, enabling direct fine-pitch lithography. This eliminates the need for planarization layers required by organic substrates and supports L/S patterning below 1μm.
TGV (Through-Glass Via) Technology
Through-glass vias provide vertical electrical connections through the glass substrate. With diameters of 20–50μm and aspect ratios up to 6:1, TGVs enable high-density vertical interconnects. GINECHIP supports the full TGV metallization process flow.
GINECHIP Solutions
Borosilicate glass with CTE 3.25 ppm/K, excellent chemical resistance, and high transmission. Ideal for panel-level packaging and glass interposer applications.
Ultra-low CTE (0.55 ppm/K), exceptional UV transmission, and near-zero dielectric loss. The premium choice for high-frequency RF and photonic packaging applications.
Extreme hardness, high thermal conductivity (35 W/m·K), and excellent electrical insulation. Used for high-power RF and LED packaging where thermal management is critical.
Piezoelectric properties, high Q-factor, and excellent temperature stability. Used in RF filters, oscillators, and timing devices for 5G/6G communication systems.
Target Applications
Glass substrates are being adopted for AI/ML accelerator packaging (panel-level CoPoS), high-performance computing interposers, RF/mmWave communication modules, photonic integrated circuits, and MEMS/sensor platforms. The technology is also gaining traction in automotive electronics, where reliability under thermal cycling and vibration is paramount.