Силовая электроника SiC/GaN
SiC и GaN эпитаксиальные подложки для высоковольтных MOSFET и HEMT.
Обзор
Overview Paragraph 1
Overview Paragraph 2
H 2Sic Devices
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H 2Gan Devices
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H 2Comparison
| Property | Col Si | Col Sic | Col Gan |
|---|---|---|---|
| powerElectronicsSicGan.paramBandgap | 1.12 | 3.26 | 3.39 |
| powerElectronicsSicGan.paramCriticalField | 0.3 | 2.8 | 3.3 |
| powerElectronicsSicGan.paramElectronMobility | 1,400 | 1,000 | 1,250 (bulk) / 2,000 (2DEG) |
| powerElectronicsSicGan.paramThermalConductivity | 1.5 | 4.9 | 1.3 (bulk) / 4.9 (on SiC) |
| powerElectronicsSicGan.paramBaligaFOM | 1 | 340 | 870 |
| powerElectronicsSicGan.paramMaxJunctionTemp | 150–175 | 200–250 | 200–250 |
| powerElectronicsSicGan.paramWaferDiameter | 200mm, 300mm | 150mm, 200mm | 200mm (on Si) |
Table Note
H 2Applications
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H 2Substrate Quality
Substrate Quality Paragraph 1
Substrate Quality Paragraph 2
H 2Reliability
Environmental reliability testing includes temperature cycling, HAST, high-temperature storage, and mechanical shock per MIL-STD and JEDEC standards. Bonded wafer pairs are qualified for your application-specific environmental conditions.