MEMS и датчики — подложки и услуги | GINECHIP

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Обзор

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H 2Sensor Types

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Substrates: Si, SOI, Si-on-GlassKey processes: DRIE, wafer bondingStructures: comb-drive, tuning forkRange: ±2g to ±200g (accel)Range: ±100°/s to ±2000°/s (gyro)Diameters: 150mm, 200mm

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Substrates: Si, SOI, Si-on-GlassMembrane: Si or Si₃N₄ diaphragmPiezoresistive: doped Si strain gaugesCapacitive: sealed reference cavityRange: 1 kPa to 100 MPaAnodic/fusion bonding for cavity

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Substrates: Si wafers (150mm, 200mm)Membrane: poly-Si or Si₃N₄SNR: 60–73 dB(A)Key processes: sacrificial layer etchPackaging: wafer-level, bottom-portVolume: multi-billion units/year

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Substrates: SOI, Si, poly-SiFrequency: 1 MHz–625 MHzStability: ±0.1 ppm (TCXO class)Resonator: DETF, disk, ringProcess: DRIE + vacuum packagingWafer-level hermetic seal

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Substrates: Si, SOI, glassSensing film: SnO₂, WO₃, ZnOIntegrated micro-heater (MEMS hotplate)Power: < 15mW (pulsed operation)Detection: ppb-level for some gasesWafer-level packaging compatible

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Substrates: Si, glass, SOIMicrofluidics: PDMS, SU-8, glassSurface chemistry: silanization, PEGElectrodes: Au, Pt, ITO, TiNHermetic: anodic bonding, AuSn sealISO 13485 (medical devices)

H 2Substrate Guide

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H 2Process Services

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H 2Design

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H 2Packaging

MEMS packaging options include wafer-level capping (anodic, glass frit, metal eutectic), die-level hermetic ceramic packages, and plastic overmolded packages with cavity. Vacuum packaging down to < 1 mTorr is available for inertial sensors and resonators.

H 2Quality

Our quality management system is certified to ISO 9001:2015 with additional compliance to SEMI standards, RoHS, REACH, and Conflict Minerals regulations. Each shipment includes a certificate of conformance with lot traceability back to the original ingot.

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MEMS датчики