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Mono / Few-Layer grapheneOnSubstratesSub.statLabel1
Up to 150mm grapheneOnSubstratesSub.statLabel2
Rs 200–600 Ω/sq grapheneOnSubstratesSub.statLabel3
Trans. > 97% grapheneOnSubstratesSub.statLabel4
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- grapheneOnSubstratesSub.cvdLi1
- grapheneOnSubstratesSub.cvdLi2
- grapheneOnSubstratesSub.cvdLi3
- grapheneOnSubstratesSub.cvdLi4
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| 매개변수 | Graphene (CVD Monolayer) | ITO (In₂O₃:Sn) | Ag Nanowire Network |
|---|---|---|---|
| Material | Graphene (CVD monolayer) | ITO (In₂O₃:Sn) | Ag Nanowire Network |
| Sheet Resistance | 200–600 Ω/sq | 10–50 Ω/sq | 10–100 Ω/sq |
| Transparency (550nm) | > 97% | 85–92% | 85–92% |
| Flexibility | Excellent (bend radius < 1mm) | Poor (brittle, cracks at ~2% strain) | Good (bend radius ~3mm) |
| Mechanical Durability | Outstanding (tensile strength 130 GPa) | Fragile (ceramic, low fracture toughness) | Moderate (corrosion-prone) |
| Chemical Stability | Excellent (inert, acid/base resistant) | Moderate (acid-sensitive, In leaching) | Poor (Ag oxidation/sulfidation) |
| Thermal Conductivity | ~5,000 W/m·K (in-plane) | ~10 W/m·K | ~30 W/m·K |
| Raw Material Abundance | Carbon: abundant, low cost | Indium: critical raw material, supply risk | Silver: precious metal, price volatility |
| Process Temperature | CVD at ~1,000°C; transfer at RT | Sputter deposition at 200–400°C | Solution coating, anneal at 120–200°C |
| Scalability | Wafer-scale demonstrated (150mm); roll-to-roll emerging | Mature; large-area sputtering established | Roll-to-roll compatible; limited uniformity |
| Best For | Flexible, transparent, high-frequency; 2D heterostructures | Rigid touch screens, LCDs, low-cost TCO | Flexible touch, EMI shielding, heaters |
응용
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기술 사양
| 매개변수 | 사용 가능한 범위/값 |
|---|---|
| Graphene Type | Monolayer (> 95% coverage), Bilayer, Few-layer (3–5 layers), Reduced GO (rGO) |
| Substrate Options | SiO₂/Si (90nm/285nm/300nm oxide), Sapphire, Quartz, PET, PEN, Cu foil (as-grown) |
| Wafer Size | Up to 4″ (100mm), 6″ (150mm), custom sizes |
| CVD Growth Method | CVD on Cu foil, transfer to target substrate |
| Coverage | > 95% monolayer by Raman mapping |
| Sheet Resistance | 200–600 Ω/sq (monolayer, transferred) |
| Optical Transmission | > 97% at 550nm (monolayer) |
| Raman I₂D/I_G Ratio | > 2 for monolayer; < 0.5 D/G |
| 2D Peak FWHM | 25–35 cm⁻¹ for monolayer, Lorentzian fit |
| Mobility (FET) | FET mobility: 1,000–5,000 cm²/V·s on SiO₂/Si |
| Doping Level | As-transferred: p-type 10¹²–10¹³ cm⁻² |
| Grain Size | 10–50μm (standard CVD), up to 1mm (optimized) |
| Surface Roughness | Conforms to substrate; Si/SiO₂ roughness < 0.3nm RMS after transfer |
| Residue | PMMA minimized, thermal annealing available for cleaner surface |
| Packaging | Vacuum-sealed, desiccant pack, Class 100 |
품질 및 인증
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