Ginechip — Premium Supplier of Germanium & Graphene Materials
High-performance germanium substrates and CVD graphene on various substrates for semiconductors, IR optics, and next-generation electronics
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Germanium (Ge)
Germanium (Ge) is a high-mobility semiconductor substrate with diamond cubic crystal structure, offering superior electron and hole mobilities compared to silicon (electron mobility ~3900 cm²/V·s, hole ~1900 cm²/V·s). This enables faster carrier transport, making Ge ideal for high-performance transistors, infrared detectors, and optoelectronic devices. With a narrow bandgap of 0.66 eV at 300K, Ge provides excellent IR transparency from 1.8 to 23 μm and high refractive index (~4.0 at 10.6 μm), perfect for thermal imaging lenses, windows, and beamsplitters in CO₂ laser systems. Grown via Czochralski method, our Ge wafers achieve low dislocation density (EPD near zero in high-quality material), excellent lattice matching to GaAs/AlAs for epitaxial growth in III-V solar cells and VCSELs, and thermal expansion coefficient closely matched to GaAs (~5.9 × 10⁻⁶/K). Available in diameters up to 200–300 mm, thicknesses from 175–725 μm, with <100>, <111>, or <110> orientations, and optional n/p doping. Applications include multi-junction solar cells, SWIR photodiodes, high-speed electronics, and radiation-hardened devices. Ginechip supplies traceable, high-purity Ge with full metrology (resistivity mapping, FTIR transmission, surface roughness Ra <5 Å). Choose our germanium Ge wafers for unmatched electrical performance, IR optical clarity, and compatibility in advanced photonics and semiconductor fabrication.
| Parameter | Specification | Unit |
|---|---|---|
| Chemical Formula | Ge | — |
| Density | 5.323–5.33 | g/cm³ |
| Melting Point | 938 | °C |
| Bandgap (300K) | 0.66 | eV |
| Electron Mobility | ~3900 | cm²/V·s |
| Hole Mobility | ~1900 | cm²/V·s |
| Thermal Expansion | 5.9 × 10⁻⁶ | /K |
| Thermal Conductivity | 58–60 | W/m·K |
| Refractive Index (10.6 μm) | ~4.00 | — |
| Dielectric Constant | 16.2–16.6 | — |
| Diameter | 50–300 | mm |
| Thickness | 175–725 | μm |
| Orientation | <100>, <111>, <110> | — |
| Surface Finish | SSP / DSP, Ra ≤5 Å | — |
Graphene on Substrates
Graphene on substrates, typically produced via chemical vapor deposition (CVD) and transferred using wet or dry methods, delivers atomically thin (monolayer ~3.4 Å) carbon sheets with exceptional electrical, thermal, and optical properties. Our CVD graphene features high carrier mobility (>3000 cm²/V·s after transfer), low defect density (ID/IG <0.05 in Raman), and excellent uniformity across large areas. Transferred onto SiO₂/Si, quartz, PET, or other insulating substrates, it achieves sheet resistance of 350–1000 Ω/sq (tunable by doping/layer count) with visible transparency ~97–97.7% for monolayer (absorbing ~2.3% light). Key advantages include mechanical flexibility, chemical stability, and compatibility with patterning/transfer processes (PMMA-assisted wet etch or dry lamination). Applications encompass transparent conductive electrodes in touchscreens/OLEDs/flexible displays, gas/chemical sensors, high-frequency transistors, supercapacitors, and thermal management layers. Ginechip offers monolayer or few-layer graphene on various substrates with optional doping for lower resistance, full characterization (Raman, SEM, four-point probe, UV-Vis transmission), and cleanroom packaging. Rely on our graphene on substrates for superior conductivity-transparency balance, enabling innovative flexible electronics, optoelectronics, and energy devices with high performance and scalability.
| Parameter | Specification | Unit |
|---|---|---|
| Graphene Layers | Monolayer (typical) / Few-layer | — |
| Sheet Resistance (on SiO₂/Si) | 350–1000 | Ω/sq |
| Visible Transparency (550 nm) | ~97–97.7 | % |
| Carrier Mobility (after transfer) | >3000 | cm²/V·s |
| Raman ID/IG Ratio | <0.05 | — |
| 2D Peak FWHM | ~35 | cm⁻¹ |
| Substrate Options | SiO₂/Si, Quartz, PET, Glass, Sapphire | — |
| Transfer Method | Wet (PMMA) / Dry lamination | — |
| Graphene Thickness | ~3.45 (monolayer) | Å |
| Defect Density | Low (high-quality CVD) | — |
| Applications | Transparent Electrodes / Sensors / Flexible Electronics | — |
| Quality Control | Raman, SEM, Optical, Electrical | — |