Ginechip — Distributor of Advanced Dielectric Films & Functional Substrates
High-performance TEOS oxides, ferroelectric crystals, transparent conductors, and SOS for next-gen electronics and photonics
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TEOS Oxide on Silicon
TEOS (Tetraethyl orthosilicate) oxide films deposited on silicon wafers via CVD or PECVD processes deliver high-quality silicon dioxide (SiO₂) layers with superior conformality, excellent gap-fill capability, and low particle generation. These films are widely used as inter-layer dielectrics (ILD), pre-metal dielectrics (PMD), shallow trench isolation (STI) liners, and passivation layers in semiconductor manufacturing. TEOS-based oxides offer refractive index around 1.46, low stress after densification, and high breakdown strength (>8 MV/cm). Deposition at 300–750°C (depending on APCVD, LPCVD, or PECVD) ensures good step coverage for sub-micron features, with uniformity better than ±2–3% across 300 mm wafers. Post-deposition densification at 800–1100°C reduces hydrogen content (<0.2%) and stabilizes mechanical properties, minimizing cracking in thick films (>10 μm). Our TEOS oxide wafers feature tight thickness control, low defect density, and compatibility with CMP planarization. Applications include advanced CMOS logic, power devices, MEMS, and optical waveguides. Ginechip supplies wafers with full metrology reports including ellipsometry thickness maps, stress measurements, and breakdown testing. Rely on our TEOS oxide on silicon for reliable dielectric performance, high yield, and process integration in cutting-edge semiconductor fabrication.
| Parameter | Specification | Unit |
|---|---|---|
| Deposition Method | PECVD / LPCVD / APCVD | — |
| Thickness Range | 50 nm – 20 μm | — |
| Thickness Uniformity | ±2–3% | — |
| Refractive Index | 1.44–1.46 | — |
| Deposition Temperature | 300–750 | °C |
| Stress (post-densification) | Compressive / Tunable | MPa |
| Breakdown Voltage | >8 | MV/cm |
| Hydrogen Content (after anneal) | <0.2 | % |
| Step Coverage | Excellent (high aspect ratio) | — |
| Wafer Diameter | 150 / 200 / 300 | mm |
| Surface Roughness | <1 | nm |
| Dielectric Constant | ~3.9 | — |
| Densification Temp | 800–1100 | °C |
| Applications | ILD / PMD / STI / Passivation | — |
Lithium Niobate (LiNbO₃)
Lithium Niobate (LiNbO₃) is a versatile ferroelectric crystal renowned for its exceptional electro-optic, nonlinear optical, piezoelectric, and acousto-optic properties. Grown via Czochralski method, congruent or stoichiometric compositions are available with low defect density and high optical homogeneity. LiNbO₃ exhibits a high electro-optic coefficient (r₃₃ ≈ 30 pm/V), broad transparency from 350 nm to 5 μm, and strong second-harmonic generation efficiency. Wafers are oriented in X-cut, Y-cut, Z-cut, or rotated cuts (e.g., 128°Y, 64°Y) for optimized SAW or optical waveguide performance. Key features include high Curie temperature (~1140°C), excellent mechanical stability, and low propagation loss in integrated photonics. Applications span high-speed electro-optic modulators, Q-switches, frequency doublers, SAW filters in 5G/RF devices, holographic storage, and quantum optics. Ginechip offers 3–8 inch diameters, thicknesses from 0.25–1 mm, double-side polished surfaces, and optional MgO doping for reduced photorefractive damage. Full characterization includes X-ray orientation, bubble/inclusion inspection, and transmission data. Trust Ginechip for premium lithium niobate LiNbO₃ substrates enabling high-performance photonic and acoustic devices with superior reliability.
| Parameter | Specification | Unit |
|---|---|---|
| Chemical Formula | LiNbO₃ | — |
| Crystal Structure | Trigonal (3m) | — |
| Density | 4.65 | g/cm³ |
| Curie Temperature | 1133–1142 | °C |
| Transparency Range | 0.35–5 | μm |
| Refractive Index (632.8 nm) | nₒ≈2.286, nₑ≈2.200 | — |
| Electro-Optic Coefficient r₃₃ | 30.8 | pm/V |
| Dielectric Constant (ε₁₁) | 85 | — |
| Diameter | 76.2–200 | mm |
| Thickness | 0.25–1.0 | mm |
| Surface Finish | Double-side polished | — |
| Orientation Accuracy | ±0.2° | — |
| Bubble/Inclusion | <100 μm, qty <8 | — |
| Applications | Modulators / SAW / Nonlinear Optics | — |
Lithium Tantalate (LiTaO₃)
Lithium Tantalate (LiTaO₃) is a high-performance ferroelectric crystal prized for its piezoelectric, pyroelectric, and electro-optic characteristics, often used as a cost-effective alternative or complement to LiNbO₃. With a higher Curie temperature (~665°C) and lower acoustic velocity, LiTaO₃ excels in high-frequency SAW devices requiring temperature stability and low insertion loss. The material offers excellent optical transparency in visible-IR, high dielectric constant, and strong electromechanical coupling. Wafers are typically 36°Y-cut, 42°Y-cut, or X-cut for optimized SAW filters in mobile communications, RF modules, and sensors. Low defect levels and uniform properties ensure high Q-factors and reliability in 5G/6G front-end modules. Ginechip provides 3–6 inch diameters, thicknesses 0.25–0.5 mm, double-polished surfaces, and optional black (reduced pyroelectric) variants. Every wafer includes orientation verification, surface metrology, and chemical purity certification. Choose Ginechip's lithium tantalate LiTaO₃ for advanced acoustic wave devices and pyroelectric sensors with outstanding performance and consistency.
| Parameter | Specification | Unit |
|---|---|---|
| Chemical Formula | LiTaO₃ | — |
| Density | 7.46 | g/cm³ |
| Curie Temperature | ~665 | °C |
| Transparency Range | Visible to IR | — |
| Dielectric Constant | ~43 | — |
| Piezoelectric Coupling | High (orientation dependent) | — |
| Diameter | 76.2–150 | mm |
| Thickness | 0.25–0.5 | mm |
| Surface Finish | Double-side polished | — |
| Orientation | 36°Y, 42°Y, X-cut | — |
| Pyroelectric Effect | Reduced in black variants | — |
| Applications | SAW Filters / Sensors / Pyroelectric | — |
| Acoustic Velocity | Lower than LiNbO₃ | — |
ITO-Coated Glass/Substrates
Indium Tin Oxide (ITO) coated glass and substrates provide transparent conductive layers essential for touchscreens, OLEDs, solar cells, EMI shielding, and electro-optic devices. Sputtered ITO films offer low sheet resistance (5–100 Ω/sq tunable by thickness), high visible transmission (>83–90%), and excellent uniformity. Typical film thicknesses range 100–200 nm on soda-lime, borosilicate, or quartz substrates, with refractive index ~1.9–2.0. Key advantages include chemical stability, mechanical durability, and compatibility with patterning processes. Ginechip supplies pre-cut or full-sheet formats with sheet resistance options from low-ohmic (high conductivity) to higher values (higher transparency). Full characterization includes four-point probe mapping, transmission spectra (300–1100 nm), and adhesion testing. Applications span capacitive touch panels, flat-panel displays, transparent heaters, and photovoltaic electrodes. Our ITO-coated products deliver consistent performance for ITO coated glass substrates, balancing conductivity and optical clarity in demanding optoelectronic applications.
| Parameter | Specification | Unit |
|---|---|---|
| Sheet Resistance | 5–100 (customizable) | Ω/sq |
| ITO Thickness | 100–200 | nm |
| Visible Transmission | >83–90 | % |
| Substrate Thickness | 0.7–1.1 | mm |
| Substrate Material | Soda-lime / Borosilicate / Quartz | — |
| Refractive Index (ITO) | 1.9–2.0 | — |
| Surface Roughness | <2 | nm |
| Adhesion | Excellent (tape test pass) | — |
| Uniformity | ±5–10% | — |
| Substrate Size | Custom / Standard slides | — |
| Applications | Touchscreens / OLED / Solar / Shielding | — |
| Deposition Method | Sputtering | — |
Silicon on Sapphire (SOS)
Silicon on Sapphire (SOS) combines a thin epitaxial silicon layer on a high-purity sapphire (Al₂O₃) substrate, delivering superior electrical isolation, high thermal conductivity, and radiation hardness. The heteroepitaxial structure (typically R-plane sapphire with (100) Si) minimizes parasitic capacitance, enabling high-speed, low-power CMOS circuits. SOS offers excellent dielectric properties (sapphire ε_r ≈9.4), low microwave loss, and tolerance to extreme temperatures and radiation environments. Silicon layer thicknesses range 50 nm–1 μm with tight uniformity and low defect density after optimized growth and anneal. Key benefits include reduced self-heating, high breakdown voltage, and compatibility with standard CMOS processing. Applications include RF/microwave ICs, aerospace electronics, high-temperature sensors, pressure transducers, and optoelectronic integration. Ginechip supplies 3–8 inch SOS wafers with full traceability, TTV <1 μm, and surface finish options. Rely on our silicon on sapphire SOS for robust, high-performance substrates in harsh-environment and high-frequency electronics.
| Parameter | Specification | Unit |
|---|---|---|
| Substrate Material | Sapphire (Al₂O₃) | — |
| Silicon Thickness | 50 nm – 1 μm | — |
| Orientation | (100) Si on R-plane sapphire | — |
| TTV | <1 | μm |
| Thermal Conductivity | ~46 (sapphire) | W/m·K |
| Dielectric Constant (substrate) | 9.4 | — |
| Diameter | 100–200 | mm |
| Radiation Hardness | High | — |
| Parasitic Capacitance | Very low | — |
| Max Temperature | >1000 | °C |
| Applications | RF CMOS / Aerospace / Sensors | — |
| Defect Density | Low (post-optimization) | — |