מדריך תכונות חומרים — אסמכתא לתכונות מצעי מוליכים למחצה

תכונות חומרי מצע ושכבה דקה

מדריך עזר מהיר לתכונות החשמליות, המכניות והתרמיות של חומרי המצע והשכבה הדקה שאנו מספקים, כדי לעזור לך לבחור את החומר הנכון ליישום שלך.

Silicon (Si)

Substrate

Bandgap: 1.12 eVThermal conductivity: 150 W/m·KMobility (e): 1400 cm²/V·sDensity: 2.33 g/cm³Young's modulus: 130–188 GPaThermal expansion: 2.6 ppm/KRefractive index: 3.42 (@ 1.5μm)Melting point: 1414°C

Thermal SiO₂

Dielectric

Bandgap: ~9 eVBreakdown field: > 10 MV/cm (dry)Dielectric constant: 3.9Density: 2.20 g/cm³Refractive index: 1.46 (@633nm)Thermal conductivity: 1.4 W/m·KCTE: 0.5 ppm/KEtch: BOE or HF based

Si₃N₄ (Stoichiometric)

Dielectric

Bandgap: ~5 eVResistivity: 10¹⁶ Ω·cmDielectric constant: 7.5Stress: 0.8–1.2 GPa (tensile)Refractive index: 2.0 (@633nm)Density: 3.17 g/cm³Young's modulus: 250 GPaEtch: hot H₃PO₄ at 160°C

Al₂O₃ (Sapphire/ALD)

Dielectric

Bandgap: 6.5–7.0 eVDielectric constant: 8.0–9.5Breakdown field: 15–20 MV/cmDensity: 3.97 g/cm³Thermal conductivity: 25–40 W/m·KRefractive index: 1.76 (@633nm)CTE: 5.3 ppm/K (sapphire)Etch: BCl₃/Cl₂ RIE

Gallium Arsenide (GaAs)

Substrate

Bandgap: 1.42 eV (direct)Mobility (e): 8500 cm²/V·sDensity: 5.32 g/cm³Thermal conductivity: 55 W/m·KCTE: 5.73 ppm/KBreakdown field: 0.4 MV/cmRefractive index: 3.4 (@ 1.5μm)Melting point: 1238°C

Indium Phosphide (InP)

Substrate

Bandgap: 1.34 eV (direct)Mobility (e): 5400 cm²/V·sDensity: 4.81 g/cm³Thermal conductivity: 68 W/m·KCTE: 4.75 ppm/KBreakdown field: 0.5 MV/cmRefractive index: 3.2 (@ 1.5μm)Melting point: 1062°C

4H-SiC

Substrate

Bandgap: 3.26 eVMobility (e): 1000 cm²/V·sBreakdown field: 2.5–3.0 MV/cmThermal conductivity: 370–490 W/m·KCTE: 3.2 ppm/K (a-axis)Density: 3.21 g/cm³Refractive index: 2.6 (@633nm)Sublimation: ~2700°C

GaN (on SiC/Si)

Substrate

Bandgap: 3.4 eV (WZ)Mobility 2DEG: 1500–2200 cm²/V·sBreakdown field: 3.3 MV/cmThermal conductivity: 130–200 W/m·KCTE: 3.17 ppm/K (a-axis, bulk)Density: 6.15 g/cm³Saturation velocity: 2.5×10⁷ cm/sMelting point: > 2500°C

Borosilicate Glass (Pyrex®)

Substrate

CTE: 3.25 ppm/K (matched to Si)Anodic bonding: 300–500°CDensity: 2.23 g/cm³Young's modulus: 63 GPaTg (softening): 821°CDielectric constant: 4.6 (@1MHz)Refractive index: 1.47 (@633nm)Na content: ~4% (enables anodic bonding)

Fused Silica / Quartz

Substrate

CTE: 0.55 ppm/KDensity: 2.20 g/cm³Young's modulus: 73 GPaRefractive index: 1.46 (@633nm)Transmission: > 85% (UV–NIR)Tg: ~1200°CDielectric constant: 3.8 (@1MHz)Excellent UV transparency

Aluminum (Al, metallization)

Metal

Resistivity: 2.65 μΩ·cmMelting point: 660°CCTE: 23.1 ppm/KDensity: 2.70 g/cm³Adhesion: Ti or Cr interlayerEtch: Cl₂/BCl₃ RIEDeposition: PVD sputteringTypical thickness: 0.5–3μm

Gold (Au, electrode/bond pad)

Metal

Resistivity: 2.44 μΩ·cmMelting point: 1064°CCTE: 14.2 ppm/KDensity: 19.3 g/cm³Adhesion: Cr or Ti interlayerEtch: Ar ion milling or KI/I₂Deposition: e-beam or sputterWire bond: Au or Al wire

כיצד להשתמש במדריך זה

Material selection is a multi-parameter optimization problem. The key property decisions depend on your application: for power devices — prioritize bandgap, breakdown field, thermal conductivity; for RF/mmWave — electron mobility, saturation velocity, substrate resistivity; for MEMS — Young's modulus, residual stress, CTE match to device layers; for photonics — refractive index, optical transparency window, electro-optic coefficient; for packaging — CTE match to die, thermal conductivity, dielectric constant.

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