compoundIngotsSub.overline
compoundIngotsSub.pageTitle
compoundIngotsSub.pageDesc
compoundIngotsSub.statValue1 compoundIngotsSub.statLabel1
compoundIngotsSub.statValue2 compoundIngotsSub.statLabel2
compoundIngotsSub.statValue3 compoundIngotsSub.statLabel3
compoundIngotsSub.statValue4 compoundIngotsSub.statLabel4
compoundIngotsSub.headingMarket
compoundIngotsSub.overviewP1
compoundIngotsSub.overviewP2
compoundIngotsSub.calloutP
GaAs (Gallium Arsenide) compoundIngotsSub.ingotsLabel
compoundIngotsSub.material1Badge
compoundIngotsSub.material1Desc
compoundIngotsSub.growthMethodsLabel
VGF (Vertical Gradient Freeze)
compoundIngotsSub.material1Growth1Desc
LEC (Liquid-Encapsulated Czochralski)
compoundIngotsSub.material1Growth2Desc
2″ – 6″ (50 – 150 mm) Diameter
＜ 500 (VGF 4″), ＜ 5×10³ (LEC) EPD
＞ 10⁷ Ω·cm (SI-GaAs) Resistivity
VGF / LEC Growth
compoundIngotsSub.marketFocusLabel: compoundIngotsSub.material1MarketFocus
InP (Indium Phosphide) compoundIngotsSub.ingotsLabel
compoundIngotsSub.material2Badge
compoundIngotsSub.material2Desc
compoundIngotsSub.growthMethodsLabel
VGF (Vertical Gradient Freeze)
compoundIngotsSub.material2Growth1Desc
LEC (Liquid-Encapsulated Czochralski)
compoundIngotsSub.material2Growth2Desc
2″ – 4″ (50 – 100 mm) Diameter
＜ 5×10⁴/cm² (VGF) EPD
SI or N-type available Resistivity
VGF / LEC Growth
compoundIngotsSub.marketFocusLabel: compoundIngotsSub.material2MarketFocus
SiC (Silicon Carbide) compoundIngotsSub.ingotsLabel
compoundIngotsSub.material3Badge
compoundIngotsSub.material3Desc
compoundIngotsSub.growthMethodsLabel
PVT (Physical Vapor Transport)
compoundIngotsSub.material3Growth1Desc
4″ – 8″ (100 – 200 mm) Diameter
＜ 0.5/cm² (6″), ＜ 1/cm² (8″) MPD
4H-SiC / 6H-SiC Polytype
PVT Growth
compoundIngotsSub.marketFocusLabel: compoundIngotsSub.material3MarketFocus
Sapphire (Al₂O₃) compoundIngotsSub.ingotsLabel
compoundIngotsSub.material4Badge
compoundIngotsSub.material4Desc
compoundIngotsSub.growthMethodsLabel
Kyropoulos (KY)
compoundIngotsSub.material4Growth1Desc
EFG (Edge-Defined Film-Fed Growth)
compoundIngotsSub.material4Growth2Desc
HEM (Heat Exchanger Method)
compoundIngotsSub.material4Growth3Desc
2″ – 12″ (50 – 300 mm) Diameter
C-plane / R-plane / A-plane Orientation
Bubble-free (KY/HEM) Bubble Content
KY / EFG / HEM Growth
compoundIngotsSub.marketFocusLabel: compoundIngotsSub.material4MarketFocus
compoundIngotsSub.headingYield
compoundIngotsSub.yieldIntro
compoundIngotsSub.yieldCard1Title
compoundIngotsSub.yieldCard1Desc
compoundIngotsSub.yieldCard1Stat1 compoundIngotsSub.yieldCard1Stat2
compoundIngotsSub.yieldCard2Title
compoundIngotsSub.yieldCard2Desc
compoundIngotsSub.yieldCard2Stat1 compoundIngotsSub.yieldCard2Stat2
compoundIngotsSub.yieldCard3Title
compoundIngotsSub.yieldCard3Desc
compoundIngotsSub.yieldCard3Stat1 compoundIngotsSub.yieldCard3Stat2
compoundIngotsSub.headingLeadTimes
compoundIngotsSub.leadTimesIntro
| compoundIngotsSub.leadTh1 | compoundIngotsSub.leadTh2 | compoundIngotsSub.leadTh3 | compoundIngotsSub.leadTh4 |
|---|---|---|---|
| GaAs (VGF, 4″–6″) | compoundIngotsSub.leadGaAsLead | compoundIngotsSub.leadGaAsMoq | compoundIngotsSub.leadGaAsCycle |
| InP (VGF, 2″–4″) | compoundIngotsSub.leadInpLead | compoundIngotsSub.leadInpMoq | compoundIngotsSub.leadInpCycle |
| SiC (PVT, 6″–8″) | compoundIngotsSub.leadSiCLead | compoundIngotsSub.leadSiCMoq | compoundIngotsSub.leadSiCCycle |
| Sapphire (KY, 4″–12″) | compoundIngotsSub.leadSapphireLead | compoundIngotsSub.leadSapphireMoq | compoundIngotsSub.leadSapphireCycle |
compoundIngotsSub.leadTimesOutro
compoundIngotsSub.headingDoping
compoundIngotsSub.dopingIntro
compoundIngotsSub.dopingCard1Title
compoundIngotsSub.dopingCard1Desc
compoundIngotsSub.dopingCard2Title
compoundIngotsSub.dopingCard2Desc
compoundIngotsSub.dopingCard3Title
compoundIngotsSub.dopingCard3Desc
compoundIngotsSub.headingApplications
compoundIngotsSub.app1Title
compoundIngotsSub.app1Desc
compoundIngotsSub.app2Title
compoundIngotsSub.app2Desc
compoundIngotsSub.app3Title
compoundIngotsSub.app3Desc
compoundIngotsSub.app4Title
compoundIngotsSub.app4Desc
compoundIngotsSub.app5Title
compoundIngotsSub.app5Desc
compoundIngotsSub.app6Title
compoundIngotsSub.app6Desc
compoundIngotsSub.app7Title
compoundIngotsSub.app7Desc
compoundIngotsSub.app8Title
compoundIngotsSub.app8Desc
compoundIngotsSub.headingQualityCert
compoundIngotsSub.qualityCertIntro
compoundIngotsSub.metrology1Name compoundIngotsSub.metrology1Desc
compoundIngotsSub.metrology2Name compoundIngotsSub.metrology2Desc
compoundIngotsSub.metrology3Name compoundIngotsSub.metrology3Desc
compoundIngotsSub.metrology4Name compoundIngotsSub.metrology4Desc
compoundIngotsSub.metrology5Name compoundIngotsSub.metrology5Desc
compoundIngotsSub.metrology6Name compoundIngotsSub.metrology6Desc
compoundIngotsSub.metrology7Name compoundIngotsSub.metrology7Desc
compoundIngotsSub.metrology8Name compoundIngotsSub.metrology8Desc
compoundIngotsSub.headingTechSpecs
| compoundIngotsSub.specTh1 | compoundIngotsSub.specTh2 |
|---|---|
| GaAs Ingots | VGF/LEC, 2″ – 6″ diameter, SI / N-type / P-type, EPD ＜ 5×10³/cm², up to 300mm length |
| InP Ingots | VGF/LEC, 2″ – 4″ diameter, N-type SI available, EPD ＜ 5×10⁴/cm², up to 200mm length |
| SiC Ingots | PVT, 4″ – 8″ diameter, 4H-SiC & 6H-SiC, N-type & SI, MPD ＜ 1/cm², up to 50mm thickness |
| Sapphire Ingots | Kyropoulos / EFG / HEM, 2″ – 12″ diameter, C/R/A-plane, bubble-free, up to 500mm length |
| Doping Level | Per material specification and customer requirement |
| Crystal Orientation | On-axis or off-axis per specification |
| Surface | As-grown, ground, oriented flats/notches |
| Quality Documentation | Full CoA including XRD, EPD, resistivity mapping for each ingot |
| Traceability | Unique ingot ID, growth run history, seed lineage |
| Packaging | Custom crate with vibration isolation, nitrogen-purged container for hygroscopic materials (InP) |
| Compliance | SEMI Standards, RoHS, REACH, Conflict Minerals |
compoundIngotsSub.ctaHeading
compoundIngotsSub.ctaDesc