기판
MEMS 프로세스
재처리
부속품
자원
기술 기사
회사
가게
2″ – 4″ Diameter indiumPhosphide.statLabel1
SI > 10⁷ Ω·cm indiumPhosphide.statLabel2
Epi-Ready < 2Å RMS indiumPhosphide.statLabel3
VGF / LEC Growth indiumPhosphide.statLabel4
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개요

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Diameter 2″ – 4″
EPD < 5×10³ – 5×10⁴/cm²
Resistivity SI & doped
Application Photonics / Laser

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Diameter 2″ – 6″
EPD 5×10⁴–1×10⁵/cm²
Resistivity SI & doped
Application Electronics / HBT

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기술 사양

매개변수사용 가능한 범위/값
Diameter 2″ (50.8mm), 3″ (76.2mm), 4″ (100mm)
Dopant Type N-type S-doped, N-type Sn-doped, SI Fe-doped, P-type Zn-doped
Resistivity N-type: 10⁻³–10⁻¹ Ω·cm; SI Fe-doped: > 10⁷ Ω·cm
Crystal Orientation (100), (111)A, (111)B, off-cut 2° or 3° toward (110)
Thickness 350μm, 500μm, 625μm standard (custom on request)
Surface Polish SSP, DSP, Epi-Ready — RMS < 2Å (AFM 5×5μm)
EPD (Etch Pit Density) < 5×10⁴/cm² (prime); < 5×10³/cm² (advanced grade)
TTV / Bow / Warp TTV < 5μm, Bow < 10μm, Warp < 15μm
Electron Mobility (μₑ) 5,400 cm²/V·s (N-type InP at 300K)
Bandgap 1.344 eV (direct, zincblende structure)
Thermal Conductivity 68 W/m·K at 300K
Growth Methods VGF (Vertical Gradient Freeze), LEC (Liquid-Encapsulated Czochralski)
Backside Treatment Etched, polished, or laser-marked per customer specification
Laser Mark SEMI M12/M13 compliant: soft-mark on front or back side
Flat Configuration Per SEMI M1: EJ or US standard flat per diameter
Particle Count @ 0.3μm ≤ 10 particles (laser surface scan)
Packaging Vacuum-sealed, single-wafer shippers, Class 100 cleanroom
Compliance SEMI M1–M13, RoHS, REACH

응용

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품질 및 인증

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ISO 9001:2015 SEMI M1–M13 indiumPhosphide.metaGrade RoHS / REACH