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Обзор

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H 2Sic Devices

powerElectronicsSicGan.sic1Name

powerElectronicsSicGan.sic1Desc

Voltage: 650V, 1200V, 1700V, 3.3kVRDS(on): 15–80 mΩ (1200V)Tj(max): 175–200°CGate: planar or trenchBody diode: low Vf, fast recoveryDiameters: 100mm, 150mm

powerElectronicsSicGan.sic2Name

powerElectronicsSicGan.sic2Desc

Voltage: 650V, 1200V, 1700VCurrent: 2A–50A+ (per die)Qrr: near-zeroVf: 1.5V (typical @ rated I)Surge: 10× rated (MPS structure)JBS or MPS architectures

powerElectronicsSicGan.sic3Name

powerElectronicsSicGan.sic3Desc

Power: 10kW–300kW+Topology: half-bridge, 6-packBaseplate: AlSiC, CuSubstrate: AlN DBC, Si₃N₄ AMBCooling: liquid or forced airGate driver integration support

H 2Gan Devices

powerElectronicsSicGan.gan1Name

powerElectronicsSicGan.gan1Desc

Voltage: 100V, 650VRDS(on): 15–200 mΩQg: 1–10 nC (extremely low)Switching: >1 MHz capableGate: p-GaN e-modeWafer: 200mm Si (111)

powerElectronicsSicGan.gan2Name

powerElectronicsSicGan.gan2Desc

Voltage: 1.2kV–10kV (R&D)Substrate: semi-insulating 4H-SiCVertical or lateral CAVETCurrent: 1–50A (development)Thermal: 4.9 W/cm·K (SiC)Diameter: 100mm, 150mm

powerElectronicsSicGan.gan3Name

powerElectronicsSicGan.gan3Desc

Integration: FET + driver + protectionTopology: half-bridge, full-bridgeSwitching: up to 10 MHzVoltage: 48V–650VProtection: OCP, OTP, UVLOPackage: WLCSP, QFN

H 2Comparison

PropertyCol SiCol SicCol Gan
powerElectronicsSicGan.paramBandgap1.123.263.39
powerElectronicsSicGan.paramCriticalField0.32.83.3
powerElectronicsSicGan.paramElectronMobility1,4001,0001,250 (bulk) / 2,000 (2DEG)
powerElectronicsSicGan.paramThermalConductivity1.54.91.3 (bulk) / 4.9 (on SiC)
powerElectronicsSicGan.paramBaligaFOM1340870
powerElectronicsSicGan.paramMaxJunctionTemp150–175200–250200–250
powerElectronicsSicGan.paramWaferDiameter200mm, 300mm150mm, 200mm200mm (on Si)

Table Note

H 2Applications

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H 2Substrate Quality

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H 2Reliability

Environmental reliability testing includes temperature cycling, HAST, high-temperature storage, and mechanical shock per MIL-STD and JEDEC standards. Bonded wafer pairs are qualified for your application-specific environmental conditions.

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