パワーエレクトロニクス — SiC・GaN高電圧デバイス基板 | GINECHIP

先進半導体プラットフォーム技術

0.5μm解像度精度

月間1000枚以上生産能力

ISO 9001:2015認証

概要

当社の能力とサービスの包括的な概要

業界トップクラスの品質と精度を提供します

SiCデバイス

powerElectronicsSicGan.sic1Name

powerElectronicsSicGan.sic1Desc

Voltage: 650V, 1200V, 1700V, 3.3kVRDS(on): 15–80 mΩ (1200V)Tj(max): 175–200°CGate: planar or trenchBody diode: low Vf, fast recoveryDiameters: 100mm, 150mm

powerElectronicsSicGan.sic2Name

powerElectronicsSicGan.sic2Desc

Voltage: 650V, 1200V, 1700VCurrent: 2A–50A+ (per die)Qrr: near-zeroVf: 1.5V (typical @ rated I)Surge: 10× rated (MPS structure)JBS or MPS architectures

powerElectronicsSicGan.sic3Name

powerElectronicsSicGan.sic3Desc

Power: 10kW–300kW+Topology: half-bridge, 6-packBaseplate: AlSiC, CuSubstrate: AlN DBC, Si₃N₄ AMBCooling: liquid or forced airGate driver integration support

GaNデバイス

powerElectronicsSicGan.gan1Name

powerElectronicsSicGan.gan1Desc

Voltage: 100V, 650VRDS(on): 15–200 mΩQg: 1–10 nC (extremely low)Switching: >1 MHz capableGate: p-GaN e-modeWafer: 200mm Si (111)

powerElectronicsSicGan.gan2Name

powerElectronicsSicGan.gan2Desc

Voltage: 1.2kV–10kV (R&D)Substrate: semi-insulating 4H-SiCVertical or lateral CAVETCurrent: 1–50A (development)Thermal: 4.9 W/cm·K (SiC)Diameter: 100mm, 150mm

powerElectronicsSicGan.gan3Name

powerElectronicsSicGan.gan3Desc

Integration: FET + driver + protectionTopology: half-bridge, full-bridgeSwitching: up to 10 MHzVoltage: 48V–650VProtection: OCP, OTP, UVLOPackage: WLCSP, QFN

材料比較

Property	Si	SiC	GaN
powerElectronicsSicGan.paramBandgap	1.12	3.26	3.39
powerElectronicsSicGan.paramCriticalField	0.3	2.8	3.3
powerElectronicsSicGan.paramElectronMobility	1,400	1,000	1,250 (bulk) / 2,000 (2DEG)
powerElectronicsSicGan.paramThermalConductivity	1.5	4.9	1.3 (bulk) / 4.9 (on SiC)
powerElectronicsSicGan.paramBaligaFOM	1	340	870
powerElectronicsSicGan.paramMaxJunctionTemp	150–175	200–250	200–250
powerElectronicsSicGan.paramWaferDiameter	200mm, 300mm	150mm, 200mm	200mm (on Si)

上記の仕様は標準プロセスの標準値です。カスタム要件についてはお問い合わせください

アプリケーション

powerElectronicsSicGan.app1Title

powerElectronicsSicGan.app1Desc

powerElectronicsSicGan.app2Title

powerElectronicsSicGan.app2Desc

powerElectronicsSicGan.app3Title

powerElectronicsSicGan.app3Desc

powerElectronicsSicGan.app4Title

powerElectronicsSicGan.app4Desc

powerElectronicsSicGan.app5Title

powerElectronicsSicGan.app5Desc

powerElectronicsSicGan.app6Title

powerElectronicsSicGan.app6Desc

基板品質

Substrate Quality Paragraph 1

Substrate Quality Paragraph 2

信頼性

Environmental reliability testing includes temperature cycling, HAST, high-temperature storage, and mechanical shock per MIL-STD and JEDEC standards. Bonded wafer pairs are qualified for your application-specific environmental conditions.

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パワーエレクトロニクス SiC/GaN

概要