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2″ – 8″ Diameter galliumNitride.statLabel1
C-plane (0001) galliumNitride.statLabel2
GaN Epi 2–8μm galliumNitride.statLabel3
DD < 5×10⁸/cm² galliumNitride.statLabel4
개요
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Diameter 2″ – 8″
Thickness Uniformity ±5%
Dislocation Density < 5×10⁸/cm²
Throughput High (production)
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Diameter 2″ – 4″ (typical)
Growth Rate 50–200 μm/hr
Dislocation Density < 1×10⁷/cm²
Throughput Low (specialty)
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Diameter 2″ – 4″
Dislocation Density < 5×10⁶/cm²
Process Complexity High (multi-step)
Throughput Low (laser-grade)
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| 매개변수 | GaN | Silicon (Si) | GaAs | 4H-SiC |
|---|---|---|---|---|
| Bandgap (eV) | 3.4 (direct) | 1.12 (indirect) | 1.42 (direct) | 3.26 (indirect) |
| Critical Field (MV/cm) | 3.3 | 0.3 | 0.4 | 2.8 |
| Electron Mobility (cm²/V·s) | 2,000 (2DEG) | 1,350 | 8,500 | 900 |
| Saturation Velocity (10⁷ cm/s) | 2.5 | 1.0 | 1.2 | 2.0 |
| Thermal Conductivity (W/m·K) | 130 (bulk) / 250 (SiC) | 150 | 55 | 490 |
| Max Operating Temp (°C) | > 500 | 150 | 200 | > 600 |
| JFOM (Johnson Figure of Merit) | 760 | 1 | 3 | 280 |
| BFOM (Baliga FOM, relative) | 650 | 1 | 15 | 130 |
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기술 사양
| 매개변수 | 사용 가능한 범위/값 |
|---|---|
| Base Substrate | C-plane sapphire (0001), 430μm or 650μm thickness |
| GaN Epi Thickness | 2μm, 3.5μm, 5μm, 8μm (custom on request) |
| Doping Options | UID (unintentionally doped), N-type Si-doped, P-type Mg-doped |
| Dislocation Density | < 5×10⁸/cm² (typical); < 1×10⁸/cm² (premium grade) |
| Sheet Resistance | N-type: 300–800 Ω/sq; UID: > 10⁶ Ω/sq |
| Surface Roughness | Ra < 0.5nm (AFM 5×5μm scan) |
| Wafer Bow | ≤ 40μm (4″); ≤ 80μm (6″); ≤ 120μm (8″) |
| Available Diameters | 2″ (50.8mm), 4″ (100mm), 6″ (150mm), 8″ (200mm) |
| AlN Buffer Layer | 20–30nm, included in all standard templates |
| XRD FWHM (0002) | < 300 arcsec (typical); < 200 arcsec (premium) |
| XRD FWHM (10-12) | < 500 arcsec (typical); < 350 arcsec (premium) |
| GaN Bandgap | 3.4 eV (direct, wurtzite crystal structure) |
| Sapphire Thermal Expansion | 7.5×10⁻⁶/K (a-axis); 8.5×10⁻⁶/K (c-axis) at 300K |
| Sapphire Refractive Index | nₒ = 1.768, nₑ = 1.760 at 633nm |
| Backside Finish | As-cut, lapped, or polished per customer specification |
| Laser Mark | SEMI M12/M13 compliant: soft-mark on front or back side |
| Particle Count @ 0.3μm | ≤ 20 particles (laser surface scan) |
| Packaging | Vacuum-sealed single-wafer containers, Class 100 cleanroom |
| Compliance | SEMI Standards, RoHS, REACH |
응용
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품질 및 인증
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