フォトニクスとLiDAR
シリコンフォトニクス、VCSELアレイ、導波路基板、LiDARエミッター/レシーバーウェーハ。
概要
当社の能力とサービスの包括的な概要
業界トップクラスの品質と精度を提供します
材料プラットフォーム
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LiDAR 技術
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SOI仕様
| パラメータ | 標準 | アドバンスド |
|---|---|---|
| デバイス層 | 220nm ± 5nm | 220nm ± 2nm (or custom) |
| BOX層 | 2.0μm ± 5% | 2.0μm ± 2% (or 3.0μm) |
| ハンドル | 725μm Si (100) | 725μm HR-Si (>1kΩ·cm) |
| Si均一性 | < 2nm (1σ) | < 1nm (1σ) |
| BOX均一性 | < 1% (1σ) | < 0.5% (1σ) |
| 直径 | 200mm | 200mm, 300mm |
| 表面粗さ | < 0.2nm RMS | < 0.15nm RMS |
| パーティクル | < 20 @ 0.12μm | < 10 @ 0.09μm |
上記の仕様は標準プロセスの標準値です。カスタム要件についてはお問い合わせください
アプリケーション
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導波路技術
Silicon and silicon nitride waveguide platforms available with propagation losses as low as 0.5 dB/cm. Single-mode and multi-mode waveguide designs supported. Our photolithography and etching processes achieve vertical sidewalls with roughness below 5nm RMS for low scattering loss.
エピタキシャル品質
Epitaxial layers are characterized by photoluminescence mapping, X-ray diffraction rocking curve analysis, and surface defect density measurement. We guarantee epi-layer uniformity within 2% across the entire wafer, with RMS surface roughness below 0.2nm.