100mm–300mmStat Diam Range
50μm–725μmStat Thickness Range
TTV < 1μmStat Thickness Acc
SEMI M1 StandardStat Edge Profiles
Обзор
Overview Paragraph 1
Overview Paragraph 2
Heading Services
waferResizing.svc1Title
waferResizing.svc1Desc
Reduction: 200→150, 200→100, 150→100Other conversions by requestEdge: SEMI standard profileEdge chipping: < 0.3mmConcentricity: < 50μmWafer: Si, SOI, glass, ceramic
waferResizing.svc2Title
waferResizing.svc2Desc
Primary flat: SEMI M1 standardNotch: SEMI M1 standardOrientation accuracy: < 1°Length/depth per standardPost-machining edge polishWafer: Si, GaAs, InP, SiC
waferResizing.svc3Title
waferResizing.svc3Desc
Profiles: T, R, K (SEMI M1)Custom profiles by requestEdge polish: mechanical + CMPEdge roughness: Ra < 0.5μmMicro-crack eliminationPost-process edge inspection
waferResizing.svc4Title
waferResizing.svc4Desc
Method: grinding, lapping, CMPTarget: 50μm–725μmTTV: < 1μm (post-CMP)Bow/warp: within specificationStress relief etch optionalWafer: Si, SOI, glass, SiC
waferResizing.svc5Title
waferResizing.svc5Desc
Split: 1 wafer → multiple smallerCircular or rectangular formatsDicing or cleaving optionsEdge quality: minimal chippingCustom sizes: drawing-basedMaterial: Si, SOI, glass
waferResizing.svc6Title
waferResizing.svc6Desc
Method: XRD rocking curveAccuracy: < 0.1°Marking: new flat/notch or laserSi, GaAs, InP, SiC, sapphireReport: orientation confirmedPost-ID: laser mark if needed
Heading Edge Quality
Post-resize edge quality is verified by edge profile microscopy and surface roughness measurement. Edge chipping is maintained below SEMI specifications, and the edge profile is customized to match your equipment requirements for smooth handling.
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