3D Package & HBM
Vertical die stacking with through-silicon vias — HBM4 stacks 16+ DRAM layers for 1.6 TB/s bandwidth, enabling the memory wall breakthrough for next-generation AI accelerators.
Обзор
3D packaging is the ultimate solution to the memory wall — the growing gap between logic performance and memory bandwidth. By stacking DRAM dies vertically and connecting them with through-silicon vias (TSVs), High-Bandwidth Memory (HBM) delivers orders of magnitude more bandwidth than traditional DDR interfaces while consuming significantly less power per bit. HBM4, the next-generation standard, pushes this to 16+ layers with 1.6 TB/s bandwidth per stack.
The 3D integration process involves multiple critical steps: TSV formation through each DRAM die, wafer thinning to <50μm to minimize stack height, micro-bump formation for die-to-die interconnects, and thermal compression bonding for stack assembly. GINECHIP provides the materials, wafers, and processing services that support every stage of the 3D integration flow, from TSV etch to final stack assembly.
Key Technology Features
Vertical Die Stacking
HBM stacks 4 to 16+ DRAM dies vertically, connected by TSVs and μ-bumps. The vertical topology minimizes interconnect length, reducing latency and power while maximizing bandwidth density. Each additional layer adds another channel of memory bandwidth.
TSV (Through-Silicon Via) Technology
TSVs with diameters as small as 5μm and depths of 50μm provide the vertical interconnects through each DRAM die. The TSV process requires deep silicon etching, sidewall passivation, barrier/seed deposition, and copper electroplating — all services GINECHIP supports.
Ultra-Thin Wafer Processing
Each DRAM die in the HBM stack is thinned to <50μm to minimize the total stack height. GINECHIP's Taiko grinding process achieves this with minimal edge chipping and warp, and our temporary bonding/debonding services enable safe handling of the fragile thin wafers.
μ-Bump Interconnects
Micro-bumps with pitch down to 10–40μm connect the stacked dies. These require precise under-bump metallization (UBM), bump formation, and reflow processes. GINECHIP provides the UBM materials and wafer bumping services for μ-bump fabrication.
GINECHIP Solutions
Silicon wafers optimized for TSV processing, with precise thickness control, low TTV, and resistivity specified for your TSV integration scheme (via-first, via-middle, or via-last).
Taiko-ground wafers with thickness <50μm, minimal edge chipping, and controlled warp. Compatible with temporary bonding/debonding for 3D stacking process flows.
Dummy wafers and mechanical test wafers for process development, and carrier wafers for temporary bonding during thin-wafer handling. Available in all standard diameters and thicknesses.
Cost-effective reclaimed wafers for 3D process development and test, meeting the same quality specifications as prime wafers. Ideal for TSV process qualification and stack assembly trials.
Target Applications
HBM is used in AI/ML accelerators (NVIDIA H100/H200/B200, AMD MI300X), HPC processors, high-end FPGAs, and networking ASICs. 3D stacking is also applied to CMOS image sensors, 3D NAND flash, and emerging applications like 3D-stacked logic (Intel Foveros, TSMC SoIC) and heterogeneous integration for mobile SoCs.
Scale Your 3D Integration
From TSV wafers and ultra-thin substrates to dummy wafers and carrier wafers, GINECHIP supplies the complete material set for your 3D packaging and HBM development.