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Обзор
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Технические характеристики
| Параметр | Доступный диапазон |
|---|---|
| Diameter | 2″ (50.8mm), 3″ (76.2mm), 4″ (100mm), 6″ (150mm) |
| Dopant Type | SI-Undoped, N-type Si-doped, P-type Zn-doped |
| Resistivity | SI: >10⁷ Ω·cm; N-type: 10⁻³–10⁻¹ Ω·cm |
| Crystal Orientation | (100), (111)A, (111)B, off-cut 2°–15° toward (110) |
| Thickness | 350μm, 500μm, 625μm standard (custom on request) |
| Surface Polish | SSP, DSP, Epi-Ready — RMS < 3Å (AFM 5×5μm) |
| EPD (Etch Pit Density) | < 5×10³/cm² (prime); < 5×10²/cm² (UHP grade) |
| TTV / Bow / Warp | TTV < 5μm, Bow < 10μm, Warp < 15μm |
| Electron Mobility (μₑ) | 8,500 cm²/V·s (undoped GaAs at 300K) |
| Bandgap | 1.424 eV (direct, Γ-valley) |
| Dislocation Density | Grade-dependent: prime < 5×10³/cm²; UHP < 5×10²/cm² |
| Growth Methods | VGF (Vertical Gradient Freeze), LEC (Liquid-Encapsulated Czochralski), HB (Horizontal Bridgman) |
| Backside Treatment | Etched, polished, or laser-marked per customer specification |
| Laser Mark | SEMI M12/M13 compliant: soft-mark on front or back side |
| Flat / Notch | Per SEMI M1: EJ (EJ-standard) or US flat configuration |
| Particle Count @ 0.3μm | ≤ 10 particles (laser surface scan, SEMI M53 equivalent) |
| Packaging | Vacuum-sealed single-wafer cassettes, Class 100 cleanroom |
| Compliance | SEMI M1–M13, RoHS, REACH, JEDEC |
Применения
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Качество и сертификация
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