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MEMSプロセス
再処理
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アプリケーション & リソース
ショップ 会社概要
100mm–300mmStat Diam Range
50μm–725μmStat Thickness Range
TTV < 1μmStat Thickness Acc
SEMI M1 StandardStat Edge Profiles

概要

当社の能力とサービスの包括的な概要

業界トップクラスの品質と精度を提供します

サービス内容

waferResizing.svc1Title

waferResizing.svc1Desc

Reduction: 200→150, 200→100, 150→100Other conversions by requestEdge: SEMI standard profileEdge chipping: < 0.3mmConcentricity: < 50μmWafer: Si, SOI, glass, ceramic

waferResizing.svc2Title

waferResizing.svc2Desc

Primary flat: SEMI M1 standardNotch: SEMI M1 standardOrientation accuracy: < 1°Length/depth per standardPost-machining edge polishWafer: Si, GaAs, InP, SiC

waferResizing.svc3Title

waferResizing.svc3Desc

Profiles: T, R, K (SEMI M1)Custom profiles by requestEdge polish: mechanical + CMPEdge roughness: Ra < 0.5μmMicro-crack eliminationPost-process edge inspection

waferResizing.svc4Title

waferResizing.svc4Desc

Method: grinding, lapping, CMPTarget: 50μm–725μmTTV: < 1μm (post-CMP)Bow/warp: within specificationStress relief etch optionalWafer: Si, SOI, glass, SiC

waferResizing.svc5Title

waferResizing.svc5Desc

Split: 1 wafer → multiple smallerCircular or rectangular formatsDicing or cleaving optionsEdge quality: minimal chippingCustom sizes: drawing-basedMaterial: Si, SOI, glass

waferResizing.svc6Title

waferResizing.svc6Desc

Method: XRD rocking curveAccuracy: < 0.1°Marking: new flat/notch or laserSi, GaAs, InP, SiC, sapphireReport: orientation confirmedPost-ID: laser mark if needed

エッジ品質管理

Post-resize edge quality is verified by edge profile microscopy and surface roughness measurement. Edge chipping is maintained below SEMI specifications, and the edge profile is customized to match your equipment requirements for smooth handling.

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