Ginechip — Premium Distributor of Advanced Optical & Substrate Materials
High-purity fused silica, borosilicate, sapphire, and single crystal quartz for demanding applications
Request Quote →Explore Materials
Fused Silica / Quartz
Fused silica, also known as fused quartz, is a high-purity, non-crystalline form of silicon dioxide (SiO₂) produced by melting high-quality quartz sand or synthetic silica at extremely high temperatures. This amorphous structure results in exceptional optical transparency from the deep ultraviolet (~160 nm) through the visible to the near-infrared (~3.5 μm), with very low absorption and scattering. Key advantages include an ultra-low coefficient of thermal expansion (~0.55 × 10⁻⁶/K from 20–300°C), providing outstanding thermal shock resistance and dimensional stability under rapid temperature changes. Mechanical properties feature high compressive strength (>1,000 MPa) and good hardness (Mohs 5.5–7), while maintaining excellent chemical inertness against most acids (except HF) and excellent electrical insulation (dielectric constant ~3.8). Fused silica finds widespread use in precision optics, laser systems, semiconductor processing equipment (e.g., furnace tubes, windows), UV lithography, fiber optics, and high-temperature applications up to 1,100–1,300°C short-term. Ginechip supplies synthetic and fused grades with controlled OH content (<5–200 ppm depending on grade), minimal bubbles/inclusions, and high homogeneity for demanding photonics and metrology needs. Our materials undergo rigorous inspection for striae, homogeneity (Δn < 1 ppm), and transmission, ensuring traceability and compliance with industry standards. Choose Ginechip for fused silica quartz that delivers superior performance in extreme environments, enabling higher yields and reliability in advanced manufacturing.
| Parameter | Specification | Unit |
|---|---|---|
| Chemical Formula | SiO₂ | — |
| Density | 2.20–2.23 | g/cm³ |
| Thermal Expansion (20–300°C) | 0.55 × 10⁻⁶ | /K |
| Softening Point | ~1683–1730 | °C |
| Annealing Point | ~1215 | °C |
| Thermal Conductivity (20°C) | 1.4 | W/m·K |
| Young's Modulus | 72–75 | GPa |
| Poisson's Ratio | 0.17 | — |
| Refractive Index (589 nm) | 1.4585 | — |
| Transmission Range | 0.16–3.5 | μm |
| OH Content (typical) | <5 to ~200 | ppm |
| Dielectric Constant (1 MHz) | 3.78 | — |
| Max Use Temperature (short-term) | 1100–1300 | °C |
| Bubbles/Inclusions | Minimal / Grade-dependent | — |
Borofloat 33 Glass
Borofloat 33 is a high-quality floated borosilicate glass (Type 3.3 per ISO 3585) manufactured by SCHOTT using the micro-float process, delivering exceptional flatness, homogeneity, and mirror-like surfaces. With a low coefficient of linear thermal expansion (3.25 × 10⁻⁶/K from 20–300°C), it offers three times the thermal shock resistance of soda-lime glass, making it ideal for applications requiring thermal stability up to 450°C long-term and 500°C short-term. The material exhibits excellent chemical durability (hydrolytic class HGB1, acid/alkali resistance), high optical transmission across UV-visible-IR, and good electrical insulation properties. Borofloat 33 features a density of 2.23 g/cm³ (lower than soda-lime), Young's modulus of 64 GPa, and bending strength of ~25 MPa. It is widely used in semiconductor processing, display technology, optical filters, sight glasses for chemical reactors, pyrex alternatives in lighting, microfluidic devices, and high-temperature lighting covers. Ginechip stocks standard thicknesses with tight tolerances and provides full certification including transmission data, stress birefringence, and chemical resistance reports. Its environmental friendliness (recyclable, low raw material impact) and compatibility with silicon make it a preferred substrate for anodic bonding and MEMS fabrication. Rely on Ginechip for Borofloat 33 glass that combines reliability, precision, and cost-effectiveness in demanding technical applications.
| Parameter | Specification | Unit |
|---|---|---|
| Density (25°C) | 2.23 | g/cm³ |
| Thermal Expansion (20–300°C) | 3.25 × 10⁻⁶ | /K |
| Transformation Temperature Tg | 525–530 | °C |
| Softening Point | ~820 | °C |
| Young's Modulus | 64 | GPa |
| Poisson's Ratio | 0.2 | — |
| Refractive Index nd | 1.472 | — |
| Dielectric Constant (1 MHz) | 4.6 | — |
| Thermal Conductivity (90°C) | 1.2 | W/m·K |
| Specific Heat Capacity (20–100°C) | 0.83 | kJ/kg·K |
| Max Operating Temp (long-term) | 450 | °C |
| Resistance to Thermal Shock | 140–175 (thickness-dependent) | K |
| Chemical Resistance (Acid) | High (ISO 1776 Class 1) | — |
| Bending Strength | 25 (normal conditions) | MPa |
Sapphire (Al₂O₃)
Single crystal sapphire (Al₂O₃) is a premium synthetic corundum grown via the Czochralski or Kyropoulos method, offering unmatched hardness (Mohs 9, Knoop 2000–2200), exceptional mechanical strength, and broad optical transparency from deep UV (~0.17 μm) to mid-IR (~5.5 μm). With a high melting point (~2040°C), excellent thermal conductivity (27–30 W/m·K at RT), and low thermal expansion (5.0–5.6 × 10⁻⁶/K anisotropic), sapphire provides superior scratch resistance, thermal stability, and dielectric performance (dielectric constant 9.4–11.5). It exhibits negligible water absorption, high chemical inertness, and radiation hardness, making it ideal for harsh environments. Applications span optical windows for high-power lasers, LED substrates, watch crystals, semiconductor wafer carriers, IR detectors, medical instruments, and aerospace components. Ginechip supplies A-plane, C-plane, R-plane orientations with ultra-smooth surfaces (Ra <0.5 nm) and low dislocation density. Every wafer includes full metrology for orientation accuracy, flatness, and transmission. Our sapphire ensures the highest quality for sapphire Al2O3 in precision optics and extreme-condition applications, delivering durability and clarity unmatched by other materials.
| Parameter | Specification | Unit |
|---|---|---|
| Chemical Formula | Al₂O₃ | — |
| Density | 3.98 | g/cm³ |
| Melting Point | 2040 | °C |
| Hardness (Knoop) | 1800–2200 | kg/mm² |
| Thermal Conductivity (300K) | 27–30 | W/m·K |
| Thermal Expansion | 5.0–5.6 × 10⁻⁶ | /K |
| Young's Modulus | 335–400 | GPa |
| Refractive Index (1.06 μm) | 1.746–1.754 | — |
| Transmission Range | 0.17–5.5 | μm |
| Dielectric Constant (1 MHz) | 9.4–11.5 | — |
| Specific Heat Capacity | 419 | J/kg·K |
| Bending Strength | 275–400 | MPa |
| Crystal Structure | Hexagonal | — |
| Max Use Temperature | >1800 | °C |
Single Crystal Quartz
Single crystal quartz (SiO₂) is synthetically grown via hydrothermal synthesis, yielding high-purity α-quartz with exceptional piezoelectric properties, high Q-factor (>1.8–3.0 million), and precise crystallographic orientation for frequency control devices. It features trigonal crystal structure, density 2.65 g/cm³, and phase transition at 573°C (α-β). Key attributes include low thermal expansion, excellent frequency-temperature stability, and high mechanical Q for resonators. Optical transmission is high in UV-visible-IR with minimal inclusions and low etch channel density. Used extensively in quartz crystal oscillators (AT, SC, BT cuts), SAW filters, sensors, pressure transducers, and optical components. Ginechip offers high-purity synthetic quartz with controlled aluminum/alkali impurities, infrared Q-value certification, and precise wafering in standard diameters (3–6"). Materials undergo rigorous screening for twins, inclusions, and strain. Our single crystal quartz supports demanding RF, timing, and sensor applications with superior stability and reliability. Partner with Ginechip for single crystal quartz that meets the strictest specifications in electronics and photonics manufacturing.
| Parameter | Specification | Unit |
|---|---|---|
| Density | 2.65 | g/cm³ |
| Melting Point | ~1750 (decomposes) | °C |
| α-β Transition | 573 | °C |
| Hardness (Mohs) | 7 | — |
| Thermal Conductivity | ~10.7 (|| Z) | W/m·K |
| Thermal Expansion | Low / Anisotropic | — |
| Young's Modulus | ~78–97 (orientation dep.) | GPa |
| Piezoelectric Constant d11 | 2.3 | pC/N |
| Q-Value (Synthetic) | 1.8–3.0 × 10⁶ | — |
| Infrared Absorption α (3585 cm⁻¹) | ≤0.069 | cm⁻¹ |
| Crystal System | Trigonal (32) | — |
| Lattice Constants | a=4.913, c=5.405 | Å |
| Impurities (Al, Na, etc.) | Low / Controlled | ppm |
| Applications | Oscillators / SAW / Sensors | — |