Осаждение тонких пленок
Процессы PVD, CVD, ALD для оксидных, нитридных, металлических пленок.
Обзор
Осаждение тонких плёнок — основа производства полупроводниковых приборов.
PVD, CVD, ALD, ECD. Класс чистоты ISO 5. Контроль толщины < 1 нм.
Технологии осаждения
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Heading Film Mat
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Heading Quality Metrics
| Th Param | Th Target | Th Method |
|---|---|---|
| Qr 1Param | Qr 1Target | Qr 1Method |
| Qr 2Param | Qr 2Target | Qr 2Method |
| Qr 3Param | Qr 3Target | Qr 3Method |
| Qr 4Param | Qr 4Target | Qr 4Method |
| Qr 5Param | Qr 5Target | Qr 5Method |
| Qr 6Param | Qr 6Target | Qr 6Method |
| Qr 7Param | Qr 7Target | Qr 7Method |
| Qr 8Param | Qr 8Target | Qr 8Method |
Типичные применения
Поли-Si, SiO₂, Si₃N₄ для MEMS структур.
AR, HR покрытия. ITO. DBR зеркала.
Al, Ti/TiN, Cu затравка, Ta/TaN, Ni/Au.
Пассивация: Si₃N₄, парилен, ALD Al₂O₃.
AlN, ZnO, PZT для пьезо-применений.
NiCr, TaN, Pt резисторы и нагреватели.
Heading Multi Layer
Our multi-layer deposition capability enables complex thin-film stacks with precise thickness control. Each layer is deposited sequentially with in-situ monitoring, ensuring interlayer adhesion and interface quality.
Heading Sub Compat
Our reclaim processes support silicon wafers of all common dopant types, orientations, and diameters. We also offer reclaim for SOI, glass, and compound semiconductor substrates with dedicated process chemistries for each material system.
Обеспечение качества
Контроль напряжений < 50 МПа. Допуск показателя преломления ±0,005.
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