TTV / ボウ / ワープ測定

±0.2μm (k=2)Stat Ttv Accuracy

TTV · Bow · WarpStat Geometry Params

≥ 2,500 ptsStat Dense Grid

SEMI MF1390/1451/1530Stat Standards Compliant

概要

当社の能力とサービスの包括的な概要

業界トップクラスの品質と精度を提供します

Sec Measurement Services

ttvBowWarpMeasurement.geometrySvc1Name

ttvBowWarpMeasurement.geometrySvc1Desc

Capacitance gauge: 0.01μm resolution≥ 2,500 points per 300mm waferTTV reported: max-min (μm)Global metric, full waferSEMI MF1530 compliantNIST-traceable calibration

ttvBowWarpMeasurement.geometrySvc2Name

ttvBowWarpMeasurement.geometrySvc2Desc

Free-state measurement (no chuck)Optical profilometry / laser scanBow: warp in free statePositive (convex) or negative (concave)Resolution: 0.1μmSEMI MF1390 / MF1451 compliant

ttvBowWarpMeasurement.geometrySvc3Name

ttvBowWarpMeasurement.geometrySvc3Desc

Free-state measurementBest-fit plane referencePeak-to-valley: entire waferCaptures all shape deviationsResolution: 0.1μmSEMI MF1390 / MF1451 compliant

ttvBowWarpMeasurement.geometrySvc4Name

ttvBowWarpMeasurement.geometrySvc4Desc

Flatness = thickness variation (chucked)Shape = curvature (free state)Both must be specified for processIndependent measurement methodsComplementary quality metricsCritical for thin wafer handling

Sec Process Flow

ttvBowWarpMeasurement.flowStep1

ttvBowWarpMeasurement.flowStep1Desc

ttvBowWarpMeasurement.flowStep2

ttvBowWarpMeasurement.flowStep2Desc

ttvBowWarpMeasurement.flowStep3

ttvBowWarpMeasurement.flowStep3Desc

ttvBowWarpMeasurement.flowStep4

ttvBowWarpMeasurement.flowStep4Desc

ttvBowWarpMeasurement.flowStep5

ttvBowWarpMeasurement.flowStep5Desc

ttvBowWarpMeasurement.flowStep6

ttvBowWarpMeasurement.flowStep6Desc

Sec Quality Specs

パラメータ	Target Specification	Measurement Method
TTV Accuracy	± 0.2μm (k=2)	NIST-traceable thickness standards
TTV Repeatability	± 0.1μm (3σ)	Repeat measurements (30 cycles)
Bow Measurement Accuracy	± 1.0μm (k=2)	NIST-traceable optical flat reference
Warp Measurement Accuracy	± 1.5μm (k=2)	NIST-traceable optical flat reference
Bow/Warp Repeatability	± 0.5μm (3σ)	Repeat measurements on standard wafer
Measurement Speed (300mm)	TTV: 30 sec; Bow/Warp: 60 sec	Cycle time measurement
Environmental Control	23 ± 0.5°C; 45 ± 5% RH	NIST-traceable sensors, continuous log
Data Export Format	CSV, PDF report, SPC data package	LIMS data export module

上記の仕様は標準プロセスの標準値です。カスタム要件についてはお問い合わせください

Sec Measurement Methods

Cap Gauge Title

Cap Gauge Description

Optical Profilometry Title

Optical Profilometry Description

Sec Shape Vs Flatness

While flatness (TTV, STIR, SFQR) measures the thickness variation across the wafer, shape parameters (Bow, Warp) characterize the 3D deformation of the wafer independent of thickness. Understanding both is critical for lithography depth-of-focus budgets and wafer handling.

Sec Thin Wafer

Ultra-thin wafers below 200μm present unique metrology challenges due to gravitational sag and handling-induced deformation. We use specialized support fixtures and gravity-compensated measurement algorithms to achieve accurate measurements on thin and ultra-thin substrates.

Sec Data Output

Data Output Intro

Pdf Report Title

Pdf Report Description

Csv Export Title

Csv Export Description

アプリケーション

App Incoming QCTitle

App Incoming QCDesc

AQL sampling or 100% Supplier-independent verification Shipping damage detection NIST-traceable data

Sec Quality Assurance

Our metrology laboratory maintains ISO 17025 accreditation with NIST-traceable reference standards. All measurement equipment undergoes daily calibration verification with certified reference wafers, and our measurement uncertainty is documented for each parameter type.

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